Publications

Affichage de 3301 à 3310 sur 16278


  • Article dans une revue

Large-area femtosecond laser milling of silicon employing trench analysis

Arun Bhaskar, Justine Philippe, Flavie Braud, Etienne Okada, Vanessa Avramovic, Jean-François Robillard, Cédric Durand, Daniel Gloria, Christophe Gaquière, Emmanuel Dubois

A femtosecond laser is a powerful tool for micromachining of silicon. In this work, large-area laser ablation of crystalline silicon is comprehensively studied using a laser source of pulse width 300 fs at two wavelengths of 343 nm and 1030 nm. We develop a unique approach to gain insight into the…

Optics and Laser Technology, 2021, 138, pp.106866. ⟨10.1016/j.optlastec.2020.106866⟩. ⟨hal-03091197⟩

  • Communication dans un congrès

Alpha-stable model for interference in IoT networks

Laurent Clavier, Troels Pedersen, Ignacio Rodriguez Larrad, Malcolm Egan

The increase in connected device, linked with the evolution of IoT and cellular networks with 5G and towards 6G makes crucial the limitation of the interference impact. Devices in networks (like LoRa, SigFox and even WiFi) or in different networks are not necessarily coordinated to optimize their…

International Conference on Antenna Measurements and Applications, CAMA 2021, Nov 2021, Antibes Juan-les-Pins, France. pp.575-578, ⟨10.1109/CAMA49227.2021.9703600⟩. ⟨hal-03582453⟩

  • Chapitre d'ouvrage

19 - Optical Waves in Finite Layered Photonic Crystals

Abdellatif Akjouj, El Houssaine El Boudouti, L. Dobrzynski, Bahram Djafari-Rouhani

We investigated the propagation of electromagnetic waves in a finite photonic crystal bounded by a substrate and vacuum, and separated from them by a buffer layer and a cap layer. In this realistic geometry, we show the existence of different kinds of localized and resonant modes whose behaviors…

Photonics, Part Three: Photonic Materials, Elsevier, pp.529-568, 2021, 978-0-12-819388-4. ⟨10.1016/B978-0-12-819388-4.00030-7⟩. ⟨hal-03360008⟩

  • Article dans une revue

New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor

Flavien Cozette, Bilal Hassan, Christophe Rodriguez, Eric Frayssinet, Rémi Comyn, François Lecourt, Nicolas Defrance, Nathalie Labat, François Boone, Ali Soltani, Abdelatif Jaouad, Yvon Cordier, Hassan Maher

This paper reports on the fabrication of an enhancement-mode AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistor with a new barrier epi-layer design based on double Al 0.2 Ga 0.8 N barrier layers separated by a thin GaN layer. Normally-off transistors are achieved with good…

Semiconductor Science and Technology, 2021, 36 (3), pp.034002. ⟨10.1088/1361-6641/abd489⟩. ⟨hal-03341284⟩

  • Communication dans un congrès

20 Gbit/s 306 GHz link enabled by Yagi-Uda antenna

Guillaume Ducournau, Fabio Pavanello, Aritrio Bandyopadhyay, Cybelle Belem-Gonçalves, Frédéric Gianesello, Cyril Luxey, Emilien Peytavit, Jean-Francois Lampin, Malek Zegaoui, Mohammed Zaknoune

We report on the use of a Yagi-Uda antenna on polymer substrate used in a 306 GHz-20 Gbit/s real-time data link for indoor applications. The Yagi-Uda antenna is described and the validation of the THz link is obtained in amplitude modulation mode and using QAM-16 signals (32 Gbit/s).

2021 URSI GASS Conference, Session D08: Integrated Terahertz Electronic and Photonic Devices and Systems (Part 2), Aug 2021, Rome, Italy. pp.939-942. ⟨hal-03413356⟩

  • Article dans une revue

Piezoresistance in defect-engineered silicon

Heng Li, Abel Thayil, Chris Lew, Marcel Filoche, Brett Johnson, Jeff Mccallum, S. Arscott, Alistair C. H. Rowe

The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias. Above a punch-through voltage (Vt) corresponding to the onset of a space-charge-limited hole current…

Physical Review Applied, 2021, 15 (1), 014046, 9 p. ⟨10.1103/PhysRevApplied.15.014046⟩. ⟨hal-03003310⟩

  • Article dans une revue

Mm-wave through-load element for on-wafer measurement applications

Marc Margalef-Rovira, Olivier Occello, Abdelhalim Saadi, Vanessa Avramovic, Sylvie Lepilliet, Loïc Vincent, Manuel J. Barragan, Emmanuel Pistono, Sylvain Bourdel, Christophe Gaquière, Philippe Ferrari

This paper presents an innovative Through-Load element aimed at characterization applications at mm-wave frequencies. The proposed structure can behave as a Through connection or as a 50-Ω load depending on a DC control voltage. Among other potential applications, this system can be used to…

IEEE Transactions on Circuits and Systems I: Regular Papers, 2021, 68 (8), pp.3170-3183. ⟨10.1109/TCSI.2021.3072097⟩. ⟨hal-03202213⟩