Publications

• Communication dans un congrès

Electroluminescence of metamorphic Inx Al1-xAs/InxGa1-xAs HEMTs on GaAs substrate

N. Cavassilas, F. Aniel, A. Nojeh, R. Adde, M. Zaknoune, S. Bollaert, Y. Cordier, D. Theron, A. Cappy

2000, 10 pp. ⟨hal-00159003⟩

• Autre publication scientifique

Réalisation technologique de transistors à effet de champ dans les filières InP et GaN pour amplification de puissance hyperfréquence

S. Trassaert

2000. ⟨hal-00158975⟩

• Communication dans un congrès

First results of GaN MESFET's realized on (111) Si

Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, H. Lahreche, P. Gibart

10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159036⟩

• Article dans une revue

On the design of multimode ultrasonic transducers for acoustooptic correlation applications

Jean-Michel Rouvaen, Atika Rivenq, P. Logette, Philippe Goutin, F. Haine

Journal of Physics D: Applied Physics, 2000, 33, pp.3041-3052. ⟨hal-00159047⟩

• Article dans une revue

Modeling of Lamb waves generated by integrated transducers in composite plates using a coupled finite element-normal modes expansion method

Emmanuel Moulin, Jamal Assaad, Christophe Delebarre, D. Osmont

Journal of the Acoustical Society of America, 2000, 107, pp.87-94. ⟨hal-00159070⟩

• Article dans une revue

In situ deposition of sputtered PZT films: control of the growth temperature by the sputtered lead flux

G. Velu, Denis Remiens

Vacuum, 2000, 56, pp.199-204. ⟨hal-00158556⟩

• Article dans une revue

Strong isotope effects in the UV light-induced reactivation of dopants in hydrogenated or deuterated n-GaAs : Si

Jacques Chevallier, M. Barbe, M. Constant, D. Bernard-Loridant, S. Silvestre, E. Constant

Superlattices and Microstructures, 2000, 27, pp.447-452. ⟨hal-00158584⟩

• Communication dans un congrès

Optical millimeter-wave system using sub-carrier local oscillator generation

Samuel Dupont, Christophe Loyez, Jean-Pierre Vilcot, N. Haese, Didier Decoster

2000, pp.Session 3-13. ⟨hal-00158605⟩

• Article dans une revue

Formation of silicon islands on a silicon on insulator substrate upon thermal annealing

Bernard Legrand, Vincent Agache, Jean-Philippe Nys, Vincent Senez, Didier Stiévenard

Starting from silicon on insulator substrates, we show that a thermal treatment (in the 600–900 °C range) induces the creation of silicon islands. To characterize the island formation as well as the initial silicon layer thickness, we use in situ Auger electron spectroscopy analysis in an ultrahigh…

Applied Physics Letters, 2000, 76, pp.3271-3273. ⟨10.1063/1.126603⟩. ⟨hal-00158537⟩

• Article dans une revue

Design and simulation of a dual mode semiconductor laser using sampled grating DFB structure

M. Hussein-Mourad, Jean-Pierre Vilcot, Didier Decoster, D. Marcenac

IEE Proceedings. Optolectronics, 2000, 147, pp.37-42. ⟨hal-00158552⟩