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Affichage de 7091 à 7100 sur 16545

Article dans une revue

On the effect of δ-doping in self-switching diodes

Andreas Westlund, Ignacio Iñiguez-De-La-Torre, Per-Åke Nilsson, Tomas González, Javier Mateos, Paul Sangaré, Guillaume Ducournau, Christophe Gaquière, L. Desplanque, Xavier Wallart, Jan Grahn

Lowering the carrier concentration is presented as a way to considerably improve the performance of self-switching diode (SSD) detectors. A physics-based theoretical model was used to derive an expression for the responsivity of SSDs as a function of carrier concentration, mobility, and design…

Applied Physics Letters, 2014, 105 (9), 093505, 5 p. ⟨10.1063/1.4894806⟩. ⟨hal-01061584⟩

Communication dans un congrès

Semiconductors with dimensionality between zero and two

Efterpi Kalesaki, Christophe Delerue, Cristiane Morais Smith, Wouter Beugeling, Guy Allan, Daniel Vanmaekelbergh

Workshop "Designing Dirac carriers in semiconductor honeycomb superlattices", 2014, Utrecht, Netherlands. ⟨hal-01015322⟩

Article dans une revue

Dirac cones, topological edge states, and nontrivial flat bands in two-dimensional semiconductors with a honeycomb nanogeometry

Efterpi Kalesaki, Christophe Delerue, Cristiane Morais Smith, Wouter Beugeling, Guy Allan, Daniel Vanmaekelbergh

We study theoretically two-dimensional single-crystalline sheets of semiconductors that form a honeycomb lattice with a period below 10 nm. These systems could combine the usual semiconductor properties with Dirac bands. Using atomistic tight-binding calculations, we show that both the atomic…

Physical Review X, 2014, 4 (1), pp.0110101. ⟨10.1103/PhysRevX.4.011010⟩. ⟨hal-00939871⟩

Communication dans un congrès

High Efficiency Process for Industrial Manufacturing of p-Type Crystalline Silicon Solar Cells Developed in the Frame of PROTERRA Project

N. Le Quang, P. Gall, R. Monna, M. Gauthier, Davy Gérard, S. Williatte, A. Rambaud, G. Goaer, Mustapha Lemiti, B. Pelissier, D. Conte, J. Moyroud, Jean-Pierre Vilcot, M. Pawlik, Mathieu Halbwax

no abstract

29th E-PVSEC, 2014, Amsterdam, The, Netherlands. ⟨hal-01489927⟩

Communication dans un congrès

Graphene field effect transistors on SiC with T-shaped gate : homogeneity and RF performance

Mohamed Salah Khenissa, D. Mele, Mohamed Moez Belhaj, Ivy Colambo, Emiliano Pallecchi, Dominique Vignaud, Henri Happy

4th Graphene Conference, Graphene 2014, May 2014, Toulouse, France. 2 p. ⟨hal-00962375⟩

Communication dans un congrès

Simulation and comparative study of graphene field effect transistor using ISE TCAD

B. Hafsi, A. Boubaker, N. Ismail, A. Kalboussi, Dominique Vuillaume, Kamal Lmimouni

7th International Conference on Molecular Electronics, ElecMol14, 2014, Strasbourg, France. ⟨hal-01055036⟩

Communication dans un congrès

CIGSe absorber layers deposition by single target magnetron sputtering

R. Meunier, S. Fabert, M. Ricci, P.Y. Thoulon, Thomas Aviles, Jean-Pierre Vilcot, Alain Lafond, Michèle Carette, Pierre-Yves Jouan, Marie-Paule Besland

In the last decades, the deposition of CIGSe thin films by sputtering has seldom been investigated. Besides, the sputtering of a single quaternary CIGSe target would be a real advantage for industrial development. Indeed, sputtering technique exhibits a good compatibility with industrial up-scaling…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium A - Thin film chalcogenide photovoltaic materials, 2014, Lille, France. ⟨hal-00964175⟩