Publications

• Communication dans un congrès

Laser ultrasonics and guided waves for the thickness estimation of thin layers

Fabien Lefèvre, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

The dispersion of guided waves has been probed to estimate the thickness of a thin gold layer deposited on a two inches silicon wafer. Ultrasonic waves were generated and detected in a non-destructive and non-contact way using a laser ultrasonic setup. The guided waves dispersion curves were…

10ème Congrès Français d'Acoustique, Apr 2010, Lyon, France. ⟨hal-00538344⟩

• Communication dans un congrès

ZnO contour-mode resonator

Tadeusz Gryba, Julien Carlier, Shengxiang Wang, Xingzhong Zhao, Shishang Guo, Jean-Etienne Lefebvre

This paper reports on design, fabrication and experimental testing of one port ZnO piezoelectric contour- mode MEMS resonator. This is a rectangular plate formed by ZnO layer between two electrodes platinum and aluminium. A vertical electric field is applied to a layer of ZnO and induces in plane…

10ème Congrès Français d'Acoustique, Apr 2010, Lyon, France. ⟨hal-00541390⟩

• Article dans une revue

On Principles In Sadi Carnot’s Thermodynamics (1824). Epistemological Reflections

Raffaele Pisano

Almagest, 2010, 1 (2), pp.128-179. ⟨10.1484/J.ALMA.3.16⟩. ⟨hal-04507955⟩

• Communication dans un congrès

Atomic scale dopant metrology in an individual silicon nanowire by atom probe tomography

W.H. Chen, Rodrigue Lardé, Emmanuel Cadel, T. Xu, J.P. Nys, B. Grandidier, D. Stiévenard, Philippe Pareige

In this work, the p-type silicon nanowires (SiNWs) are grown by the Chemical Vapor Deposition (CVD) method using gold as catalyst droplet, silane as precursor and diborane as dopant reactant and are analyzed at the atomic scale using the three dimensional laser assisted Atom Probe Tomography (APT…

Nanotechnology 2010 Advanced Materials, CNTs, Particles, Films and Composites - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010, Jun 2010, Anaheim, CA, United States. pp.29-32. ⟨hal-01953261⟩

• Communication dans un congrès

Design of waveguides in silicon phoxonic crystal slabs

Vincent Laude, J. C. Beugnot, Sarah Benchabane, Yan Pennec, Bahram Djafari-Rouhani, N. Papanikolaou, Alejandro Martinez

We consider the problem of designing waveguides in nanostructures presenting simultaneously phononic and photonic band gaps. We specifically opt for designs in perforated silicon membranes that can be conveniently obtained using silicon-on- insulator technology. Geometrical parameters for…

IEEE International Ultrasonics Symposium, Oct 2010, San Diego, CA, United States. pp.527-530, ⟨10.1109/ULTSYM.2010.5935703⟩. ⟨hal-00541910⟩

• Communication dans un congrès

Theoretical and experimental study of the short and long range sensing using gold nanostructures

Sabine Szunerits, O. Saison, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, E. Galopin, J. Niedziolka-Jönsson, Rabah Boukherroub

SPIE Photonics Europe, Nanophotonics III, 2010, Belgium. pp.771235-1-8, ⟨10.1117/12.854855⟩. ⟨hal-00549983⟩

• Article dans une revue

Development and characterization of a diamond-based localized surface plasmon resonance interface

Sabine Szunerits, S. Ghodbane, J. Niedziolka-Jonsson, E. Galopin, F. Klauser, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, Rabah Boukherroub, D. Steinmuller-Nethl

Journal of Physical Chemistry C, 2010, 114, pp.3346-3353. ⟨10.1021/jp908916y⟩. ⟨hal-00549055⟩

• Communication dans un congrès

Band gaps and waveguiding in photonic and phononic crystal slab

Yan Pennec

Rencontres Thématiques du GT2 du GDR Ondes : Micro, nano-structures et dispositifs de l'optique au microondes, 2010, Villeneuve d'Ascq, France. ⟨hal-00574404⟩

• Communication dans un congrès

Cristaux phononiques hypersoniques à base d'oxyde d'aluminium nanoporeux

A. Sato, Yan Pennec, Bahram Djafari-Rouhani, G. Fytas, W. Knoll, M. Steinhart

12èmes Journées de la Matière Condensée, JMC12, 2010, Troyes, France. ⟨hal-00574126⟩

• Article dans une revue

Low-temperature scanning tunneling microscopy study of self-assembled InAs quantum dots grown by droplet epitaxy

Corentin Durand, A. Peilloux, K. Suzuki, K. Kanisawa, B. Grandidier, K. Muraki

Using molecular beam epitaxy, we study self-assembled InAs quantum dots (QDs) grown on GaAs (001) substrates by lowtemperature scanning tunneling microscopy. We compare two different growth processes, the well-known Stranski-Krastanow mode and the more recently studied droplet epitaxy mode. We show…

Physics Procedia, 2010, Proceedings of the 14th International conference on Narrow Gap Semiconductors and Systems, 3 (2), pp.1299-1304. ⟨10.1016/j.phpro.2010.01.180⟩. ⟨hal-00568565⟩