Publications

• Article dans une revue

PMNT films for integrated capacitors

E. Fribourg-Blanc, Eric Cattan, Denis Remiens, E. Defaÿ

Solid-State Electronics, 2003, 47, pp.1631-1635. ⟨hal-00146475⟩

• Communication dans un congrès

Microfluidics for proteomics : discrete liquids

Julien Carlier, F. Caron, J.C. Fourrier, V. Thomy, C. Druon, P. Tabourier, J.C. Camart, S. Le Gac, C. Rolando, S. Arscott

Japan-European Workshop on Chem Micro Mechatronics Systems and Biochips, 2003, Cachan, France. ⟨hal-00146400⟩

• Article dans une revue

Numerical homogenization techniques applied to piezoelectric composites

E. Lenglet, Anne-Christine Hladky, J.C. Debus

Journal of the Acoustical Society of America, 2003, 113, pp.826-833. ⟨hal-00144883⟩

• Autre publication scientifique

Imagerie et détection ultrasonores par corrélation

B. El Khaldi

2003. ⟨hal-00162743⟩

• Article dans une revue

Wave-mechanical calculations of leakage current through stacked dielectrics for nanotransistor Metal-Oxide-Semiconductor design

M. Le Roy, Eric Lheurette, O. Vanbésien, D. Lippens

Journal of Applied Physics, 2003, 93, pp.2966-2971. ⟨hal-00146086⟩

• Article dans une revue

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, J. Di Persio, Dominique Vignaud, Jean-Louis Codron

In this work, we investigate the influence of the growth temperature and the arsenic flux on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs with inverse step based InAlAs buffer layers. We show besides the temperature, how the composition modulations make the arsenic flux a critical…

Journal of Crystal Growth, 2003, 251, pp.822. ⟨10.1016/S0022-0248(02)02316-3⟩. ⟨hal-00018494⟩

• Article dans une revue

Strain determination in silicon microstructures by combined TEM/CBED, process simulation and micro-Raman spectroscopy

V. Senez, A. Armigliato, I. de Wolf, G. Carnevale, R. Balboni, S. Frabboni, A. Benedetti

Test structures consisting of shallow trench isolation (STI) structures are fabricated using advanced silicon (Si) technology. Different process parameters and geometrical features are implemented to investigate the residual mechanical stress in the structures. A technology computer aided design…

Journal of Applied Physics, 2003, 94 (9), pp.5574-5583. ⟨10.1063/1.1611287⟩. ⟨hal-00146408⟩

• Article dans une revue

Accurate modelling of large angle tilt (LATID) and pure vertical implantations : application to the simulation of n- and p-LDMOS backgates

Evelyne Lampin, Emmanuel Dubois, H. Xu, S. Bardy, F. Murray

The lateral and vertical extensions of the backgate of complementary laterally diffused metal oxide semiconductor (LDMOS) are simulated. The importance of channeling for a large-angle tilt implantation and a purely vertical (0°) implantation are studied with the atomistic simulator Crystal-TRIM.…

IEEE Transactions on Electron Devices, 2003, 50 (5), pp.1401-1404. ⟨10.1109/TED.2003.813464⟩. ⟨hal-00146392⟩

• Chapitre d'ouvrage

Integrated health monitoring system based on the selective generation and sensing of Lamb waves

Jamal Assaad, Emmanuel Moulin, Sébastien Grondel, Christophe Delebarre, C. Bruneel

REMIENS D. Recent research developments in piezoelectric materials for macro/micro systems, Research Signpost, Kerala, India, pp.199-210, 2003. ⟨hal-00132000⟩

• Communication dans un congrès

Etude physique du phénomène de claquage par avalanche dans les transistors à effet de champ

M. Elkhou, Michel Rousseau, Jean-Claude de Jaeger

2003, pp.2D-21. ⟨hal-00146663⟩