Publications

• Article dans une revue

Mechanical analysis of interconnect structures using process simulation

V. Senez, T. Hoffmann, P. Le Duc, F. Murray

Journal of Applied Physics, 2003, 93, pp.6039-6049. ⟨hal-00146398⟩

• Communication dans un congrès

Résonateurs de Perot-Fabry accordables en fréquence par cristal liquide

Ronan Sauleau, Nicolas Tentillier, Bertrand Splingart, Coquet Philippe

Treizièmes Journées Nationales Micro-ondes (JNM 2003), May 2003, Lille, France. 4 p. ⟨hal-00553231⟩

• Article dans une revue

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, J. Di Persio, Dominique Vignaud, Jean-Louis Codron

In this work, we investigate the influence of the growth temperature and the arsenic flux on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs with inverse step based InAlAs buffer layers. We show besides the temperature, how the composition modulations make the arsenic flux a critical…

Journal of Crystal Growth, 2003, 251, pp.822. ⟨10.1016/S0022-0248(02)02316-3⟩. ⟨hal-00018494⟩

• Article dans une revue

Strain determination in silicon microstructures by combined TEM/CBED, process simulation and micro-Raman spectroscopy

V. Senez, A. Armigliato, I. de Wolf, G. Carnevale, R. Balboni, S. Frabboni, A. Benedetti

Test structures consisting of shallow trench isolation (STI) structures are fabricated using advanced silicon (Si) technology. Different process parameters and geometrical features are implemented to investigate the residual mechanical stress in the structures. A technology computer aided design…

Journal of Applied Physics, 2003, 94 (9), pp.5574-5583. ⟨10.1063/1.1611287⟩. ⟨hal-00146408⟩

• Article dans une revue

Accurate modelling of large angle tilt (LATID) and pure vertical implantations : application to the simulation of n- and p-LDMOS backgates

Evelyne Lampin, Emmanuel Dubois, H. Xu, S. Bardy, F. Murray

The lateral and vertical extensions of the backgate of complementary laterally diffused metal oxide semiconductor (LDMOS) are simulated. The importance of channeling for a large-angle tilt implantation and a purely vertical (0°) implantation are studied with the atomistic simulator Crystal-TRIM.…

IEEE Transactions on Electron Devices, 2003, 50 (5), pp.1401-1404. ⟨10.1109/TED.2003.813464⟩. ⟨hal-00146392⟩

• Chapitre d'ouvrage

Integrated health monitoring system based on the selective generation and sensing of Lamb waves

Jamal Assaad, Emmanuel Moulin, Sébastien Grondel, Christophe Delebarre, C. Bruneel

REMIENS D. Recent research developments in piezoelectric materials for macro/micro systems, Research Signpost, Kerala, India, pp.199-210, 2003. ⟨hal-00132000⟩

• Communication dans un congrès

Etude physique du phénomène de claquage par avalanche dans les transistors à effet de champ

M. Elkhou, Michel Rousseau, Jean-Claude de Jaeger

2003, pp.2D-21. ⟨hal-00146663⟩

• Article dans une revue

MBE growth of AlGaN/GaN HEMTs on resistive Si (111) substrate with RF small signal and power performances

Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, Virginie Hoel, A. Minko, N. Vellas, Christophe Gaquière, Jean-Claude de Jaeger, B. Dessertenne, S. Cassette, Et Al.

Journal of Crystal Growth, 2003, 251, pp.811-815. ⟨hal-00146661⟩

• Communication dans un congrès

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide

Marie-Antoinette Di Forte-Poisson, Maurice Tordjman, A. Romann, M. Magis, Raphaël Aubry, Sylvain Laurent Delage, J. Di Persio, B. Grimbert, Christophe Gaquière

Proceedings of the Fifth International Conference on Nitride Semiconductors, ICNS-5, 2003, Nara, Japan. ⟨hal-00146685⟩

• Communication dans un congrès

HEMT technology for power applications at 94 GHz and above

F Medjdoub, M. Zaknoune, X. Wallart, F. Dessenne, Jean-Claude de Jaeger, D. Theron

12th European Workshop on Heterostructure Technology, heTech 2003, 2003, San Rafael, Spain. ⟨hal-00146695⟩