Publications

• Communication dans un congrès

Deep traps related effects in GaN MESFET's grown on saphire substrate

A. Chini, G. Meneghesso, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, Christophe Gaquière

10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159037⟩

• Communication dans un congrès

Dry etching for gate recessing on AlGaN/GaN HEMTs

Y. Guhel, B. Boudart, M.A. Poisson, Jean-Claude de Jaeger

10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159034⟩

• Communication dans un congrès

GaN MESFETs for power and high temperature applications

B. Boudart, S. Trassaert, Christophe Gaquière, D. Theron, Y. Crosnier, François Huet, M.A. Poisson, I. Daumiller, E. Kohn

NearEst Miniworkshop on Advances in the Wide Bandgap Electronics and Opto-Electronics, 2000, Padova, Italy. ⟨hal-00159032⟩

• Article dans une revue

Raman characterization of GaN synthetised by N implantation in GaAs substrate

B. Boudart, J.C. Pesant, Jean-Claude de Jaeger, P.A. Dhamelincourt

Journal of Raman Spectroscopy, 2000, 31, pp.615-618. ⟨hal-00158978⟩

• Article dans une revue

An analog beam-forming circuit for ultrasound imaging using switched-current delay lines

Bruno Stefanelli, I. O'Connor, L. Quiquerez, Andreas Kaiser, D. Billet

IEEE Journal of Solid-State Circuits, 2000, 35, pp.202-211. ⟨hal-00158512⟩

• Communication dans un congrès

Acoustic wave phase conjugation in active media - Numerical simulations

A. Merlen, S. Ben-Khelil, Vladimir Preobrazhensky, Philippe Pernod

IUTAM Symposium on Diffraction and Scattering in Fluid Mechanics and Elasticity, 2000, United Kingdom. pp.133-140. ⟨hal-00250440⟩

• Article dans une revue

Atomic-scale study of GaMnAs/GaAs

B. Grandidier, J.P. Nys, C. Delerue, D. Stievenard, Y. Higo, M. Tanaka

Applied Physics Letters, 2000, 77, pp.4001-4003. ⟨hal-00158645⟩

• Article dans une revue

Method for tight-binding parametrization : application to silicon nanostructures

Yann-Michel Niquet, Christophe Delerue, Guy Allan, Michel Lannoo

We propose a method for tight-binding parametrization, designed to give accurate results in the calculation of confined edge states in semiconductor nanostructures of any size. Indeed, this improved tight-binding description accurately reproduces the bulk effective masses as well as the overall…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 62, pp.5109-5116. ⟨10.1103/PhysRevB.62.5109⟩. ⟨hal-00158664⟩

• Article dans une revue

Thermally detected optical absorption, reflectance and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy

Pierre Disseix, C. Payen, Joël Leymarie, Aime Vasson, F. Mollot

Journal of Applied Physics, 2000, 88, pp.4612-4618. ⟨hal-00158440⟩

• Article dans une revue

Sub-harmonic excitation of a planar magneto-mechanical system by means of giant magnetostrictive thin films

Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod, Henri Le Gall, Jamal Ben Youssef

In the present paper, we report the first results concerning the studies on non-linear actuation of cantilevers using giant magneto-strictive thin films in the vicinity of the spin reorientation transition (SRT). Bimorph centimetre beams (24×5 mm2) were designed using 160 μm thick glass, and 0.4 μm…

Journal of Magnetism and Magnetic Materials, 2000, 210 (1-3), pp.302-308. ⟨10.1016/S0304-8853(99)00658-7⟩. ⟨hal-00158465⟩