Publications

• Article dans une revue

Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics

J. Mehta, Idriss Abid, Reda Elwaradi, Yvon Cordier, F Medjdoub

AlxGa1-xN heterojunction FETs (HFETs) have been an eye catcher for high voltage power electronics with its potential to outperform the predecessors by virtue of high critical breakdown field of the material, which can be tuned by varying Al mole-fraction. In this work, we demonstrate Al0.23Ga0.77N…

e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2023, 5, pp.100263. ⟨10.1016/j.prime.2023.100263⟩. ⟨hal-04194891⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 12/3]

Raffaele Pisano

2023. ⟨hal-04510936⟩

• Article dans une revue

Topological vortex mode for flexural waves in pillared plates

Zhihui Wen, Julio Andrés Iglesias Martínez, Yabin Jin, Yan Li, Bahram Djafari-Rouhani, Daniel Torrent, Jean-Louis Raynaud, Abdelkrim Khelif

Localized topological modes with high robustness to various perturbations are receiving increasing attention. Recently, zero-order topological vortex modes have been designed in phononic structures, in analogy with zero-energy fermionic states modulated by Jackiw-Rossi binding mechanism. Such…

Materials & Design, 2023, 233, pp.112209. ⟨10.1016/j.matdes.2023.112209⟩. ⟨hal-04188368⟩

• Article dans une revue

Memristor-Based Cryogenic Programmable DC Sources for Scalable In Situ Quantum-Dot Control

Pierre-Antoine Mouny, Yann Beilliard, Sébastien Graveline, Marc-Antoine Roux, Abdelouadoud El Mesoudy, Raphaël Dawant, Pierre Gliech, Serge Ecoffey, F. Alibart, Michel Pioro-Ladrière, Dominique Drouin

Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward scalable quantum computers. Thus, we propose a scalable memristor-based programmable dc…

IEEE Transactions on Electron Devices, 2023, 70 (4), pp.1989-1995. ⟨10.1109/TED.2023.3244133⟩. ⟨hal-04053335⟩

• Communication dans un congrès

Statistical mechanics of fracture phenomena and brittle-to-ductile transitions

Andrea Cannizzo, G. Florio, G. Puglisi, Stefano Giordano

The fracture behavior of brittle and ductile materials can be strongly influenced by thermal fluctua-tions, especially in micro- and nano-devices as well as in rubberlike and biological materials. However,temperature effects, in particular on the brittle thermo-activated fracture and on the brittle…

26emes Rencontres du non-linéaire, RNL 2023, Mar 2023, Paris, France. ⟨hal-03969496⟩

• Article dans une revue

Millimetric waves communications for Railways

Marion Berbineau, Nicholas Attwood, François Gallée, Patrice Pajusco, Qianrui Li, Hervé Bonneville, Semah Mabrouki, Iyad Dayoub, D. Seetharamdoo

Transportation Research Procedia, 2023, 72, pp.1248-1255. ⟨10.1016/j.trpro.2023.11.584⟩. ⟨hal-04434496⟩

• Chapitre d'ouvrage

Chapter 9 - Modeling of power ultrasonic transducers

Bertrand Dubus, Charles Croënne, Pascal Mosbah

Ultrasonic systems are usually comprised of three elements: a generator providing the electrical energy, an electromechanical transducer converting electrical energy into mechanical vibratory energy, and a propagation medium, fluid or solid, in which acoustic energy is radiated. These devices…

EDS Juan A. Gallego-Juárez; Karl F. Graff; Margaret Lucas. Power Ultrasonics (Second Edition) Applications of High-Intensity Ultrasound, Woodhead Publishing Series in Electronic and Optical Materials, Elsevier, pp.147-159, 2023, ISBN 978-0-12-820254-8. ⟨10.1016/B978-0-12-820254-8.00034-8⟩. ⟨hal-04132344⟩

• Article dans une revue

Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices

Thomas Bordignon, Blandine Duriez, Nicolas Guitard, Romain Duru, Clément Pribat, Jérôme Richy, Shay Reboh, Siddhartha Dhar, Frédéric Monsieur, Thibaud Fache, Zdenek Chalupa, Jean-Michel Hartmann, Pascal Chevalier, Yannick Roelens, Francois Danneville, Sébastien Crémer

A new method to induce tensile stress in a PDSOI NMOS device for RF applications is proposed, which is based on relaxing a SiGe layer built underneath silicon. By means of TCAD simulations, we demonstrate that stress transfer from SiGe to Si occurs by means of at least two different mechanisms:…

Solid-State Electronics, 2023, 210, pp.108787. ⟨10.1016/j.sse.2023.108787⟩. ⟨hal-04253696⟩

• Article dans une revue

Enhanced Near-Infrared Photoresponse for Efficient Organic Solar Cells Using Hybrid Plasmonic Nanostructures

Yanglin Zhao, Yiran Luo, Shiwei Wu, Chi Wang, Najat Ahmidayi, Gaëtan Lévêque, Xavier Portier, Tao Xu

Nonfullerene organic solar cells (OSCs) have recently made remarkable progress as one of the most promising next-generation photovoltaic technologies. Still, it is highly desirable to enhance the light harvesting for the sake of photoactive layer with a limited thickness. In this work, we developed…

Physica E: Low-dimensional Systems and Nanostructures, 2023, 146, pp.115534. ⟨10.1016/j.physe.2022.115534⟩. ⟨hal-03683597⟩

• Communication dans un congrès

Récepteur Wake-up radio basé sur des réseaux de neurones à impulsions pour la détection de séquence

Guillaume Marthe, Claire Goursaud, Laurent Clavier

La consommation énergétique est un point critique dans le domaine de l'Internet des Objets. La Wake-Up Radio permet de laisser le plus possible les noeuds en mode veille et de les réveiller seulement si besoin. Malheureusement, les wakeup radios actuels utilisent des microcontroleurs toujours…

CoRes 2023 - 8èmes Rencontres Francophones sur la Conception de protocoles, l'évaluation de performances et l'expérimentation de Réseaux de communication, May 2023, Cargese, France. pp.1-4. ⟨hal-04090633⟩