Publications

• Article dans une revue

Design of low-frequency ultrasonic sensors for the analysis of the draining stage of cheese production

Georges Nassar, M.N. Sabra, Fabrice Lefebvre, Malika Toubal, Bertrand Nongaillard, Yolande Noël

This work presents a new ultrasonic system with a transmission mode in the 100-200 kHz frequency range. The system, composed of ultrasonic point sources, is used to monitor the mechanical properties of cheese during the early phases of production. First, our specialized sensor system is presented,…

Ultrasonics, 2006, 44, pp.E1045-E1050. ⟨hal-02655890⟩

• Communication dans un congrès

Intégration des réseaux de câbles dans la simulation CEM automobile en hautes fréquence

Guillaume Andrieu, L. Kone, F. Bocquet, B. Demoulin, J.P. Parmentier

2006, pp.278-280. ⟨hal-00142607⟩

• Chapitre d'ouvrage

Antennna and diversity : from narrow band to ultra wideband

Pierre Degauque

L.M. Correia. Mobile Broadland Multimedia Networks, Academic Press/Elsevier, pp.218-276, 2006. ⟨hal-00577015⟩

• Chapitre d'ouvrage

Propagation modelling and channel characterization

Pierre Degauque

L.M. Correia. Mobile Broadland Multimedia Networks, Academic Press/Elsevier, pp.119-217, 2006. ⟨hal-00577016⟩

• Communication dans un congrès

Nanopatterning of InP(001) surface using e-beam lithography to localize InAs quantum dots for single photon source application

A. Turala, P. Rojo-Romeo, P. Regreny, M. Gendry, C. Priester

2006, 2 pp. ⟨hal-00152961⟩

• Communication dans un congrès

Growth of molecular nanostructures on Si using SAMs of long-chain alkytrichlorosilanes

L. Patrone, S. Desbief, D. Goguenheim, D. Vuillaume

Trends in NanoTechnologies, TNT2006, 2006, Grenoble, France. ⟨hal-00127136⟩

• Thèse

Utilisation des technologies CMOS SOI 130 nm pour des applications en gamme de fréquences millimétriques, 130 nm SOI CMOS technology for microwaves applications

Christophe Pavageau

La technologie CMOS SOI (« Silicon On Insulator ») a déjà montré son intérêt pour les circuits numériques par rapport à la technologie CMOS sur substrat massif (« bulk »). Avec l'entrée des technologies CMOS dans l'ère des dimensions nanométriques, les transistors atteignent des…, Silicon On Insulator (SOI) CMOS technology has already shown good performances for digital applications compared to bulk CMOS technology. At nanometer-scale, SOI CMOS transistors exhibit very high cut-off frequencies, enabling the design of millimeter-wave integrated circuits and therefore the…

Micro et nanotechnologies/Microélectronique. Université des Sciences et Technologie de Lille - Lille I, 2005. Français. ⟨NNT : ⟩. ⟨tel-00011744v2⟩

• Communication dans un congrès

About the role played by the principles in the physics and mathematics by J.H. Poincaré

Raffaele Pisano

AIF Workshop Science & Teaching, 6th Dec., AIF Latina & GB Grassi Latina, Dec 2005, Latina, Italy. ⟨hal-04518908⟩

• Article dans une revue

Optimisation of the parameters of an extended defect model applied to non-amorphizing implants

E. Lampin, Fuccio Cristiano, Youness Lamrani, Damien Connétable

In this paper, we present the optimisation of the parameters of a physical model of the kinetics of extended defects and applied the model with the optimised parameters to non-amorphizing implants. The model describes the small clusters, the {113} defects and the dislocation loops. In the first…

Materials Science and Engineering: B, 2005, 124-125, pp.397-400. ⟨10.1016/j.mseb.2005.08.032⟩. ⟨hal-03599806⟩

• Article dans une revue

Planar excitation of Goubau transmission lines for THz BioMEMS

A. Treizebre, Tahsin Akalin, Bertrand Bocquet

We propose and demonstrate an original planar excitation of a single wire transmission line also known as Goubau-Line (G-Line). The excitation is based on an electromagnetic transition between a coplanar waveguide and the desired G-line in a planar configuration. We present some characteristics for…

IEEE Microwave and Wireless Components Letters, 2005, 15 (12), pp.886-888. ⟨10.1109/LMWC.2005.859976⟩. ⟨hal-00147496⟩