Publications

• Article dans une revue

Low-temperature-grown GaAs photoconductor with high dynamic responsivity in the millimeter wave range

Emilien Peytavit, Christophe Coinon, Jean-Francois Lampin

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4, pp.104101-1-3. ⟨10.1143/APEX.4.104101⟩. ⟨hal-00639827⟩

• Article dans une revue

Poole-Frenkel assisted emissions from a barrier trap in AlGaN/GaN/Si HEMTs

H. Mosbahi, M. Gassoumi, H. Mejri, Christophe Gaquière, M.A. Zaidi, H. Maaref

Journal of Electron Devices, 2011, 11, pp.538-543. ⟨hal-00639919⟩

• Communication dans un congrès

Scanning gate transconductance microscopy and spectroscopy of a mesoscopic ring

B. Hackens, F. Martins, S. Faniel, V. Bayot, M. Pala, H. Sellier, S. Huant, L. Desplanque, X. Wallart

American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States. ⟨hal-00579035⟩

• Communication dans un congrès

Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

Marc Faucher, Yvon Cordier, Fabrice Semond, Virginie Brandli, Bertrand Grimbert, Achraf Ben Amar, Matthieu Werquin, Christophe Boyaval, Christophe Gaquière, Didier Theron, Lionel Buchaillot

The properties of a new class of electromechanical resonators based on GaN are presented. By using the two-dimensional electron gas (2-DEG) present at the AlGaN/GaN interface and the piezoelectric properties of this heterostructure, we use the R-HEMT (Resonant High Electron Mobility Transistor) as…

24th International Conference on Micro Electro Mechanical Systems, MEMS 2011, Jan 2011, Cancun, Mexico. pp.581-584, ⟨10.1109/MEMSYS.2011.5734491⟩. ⟨hal-00579046⟩

• Communication dans un congrès

Polynomial modeling of acoustic guided wave propagation in homogeneous cylinder of infinite length

L. Elmaimouni, Jean-Etienne Lefebvre, F.E. Ratolojanahary, A. Raherison, Tadeusz Gryba

2nd International Conference on Multimedia Computing and Systems, ICMCS'11, 2011, Ouarzazate, Morocco. pp.1-6, ⟨10.1109/ICMCS.2011.5945602⟩. ⟨hal-00800401⟩

• Chapitre d'ouvrage

Scanning tunneling microscopy and spectroscopy of semiconductor materials

B. Grandidier

Bhattacharya P., Fornari R., Kamimura H. Comprehensive semiconductor science and technology, Elsevier, pp.Volume 4, 262-286, 2011. ⟨hal-00591735⟩

• Autre publication scientifique

Conception et réalisation d'un front-end analogique pour un récepteur multistandard multi-mode

Christian Izquierdo

2011. ⟨hal-00591805⟩

• Communication dans un congrès

Growth of antimony-containing nanowires

Philippe Caroff, Kimberly A. Dick, C. Thelander, S.R. Plissard, X. Wallart

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591392⟩

• Article dans une revue

Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

T. Xu, J. Sulerzycki, J.P. Nys, G. Patriarche, B. Grandidier, D. Stievenard

We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of both types of NWs performed with electron microscopies reveal a marked…

Nanoscale Research Letters, 2011, 6, pp.113-1-7. ⟨10.1186/1556-276X-6-113⟩. ⟨hal-00579084⟩

• Article dans une revue

Shielded cable transfer impedance measurements high frequency range 100 MHz-1 GHz

B. Demoulin, L. Kone

IEEE Electromagnetic Compatibility Society Newsletter, 2011, 228, pp.42-50. ⟨hal-00597100⟩