Publications

• Autre publication scientifique

Utilisation des technologies CMOS SOI 130 nm pour des applications en gamme de fréquences

C. Pavageau

2005. ⟨hal-00126201⟩

• Autre publication scientifique

Réalisation et caractérisation de transistors HEMTs AlInAs/GaInAs de longueur de grille sub-50 nanomètres et de transistors sans couche tampon

I. Duszynski

2005. ⟨hal-00126203⟩

• Communication dans un congrès

Inelastic electron tunnelling in metal/alkylsilane/silicon junctions

K. Lmimouni, C. Petit, G. Salace, S. Lenfant, D. Vuillaume

ElecMol'05, 2005, Grenoble, France. ⟨hal-00125604⟩

• Communication dans un congrès

Role of interface on the direct tunneling and the inelastic tunneling behaviors in metal/alkylsilane/silicon junctions

D. Vuillaume, D. K. Aswal, David Guérin, S. Lenfant, C. Petit, G. Salace, J. V. Yakhmi

French-Russian workshop on nanosciences and nanotechnologies, 2005, Lille, France. ⟨hal-00125618⟩

• Article dans une revue

Fabrication and characterization of 1.1 GHz blade nanoelectromechanical resonator

Vincent Agache, Bernard Legrand, Dominique Collard, Lionel Buchaillot, Hiroyuki Fujita

An electromechanical resonator based on a blade geometry is proposed in this letter. This particular geometry allows self-alignment of the mechanical resonator structure to its lateral electrodes while achieving high eigenfrequencies in the GHz range. This letter reports both the fabrication…

Applied Physics Letters, 2005, 86, pp.213104-1-3. ⟨10.1063/1.1929873⟩. ⟨hal-00125633⟩

• Article dans une revue

Comparison between carried-induced optical index, loss variations and carrier lifetime in GalnAsP/InP heterostructures for 1.55 μm DOS application

Malek Zegaoui, Didier Decoster, Joseph Harari, Jean-Pierre Vilcot, F. Mollot, V. Magnin, Jean Chazelas

Experimentally carrier-induced optical index, propagation excess loss and carrier lifetime variations against injected current in n +-InP/i- InGaAsP/i-InP/p +-InP heterostructures are investigated. The heterostructures have quaternary bandgap composition of λ g = 1.18 and 1.30 urn, and they were…

Electronics Letters, 2005, 41 (10), pp.613-614. ⟨10.1049/el:20050770⟩. ⟨hal-00125658⟩

• Communication dans un congrès

Tensile stress determination in silicon nitride membrane by AFM characterization

A.S. Rollier, Bernard Legrand, D. Deresmes, M. Lagouge, D. Collard, L. Buchaillot

2005, pp.828-831. ⟨hal-00125660⟩

• Communication dans un congrès

Metamorphic growth of InAs/InAlAs heterostructures on InP(001) substrates

X. Wallart, J. Lastennet, F. Mollot

13th European Molecular Beam Epitaxy Workshop, Euro-MBE, 2005, Grindelwald, Switzerland. ⟨hal-00125392⟩

• Communication dans un congrès

A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s photoreceiver

G. Wolf, H. Happy, S. Demichel, R. Leblanc, F. Blache, R. Lefevre, Gilles Dambrine

2005, pp.27-29. ⟨hal-00125306⟩

• Communication dans un congrès

Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation

R. Rengel, J. Mateos, T. Gonzales, D. Pardo, Gilles Dambrine, Francois Danneville, M.J. Martin

2005, pp.497-502. ⟨hal-00125307⟩