Publications

• Communication dans un congrès

[Invited] Memristive technologies for neuroinspired applications

F. Alibart

Journées Scientifiques de l'Université de Nantes, Colloque 5 : Non-Volatile Emerging Memories, 2013, Nantes, France. ⟨hal-00823437⟩

• Communication dans un congrès

Confocal Raman spectroscopy of graphene on hexagonal boron nitride

Sylvain Engels, F. Forster, A. Molina-Sanchez, A. Epping, K. Watanabe, T. Taniguchi, L. Wirtz, C. Stampfer

XXVIIth International Winterschool on Electronic Properties of Novel Materials, IWEPNM 2013, 2013, Kirchberg, Austria. ⟨hal-00903354⟩

• Autre publication scientifique

Synthèse et caractérisations de couches minces de matériaux piézoélectriques sans plomb

Sébastien Quignon

2013. ⟨hal-00903352⟩

• Article dans une revue

A proof of concept of a non-resonant near-field microwave microscope based on a high impedance reflectometer

D. Glay, A. El Fellahi, T. Lasri

International Journal of Microwave and Wireless Technologies, 2013, 5, pp.301-308. ⟨10.1017/S1759078713000536⟩. ⟨hal-00872090⟩

• Article dans une revue

Water content effect on the dielectric properties of cellular concrete material

M.D. Belrhiti, S. Bri, A. Nakheli, A. Mamouni

Advances in Microwave and Wireless Technologies, 2013, 1, pp.12-15. ⟨10.12966/awmt.07.01.2013⟩. ⟨hal-00872092⟩

• Article dans une revue

Gate length variation effect on performance of gate-first self-aligned In0.53Ga0.47As MOSFET

Mohd F. Mohd Razip Wee, Arash Dehzangi, S. Bollaert, Nicolas Wichmann, Burhanuddin Y. Majlis

A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter…

PLoS ONE, 2013, 8, e82731, 8 p. ⟨10.1371/journal.pone.0082731⟩. ⟨hal-00922403⟩

• Article dans une revue

Iterative soft-Kalman channel estimation for fast time-varying MIMO-OFDM channels

E.P. Simon, M.A. Khalighi

This letter addresses the problem of channel estimation in fast time-varying frequency selective channels. Considering orthogonal frequency division multiplexing in a multipleinput multiple-output system, we perform soft-Kalman filtering for channel estimation in conjunction with soft-interference…

IEEE Wireless Communications Letters, 2013, 2, pp.599-602. ⟨10.1109/WCL.2013.081413.130515⟩. ⟨hal-00922487⟩

• Communication dans un congrès

Benefits and validation of 4-dummies de-embedding method for characterization of SiGe HBT in G-band

M. Deng, Sylvie Lepilliet, Francois Danneville, Gilles Dambrine, D. Gloria, N. Derrier, P. Chevalier

By taking into account the transistor parasitic lumped elements originated from the contact pads and the metal interconnections including the top-down connection, an enhanced de-embedding procedure for on-wafer G-band measurements has been developed and implemented. This method relies on a…

8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC04-1, 388-391. ⟨hal-00922492⟩

• Chapitre d'ouvrage

Modeling and design of BAW resonators and filters for integration in a UMTS transmitter

Matthieu Chatras, Stéphane Bila, S. Giraud, L. Catherinot, J. Fan, Dominique Cros, M. Aubourg, A. Flament, A. Frappé, B. Stefanelli, A. Kaiser, A. Cathelin, J.B. David, A. Reinhardt, L. Leyssenne, E. Kerhervé

Marco G. Beghi. Modeling and measurement methods for acoustic waves and for acoustic microdevices, InTech, pp.323-354, 2013, 978-953-51-1189-4. ⟨10.5772/56026⟩. ⟨hal-00878455⟩

• Communication dans un congrès

Strain relaxation and thermal effects on the drain conductance in AlGaN/GaN HEMT

A. Telia, A. Bellakhdar, L. Semra, A. Soltani

In this work the effects of technological and electrical parameters of Al m Ga 1-m N/GaN High Electron Mobility Transistors (HEMT) on the output conductance "gd" was studied in the first part. In the second part, the effect on gd of thermal and self heating in the device was analyzed.…

2nd Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013, 2013, Riyadh, Saudi Arabia. 6 p., ⟨10.1109/SIECPC.2013.6550780⟩. ⟨hal-00877787⟩