Publications

• Communication dans un congrès

A wideband LNA for wireless multistandard receiver in 130nm CMOS SOI process

B. Martineau, C. Tinella, F. Gianesello, A. Cathelin, D. Belot, Francois Danneville, A. Kaiser

2006, pp.449-452. ⟨hal-00138675⟩

• Chapitre d'ouvrage

Propagation modelling and channel characterization

Pierre Degauque

L.M. Correia. Mobile Broadland Multimedia Networks, Academic Press/Elsevier, pp.119-217, 2006. ⟨hal-00577016⟩

• Chapitre d'ouvrage

Antennna and diversity : from narrow band to ultra wideband

Pierre Degauque

L.M. Correia. Mobile Broadland Multimedia Networks, Academic Press/Elsevier, pp.218-276, 2006. ⟨hal-00577015⟩

• Article dans une revue

Investigation of traps in AlGaN/GaN HEMTs by current transient spectroscopy

M. Gassoumi, J.M. Bluet, F. Chekir, I. Dermoul, H. Maaref, G. Guillot, A. Minko, Virginie Hoel, Christophe Gaquière

Materials Science and Engineering: C, 2006, 26, pp.SI : 383-386. ⟨hal-00154931⟩

• Article dans une revue

Tunable BST capacitor loss compensation using active circuit

Mahmoud Al Ahmad, Nathalie Rolland, Paul-Alain Rolland

The compensation of the ohmic and the material dielectric losses in a barium strontium titanate (BST) capacitor using an active circuit is reported in this letter. The negative resistance (NR) circuit creates an effective conductance of -|G n | which adds to the positive conductance of the passive…

IEEE Microwave and Wireless Components Letters, 2006, 16, pp.549-551. ⟨hal-00154924⟩

• Article dans une revue

Small-signal characteristics of AlInN/GaN HEMTs

F Medjdoub, J.F. Carlin, M. Gonschorek, M.A. Py, N. Grandjean, S. Vandenbrouck, Christophe Gaquière, Jean-Claude de Jaeger, E. Kohn

Electronics Letters, 2006, 42, pp.779-780. ⟨hal-00154929⟩

• Article dans une revue

Transformation of hydrogen silsesquioxane properties with RIE plasma treatment for advanced multiple-gate MOSFETs

J. Penaud, F. Fruleux, Emmanuel Dubois

Keeping in line with Moore's law requires increasing efforts in the development of alternative electronic devices. Multiple-gate transistors are very promising in order to suppress short-channel effects and to increase the current drive. Nevertheless, the fabrication of such devices represents…

Applied Surface Science, 2006, 253 (1), pp.395-399. ⟨10.1016/j.apsusc.2006.06.021⟩. ⟨hal-00138654⟩

• Article dans une revue

Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

Xing Tang, N. Reckinger, V. Bayot, Christophe Krzeminski, Emmanuel Dubois, A. Villaret, D.C. Bensahel

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory…

IEEE Transactions on Nanotechnology, 2006, 5 (6), pp.649-656. ⟨10.1109/TNANO.2006.883481⟩. ⟨hal-00138655⟩

• Article dans une revue

An optimal high contrast e-beam lithography process for the patterning of dense fin networks

F. Fruleux, J. Penaud, Emmanuel Dubois, M. Francois, M. Muller

There are many difficulties to overcome towards the integration of 10 nm CMOS technology. One such major challenge is to keep a tight control of the leakage current of devices while increasing the current drive at a reduced supply voltage. In this context, multi-gated structures, which are used to…

Materials Science and Engineering: C, 2006, 26 (5-7), pp.893-897. ⟨10.1016/j.msec.2005.09.017⟩. ⟨hal-00138653⟩

• Communication dans un congrès

Investigation de la sismique haute résolution pour la détection des cavités salines - Partie I : Test et analyse comparative de sources sismiques

A. Kosecki, Bogdan Piwakowski, L. Driad-Lebeau, P. Safinowski

Actes des Journées AGAP Qualité-GEOFCAN Géophysique appliquée à la reconnaissance des cavités et des structures anthropiques, 2006, Besançon, France. ⟨hal-00201153⟩