Publicaciones

• ART

Existence and collapse of Fano resonances as a function of pinning field in simple mono-mode magnetic circuits

Housni Al-Wahsh

We consider, in the frame of long-wavelength Heisenberg model, the effect of a pinning field on the spin wave band gaps and transmission spectra of a simple magnonic device. This simple device is composed of an infinite one dimensional (1D) monomode waveguide (the backbone) along which N (N’) side...

The European Physical Journal B: Condensed Matter and Complex Systems, 2010, 73, pp.527-537. ⟨10.1140/epjb/e2010-00032-7⟩. ⟨hal-00549069⟩

• ART

High-speed programming of nanowire-gated carbon-nanotube memory devices

G. Agnus, A. Filoramo, S. Lenfant, D. Vuillaume, J.P. Bourgoin, Vincent Derycke

Small, 2010, 6, pp.2659-2663. ⟨10.1002/smll.201001293⟩. ⟨hal-00548969⟩

• ART

The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors

C. Thelander, K.A. Dick, M.T. Borgström, L.E. Fröberg, P. Caroff, H.A. Nilsson, L. Samuelson

Nanotechnology, 2010, 21, pp.205703-1-9. ⟨10.1088/0957-4484/21/20/205703⟩. ⟨hal-00548956⟩

• ART

Effect of on band alignment of compressively strained Ga1-xInxNyAs1-y-zSbz/GaAs quantum well structures

A. Aissat, S. Nacer, M. Seghilani, Jean-Pierre Vilcot

Physica E: Low-dimensional Systems and Nanostructures, 2010, 43, pp.40-44. ⟨10.1016/j.physe.2010.06.016⟩. ⟨hal-00552029⟩

• ART

Optical response of resonator induced plasmon filters : nanometric diatomic structures

G.H. Cocoletzi, M.A. Palomino-Ovando, L. Dobrzynski, Bahram Djafari-Rouhani, Abdellatif Akjouj

Superlattices and Microstructures, 2010, 48, pp.380-387. ⟨10.1016/j.spmi.2010.07.011⟩. ⟨hal-00549441⟩

• ART

Electrical behaviour of lateral Al/n-GaN/Al structures

Z.J. Horvath, L. Dobos, B. Beaumont, Z. Bougrioua, B. Pecz

Applied Surface Science, 2010, 256, pp.5614-5617. ⟨10.1016/j.apsusc.2010.03.031⟩. ⟨hal-00568566⟩

• ART

A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices

T. Sadi, Jean-Luc Thobel

We present a three-dimensional (3D) semi-classical ensemble Monte Carlo model newly developed to simulate a variety of nanoelectronic devices. The characteristics of the 3D model are compared with the widely used two-dimensional (2D) models. The advantages of our model, in terms of accuracy in...

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2010, 23, pp.200-214. ⟨10.1002/jnm.735⟩. ⟨hal-00549480⟩

• ART

Electron beam nanolithography in AZnLOF 2020

E. Herth, P. Tilmant, M. Faucher, M. François, Christophe Boyaval, Francois Vaurette, Y. Deblock, Bernard Legrand, L. Buchaillot

Microelectronic Engineering, 2010, 87, pp.2057-2060. ⟨10.1016/j.mee.2009.12.079⟩. ⟨hal-00548989⟩

• COMM

Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMT

Laurent Chusseau, J. Torres, P. Nouvel, H. Marinchio, L. Varani, Jean-Francois Lampin, S. Bollaert, Yannick Roelens, D. Dolfi

OPTO, 2010, San Francisco, United States. pp.760816, ⟨10.1117/12.846874⟩. ⟨hal-02443155⟩

• ART

Ab initio calculation of the binding energy of impurities in semiconductors : application to Si nanowires

Y.M. Niquet, L. Genovese, C. Delerue, T. Deutsch

We discuss the binding energy Eb of impurities in semiconductors within density functional theory (DFT) and the GW approximation, focusing on donors in nanowires as an example. We show that DFT succeeds in the calculation of Eb from the Kohn-Sham (KS) hamiltonian of the ionized impurity, but fails...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81 (16), pp.161301(R). ⟨10.1103/PhysRevB.81.161301⟩. ⟨hal-00549021⟩