Publications

• Communication dans un congrès

Fabrication and characterization of proton-exchanged waveguide on X-cut LiNbO3

G.Y. Sia, J.H. Teng, A.J. Danner, El Hadj Dogheche, R. Yin, S.S. Ang, A.B. Chew, M.Y. Lai, A. Gokarna, A. Stolz, Didier Decoster, S.Y. Tan

IEEE Photonics Global 2008, IPGC 2008, 2008, _, Singapore. pp.1-4, ⟨10.1109/IPGC.2008.4781358⟩. ⟨hal-00800976⟩

• Communication dans un congrès

In-situ silicon integrated tuner for automated on-wafer mmW noise parameters extraction of Si HBT and MOSFET in the range 60-110 GHz

Y. Tagro, D. Gloria, S. Boret, Y. Morandini, Gilles Dambrine

72nd ARFTG Microwave Measurement Symposium, 2008, Portland, OR, United States. pp.119-122, ⟨10.1109/ARFTG.2008.4804284⟩. ⟨hal-00800955⟩

• Communication dans un congrès

Recent achievement in the GaN epitaxy on silicon and engineered substrates process transfer for MBE high volume production

A. Wilk, M. Lijadi, R. Langer, P. Bove, J. Thorpe, H. Blanck, Virginie Hoel, N. Defrance, Jean-Claude de Jaeger

Materials Research Society Fall Meeting, MRS Fall 2008, Symposium on Performance and Reliability of Semiconductor Devices, 2008, Boston, MA, United States. pp.35-42, ⟨10.1557/PROC-1108-A04-01⟩. ⟨hal-00800978⟩

• Article dans une revue

Crosstalk measurement of DOS-like switch using InP narrow deep-etched waveguides

Marie Lesecq, Maxime Beaugeois, Sophie Maricot, Jean-Pierre Vilcot

We report on the performance of an optical switch based on the use of narrow deep-etched InP waveguides. A DOS-like structure has been designed and fabricated. First characterization results are reported. They show an optical crosstalk value close to -20dB.

Optics Express, 2008, 16, pp.5181-5185. ⟨10.1364/OE.16.005181⟩. ⟨hal-00357303⟩

• Article dans une revue

Delay spread and coherence bandwidth in a reverberation chamber

O. Delangre, P. de Doncker, M. Lienard, Pierre Degauque

Electronics Letters, 2008, 44, pp.328-329. ⟨10.1049/el:20083676⟩. ⟨hal-00360046⟩

• Article dans une revue

Electromagnetic compatibility analysis of unstructured mains networks for high-speed data transmission : part 2

S. Battermann, H. Garbe, F. Silva, M. Pous, V. Beauvois, K. Vantomme, J. Catrysse, J. Newbury, Virginie Degardin, M. Liénard, Pierre Degauque, I.D. Flintoft, A.D. Papatsoris, D.W. Welsh, A.C. Marvin

IET Science Measurement and Technology, 2008, 2, pp.154-159. ⟨10.1049/iet-smt:20070056⟩. ⟨hal-00360049⟩

• Article dans une revue

Demonstration of a tunable two-frequency projected fringe pattern with acousto-optic deflectors

Samuel Dupont, Jean-Claude Kastelik

Review of Scientific Instruments, 2008, 79, pp.056101-1-3. ⟨10.1063/1.2919054⟩. ⟨hal-00360091⟩

• Article dans une revue

Modeling a surface-mounted Lamb wave emission-reception system : applications to structural health monitoring

Emmanuel Moulin, Sébastien Grondel, Jamal Assaad, Laurent Duquenne

The work described in this paper is intended to present a simple and efficient way of modeling a full Lamb wave emission and reception system. The emitter behavior and the Lamb wave generation are predicted using a two-dimensional (2D) hybrid finite element–normal mode expansion model. Then the…

Journal of the Acoustical Society of America, 2008, 124, pp.3521-3527. ⟨10.1121/1.2996337⟩. ⟨hal-00360098⟩

• Article dans une revue

193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors

Ali Soltani, Hassan Ali Barkad, Maghnia Mattalah, Brahim Benbakhti, Jean-Claude de Jaeger, Y.M. Chong, Y.S. Zou, W.J. Zhang, S.T. Lee, Ali Benmoussa, B. Giordanengo, Jean-François Hochedez

Applied Physics Letters, 2008, 92 (5), pp.053501. ⟨10.1063/1.2840178⟩. ⟨hal-00357793⟩

• Article dans une revue

Investigation on the emission wavelength of GaInNAs/GaAs strained compressive quantum wells on GaAs substrates

Abdelkader Aissat, Said Nacer, Messaoud Bensebti, Jean-Pierre Vilcot

In this paper, we study the effect of the incorporation of nitrogen in strained GaInAs quantum well structures. We evaluate the influence of nitrogen on the conduction band energy by using the band anticrossing model. The incorporation of nitrogen appears to decrease the bandgap energy and increase…

Microelectronics Journal, 2008, 39, pp.63-66. ⟨10.1016/j.mejo.2007.10.014⟩. ⟨hal-00357304⟩