Publications

• Article dans une revue

Intra-band gap in Lamb modes propagating in a periodic solid structure

J. Pierre, M. Renier, Bernard Bonello, Anne-Christine Hladky

Journal of Physics D: Applied Physics, 2012, 45, pp.185305-1-5. ⟨10.1088/0022-3727/45/18/185305⟩. ⟨hal-00786888⟩

• Article dans une revue

Combinatorial approaches to understanding polytypism in III-V nanowires

J. Johansson, J. Bolinsson, M. Ek, P. Caroff, K.A. Dick

ACS Nano, 2012, 6, pp.6142-6149. ⟨10.1021/nn301477x⟩. ⟨hal-00786988⟩

• Article dans une revue

A memristive nanoparticle/organic hybrid synapstor for neuroinspired computing

F. Alibart, S. Pleutin, O. Bichler, C. Gamrat, T. Serrano-Gotarredona, B. Linares-Barranco, D. Vuillaume

A large effort is devoted to the research of new computing paradigms associated to innovative nanotechnologies that should complement and/or propose alternative solutions to the classical Von Neumann/CMOS association. Among various propositions, Spiking Neural Network (SNN) seems a valid candidate…

Advanced Functional Materials, 2012, 22, pp.609-616. ⟨10.1002/adfm.201101935⟩. ⟨hal-00787366⟩

• Article dans une revue

In-line dynamic acoustic behavior of a viscoelastic complex media : dough application

Georges Nassar, Bertrand Nongaillard, J. Cheio

Open Acoustics Journal, 2012, 5, pp.39-45. ⟨10.2174/1874837601205010039⟩. ⟨hal-00788343⟩

• Article dans une revue

Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4 by CDLTS

M. Gassoumi, B. Grimbert, Christophe Gaquière, H. Maaref

Semiconductors, 2012, 46, pp.382-385. ⟨10.1134/S1063782612030104⟩. ⟨hal-00788194⟩

• Article dans une revue

Mechanism of ohmic Cr/Ni/Au contact formation on p-GaN

L. Magdenko, G. Patriarche, David Troadec, O. Mauguin, E. Morvan, M.A. Di Forte-Poisson, K. Pantzas, A. Ougazzaden, A. Martinez, A. Ramdane

Journal of Vacuum Science and Technology, 2012, 30, pp.022205-1-5. ⟨10.1116/1.3688486⟩. ⟨hal-00788195⟩

• Article dans une revue

[Review] Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

F. Berthet, Y. Guhel, H. Gualous, B. Boudart, J.L. Trolet, M. Piccione, V. Sbrugnera, B. Grimbert, Christophe Gaquière

Solid-State Electronics, 2012, 72, pp.15-21. ⟨10.1016/j.sse.2011.12.002⟩. ⟨hal-00788193⟩

• Article dans une revue

Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires

Y.M. Niquet, C. Delerue, D. Rideau, Brice Videau

Phonon-limited mobilities of electrons and holes in Si nanowires (NWs) with 〈001〉, 〈110〉, and 〈111〉 orientations are calculated in a fully atomistic framework for diameters up to 10 nm. Electron-phonon scattering rates are computed with an sp3d5s* tight-binding model for electrons and a valence-…

• Article dans une revue

Large signal microwave performances of high-k metal gate 28 nm CMOS technology

R. Ouhachi, A. Pottrain, D. Ducatteau, Etienne Okada, D. Gloria, Christophe Gaquière

Electronics Letters, 2012, 48, pp.1627-1629. ⟨10.1049/el.2012.3443⟩. ⟨hal-00788176⟩

• Communication dans un congrès

The multi-port technology for microwave sensing applications

Kamel Haddadi, T. Lasri

60th IEEE MTT-S International Microwave Symposium, IMS 2012, 2012, Montréal, Canada. pp.1-3, ⟨10.1109/MWSYM.2012.6258266⟩. ⟨hal-00802597⟩