Publications

• Communication dans un congrès

High-speed SiGe BiCMOS technologies : 120-nm status and end-of-roadmap challenges

P. Chevalier, B. Barbalat, M. Laurens, B. Vandelle, L. Rubaldo, B. Geynet, S.P. Voinigescu, T.O. Dickson, N. Zerounian, S. Chouteau, D. Dutartre, A. Monroy, F. Aniel, Gilles Dambrine, A. Chantre

7th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2007, 2007, United States. pp.18-23, ⟨10.1109/SMIC.2007.322759⟩. ⟨hal-00284032⟩

• Communication dans un congrès

60-GHz UWB-IR transceiver with pulsed-injected locked oscillator

N. Deparis, A. Boé, Christophe Loyez, N. Rolland, P.A. Rolland

2007 European Conference on Wireless Technologies, ECWT 2007, 2007, Germany. pp.280-283, ⟨10.1109/ECWT.2007.4404001⟩. ⟨hal-00284057⟩

• Article dans une revue

Pre-processing technique for improving estimation of number of paths embedded in noisy observations

A. Nasr, A. Lienard, Pierre Degauque

Electronics Letters, 2007, 43, pp.1443-1445. ⟨10.1049/el:20072773⟩. ⟨hal-00283956⟩

• Communication dans un congrès

Monte Carlo comparison between InAlAs/InGaAS double-gate and standard HEMTs

B.G. Vasallo, T. Gonzalez, D. Pardo, J. Mateos, Nicolas Wichmann, S. Bollaert, A. Cappy

Spanish Conference on Electron Devices, 2007, Spain. pp.80-83, ⟨10.1109/SCED.2007.383958⟩. ⟨hal-00284024⟩

• Article dans une revue

New results with blind time domain equalization for OFDM system

Sid Ahmed Elahmar, Ali Djebbari, Merahi Bouziani, Jean-Michel Rouvaen

The Multicarrier Equalization by Restoration of RedundancY (MERRY) algorithm has been shown to blindly and adaptively shorten a channel to the length of the guard interval in an OFDM system. Most published works on blind Time Domain Equalization (TEQ) convergence analysis are confined to Ts-spaced…

Information Technology Journal, 2007, 6 (2), pp.207-211. ⟨10.3923/itj.2007.207.211⟩. ⟨hal-00283519⟩

• Article dans une revue

On-line tools for microscopic and macroscopic monitoring of microwave processing

S. Vaucher, P. Unifantowicz, C. Ricard, Luc Dubois, M. Kuball, J.-M. Catala-Civera, Dominique Bernard, M. Stampanoni, R. Nicula

Direct monitoring of temperature, chemistry and microstructure is required to understand microwave heating in more detail, in order to fully exploit the unique features this non-equilibrium processing method can offer. In this paper, we show first that microwave radiometry can be used to follow…

Physica B: Condensed Matter, 2007, 398 (2), pp.191-195. ⟨10.1016/j.physb.2007.04.064⟩. ⟨hal-00179746⟩

• Article dans une revue

La teoria dei baricentri di Torricelli come fondamento della statica (Torricelli's theory of barycentre as a foundation of statics)

Danilo Capecchi, Raffaele Pisano

Physis; rivista internazionale di storia della scienza, 2007, XLIV (1), pp.1-29. ⟨hal-04508032⟩

• Article dans une revue

Ionization energy of donor and acceptor impurities in semiconductor nanowires: importance of dielectric confinement

Mamadou Diarra, Yann-Michel Niquet, Christophe Delerue, Guy Allan

Calculations of the electronic states of donor and acceptor impurities in nanowires show that the ionization energy of the impurities is strongly enhanced with respect to the bulk, above all when the wires are embedded in a material with a low dielectric constant. In free-standing nanowires with…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.045301. ⟨10.1103/PhysRevB.75.045301⟩. ⟨hal-00283119⟩

• Article dans une revue

Energy transfer between semiconductor nanocrystals : validity of Förster's theory

Guy Allan, Christophe Delerue

We theoretically study the energy transfer between semiconductor nanocrystals and we calculate the rate of this process in the case of direct-gap (InAs) and indirect-gap (Si) semiconductors. The calculations are based on the tight-binding method that enables us to determine the transfer rate,…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.195311. ⟨10.1103/PhysRevB.75.195311⟩. ⟨hal-00283123⟩

• Article dans une revue

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani, A. Ben Moussa, S. Touati, Virginie Hoel, Jean-Claude de Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M. A. Djouadi, C. Dua

High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility transistor (HEMT) on different substrates (Si, Al2O3, SiC). A metallization scheme based on Ti/Al/Ni/Au was used. The ohmic contacts were obtained using an optimized rapid thermal annealing (RTA) at…

Diamond and Related Materials, 2007, 16, pp.262-266. ⟨10.1016/j.diamond.2006.06.022⟩. ⟨hal-00267124⟩