Publications
Affichage de 15721 à 15730 sur 16556
Caractérisations RF, microondes et millimétriques de films supraconducteurs YbaCuO
M. Achani, Nour Eddine Bourzgui, Jean-Claude Carru, A. Dégardin, A. Kreisler
6èmes Journées de Caractérisation Micro-ondes et Matériaux (JCMM 2000), Laboratoire de Génie Electrique de Paris; Association Réseau Micro-ondes Ile de France, Mar 2000, Paris, France. ⟨hal-00250451⟩
Physics of Si nanostructures
Christophe Delerue, Guy Allan, Michel Lannoo
March Meeting of the American Physical Society, Mar 2000, Minneapolis, United States. ⟨hal-03316953⟩
Dispositifs rayonnants à 60 GHz : procédés de fabrication et applications
Ronan Sauleau, Philippe Coquet, Jacques Pinel, J.P. Daniel, T. Matsui
Sixièmes Journées de Caractérisation Micro-ondes et Matériaux, Mar 2000, Paris, France. 327-330 - 4 p. ⟨hal-00557800⟩
A 57 GHz gaussian beam antenna for wireless broadband communications
Philippe Coquet, Ronan Sauleau, Daniel Thouroude, J.P. Daniel, T. Matsui
Electronics Letters, 2000, 36 (7), 594-596 - 3 p. ⟨hal-00557658⟩
Different point mutations in the met oncogene elicit distinct biological properties, Different point mutations in the met oncogene elicit distinct biological properties.
Stefano Giordano, A. Maffe, T Williams, S. Artigiani, Philippe Gual, A. Bardelli, C. Basilico, P. Michieli, P. Comoglio, T. A. Williams
FASEB Journal, 2000, 14 (2), pp.399-406. ⟨10.1096/fasebj.14.2.399⟩. ⟨hal-04496828⟩
Dry etching for gate recessing on AlGaN/GaN HEMTs
Y. Guhel, B. Boudart, M.A. Poisson, Jean-Claude de Jaeger
10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159034⟩
Raman characterization of GaN synthetised by N implantation in GaAs substrate
B. Boudart, J.C. Pesant, Jean-Claude de Jaeger, P.A. Dhamelincourt
Journal of Raman Spectroscopy, 2000, 31, pp.615-618. ⟨hal-00158978⟩
Deep traps related effects in GaN MESFET's grown on saphire substrate
A. Chini, G. Meneghesso, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, Christophe Gaquière
10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159037⟩
GaN MESFETs for power and high temperature applications
B. Boudart, S. Trassaert, Christophe Gaquière, D. Theron, Y. Crosnier, François Huet, M.A. Poisson, I. Daumiller, E. Kohn
NearEst Miniworkshop on Advances in the Wide Bandgap Electronics and Opto-Electronics, 2000, Padova, Italy. ⟨hal-00159032⟩