Publications

• Article dans une revue

In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy

Alexandre Bucamp, Christophe Coinon, Sylvie Lepilliet, David Troadec, Gilles Patriarche, M Diallo, Vanessa Avramovic, Kamel Haddadi, X. Wallart, L. Desplanque

In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact of strain relaxation and…

Nanotechnology, 2022, 33 (14), pp.145201. ⟨10.1088/1361-6528/ac45c5⟩. ⟨hal-03547003⟩

• Article dans une revue

Combined surface x-ray diffraction and density functional theory study of the germanene/Al(111)-(7×7) R19.1° structure

K. Zhang, M.C. Hanf, D. Sciacca, Romain Bernard, Yves Borensztein, A. Resta, Yves Garreau, A. Vlad, A. Coati, Isabelle Lefebvre, M. Derivaz, C. Pirri, P. Sonnet, R. Stephan, G. Prévot

Several studies have reported the possible growth of germanene on various metal surfaces. However, the exact structure of the layers formed upon evaporation at or above room temperature remains controversial. In particular, the layers obtained after Ge deposition on Al(111) have been either…

Physical Review B, 2022, 106 (4), pp.045412. ⟨10.1103/PhysRevB.106.045412⟩. ⟨hal-03742119⟩

• Communication dans un congrès

Mise en œuvre de capteurs RF-MEMS acoustiques pour l’industrie 4.0

Yannick Dusch, Cécile Ghouila-Houri, Aurélien Mazzamurro, Ghizlane Boussatour, Hatem Dahmani, Olivier Bou Matar, Vincent Maurice, Philippe Pernod, Abdelkrim Talbi

Cette étude propose la conception complète d’un système de suivi à distance des sollicitations mécaniques dans les machines électriquesafin de répondre aux problématiques de l’industrie 4.0 et de la maintenance prédictive. Elle s’appuie sur la conception, la fabrication et la caractérisation de…

16emes journées pédagogiques du CNFM, JPCNFM’2021, CNFM, Dec 2021, Saint-Malo, France. 6 p., J3eA Hors-série 1 - Actes JPCNFM’2021, Volume 21 (2022), ⟨10.1051/j3ea/20221019⟩. ⟨hal-03464507⟩

• Communication dans un congrès

Unsupervised deep learning to solve power allocation problems in cognitive relay networks

Yacine Benatia, Anne Savard, Romain Negrel, Elena Veronica Belmega

In this paper, an unsupervised deep learning approach is proposed to solve the constrained and non-convex Shannon rate maximization problem in a relay-aided cognitive radio network. This network consists of a primary and a secondary user-destination pair and a secondary full-duplex relay performing…

IEEE International Conference on Communications Workshops, ICC Workshops 2022, May 2022, Séoul, South Korea. ⟨10.1109/ICCWorkshops53468.2022.9814541⟩. ⟨hal-03534545v4⟩

• Chapitre d'ouvrage

Chapter 3. Surface modification of silicon nanowires for biosensing

Yannick Coffinier, Rabah Boukherroub

Silicon nanowires (Si NWs) are one of the most important one-dimensional semiconductors, partly due to their ready implementation in modern technology. As sensing applications using Si NWs increase, it is necessary to have well-defined chemical attachment schemes that will provide the desired…

Semiconducting Silicon Nanowires for Biomedical Applications, Elsevier, pp.25-68, 2022, A volume in Woodhead Publishing Series in Biomaterials, ISBN 978-0-12-821351-3. ⟨10.1016/B978-0-12-821351-3.00017-3⟩. ⟨hal-03663951⟩

• Article dans une revue

Substrate-Induced Dissipative and Non-Linear Effects in RF Switches: Probing Ultimate Performance Based on Laser-Machined Membrane Suspension

Arun Bhaskar, Justine Philippe, Etienne Okada, Flavie Braud, J.F. Robillard, Cédric Durand, Frédéric Gianesello, Daniel Gloria, Christophe Gaquière, Emmanuel Dubois

With the evolution of radio frequency (RF)/microwave technology, there is a demand for circuits that are able to meet highly challenging RF front end specifications. Silicon-on-insulator (SOI) technology is one of the leading platforms for upcoming wireless generation. The degradation of…

Electronics, 2022, 11 (15), pp.2333. ⟨10.3390/electronics11152333⟩. ⟨hal-03739747⟩

• Article dans une revue

Contactless Rheology of Soft Gels over a Broad Frequency Range

Zaicheng Zhang, Muhammad Arshad, Vincent Bertin, Samir Almohamad, Elie Raphaël, Thomas Salez, Abdelhamid Maali

We report contactless measurements of the viscoelastic rheological properties of soft gels. The experiments are performed using a colloidal-probe Atomic Force Microscope (AFM) in a liquid environment and in dynamic mode. The mechanical response is measured as a function of the liquid gap thickness…

Physical Review Applied, 2022, 17, pp.064045. ⟨10.1103/PhysRevApplied.17.064045⟩. ⟨hal-03562373⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 11/4]

Raffaele Pisano

2022. ⟨hal-04517903⟩

• Article dans une revue

High gain/bandwidth off-chip antenna loaded with metamaterial unit-cell impedance matching circuit for sub-terahertz near-field electronic systems

Mohammad Alibakhshikenari, Bal Virdee, Dion Mariyanayagam, Valeria Vadalà, Mohammad Naser-Moghadasi, Chan See, Iyad Dayoub, Sonia Aïssa, Patrizia Livreri, Shah Nawaz Burokur, Anna Pietrenko-Dabrowska, Francisco Falcone, Slawomir Koziel, Ernesto Limiti

An innovative off-chip antenna (OCA) is presented that exhibits high gain and efficiency performance at the terahertz (THz) band and has a wide operational bandwidth. The proposed OCA is implemented on stacked silicon layers and consists of an open circuit meandering line. It is shown that by…

Scientific Reports, 2022, 12 (1), pp.17893. ⟨10.1038/s41598-022-22828-3⟩. ⟨hal-03839058⟩

• Communication dans un congrès

Nanoprobe study of the electric field driven insulator-to-metal transition in GaMo4S8

H. Koussir, Isabelle Lefebvre, Maxime Berthe, Y. Chernukha, J. Tranchant, B. Corraze, Etienne Janod, Laurent Cario, B. Grandidier, Pascale Diener

The resistive switching observed under electric pulses in Mott materials has a high potential for micro and nanoelectronics. Here we report on the study of the resistive switching observed at the surface of single crystals of the canonical Mott semiconductor GaMo4S8. The study is made using a…

Strongly Correlated Electron Systems (SCES 2020), Sep 2021, Campinas, Brazil. Journal of Physics: Conference Series, Volume 2164, 012046, 4 p., ⟨10.1088/1742-6596/2164/1/012046⟩. ⟨hal-03753819⟩