Publications
Affichage de 11961 à 11970 sur 16474
Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies
M. Mattalah, A. Telia, A. Soltani, Jean-Claude de Jaeger, P. Thevenin, A. Bath, B. Akkal, H. Abid
Thin Solid Films, 2008, 516, pp.4122-4127. ⟨10.1016/j.tsf.2007.10.009⟩. ⟨hal-00357796⟩
Molecular dynamics simulation of the recrystallization of disordered Si layers
E. Lampin, Christophe Krzeminski
Workshop SiMaDes-II, Atomic scale simulations and experimental studies of disordered systems, 2008, Grenoble, France. ⟨hal-00361542⟩
Electromagnetic compatibility analysis of unstructured mains networks for high-speed data transmission : part 1
S. Battermann, H. Garbe, F. Silva, M. Pous, V. Beauvois, K. Vantomme, J. Catrysse, J. Newbury, Virginie Degardin, M. Liénard, Pierre Degauque, I.D. Flintoft, A.D. Papatsoris, D.W. Welsh, A.C. Marvin
IET Science Measurement & Technology, 2008, 2, pp.146-153. ⟨10.1049/iet-smt:20070055⟩. ⟨hal-00360048⟩
Comparative Sb and As segregation at the InP on GaAsSb interface
X. Wallart, S. Godey, Y. Douvry, L. Desplanque
Applied Physics Letters, 2008, 93, pp.123119-1-3. ⟨10.1063/1.2991299⟩. ⟨hal-00356947⟩
Molecular-scale electronics
D. Vuillaume
Comptes Rendus. Physique, 2008, 9, pp.78-94. ⟨10.1016/j.crhy.2007.10.014⟩. ⟨hal-00357286⟩
Passive photonic components using InP optical wire technology
Marie Lesecq, Sophie Maricot, Jean-Pierre Vilcot, Maxime Beaugeois
IET Optoelectronics, 2008, 2, pp.69-75. ⟨10.1049/iet-opt:20060104⟩. ⟨hal-00357302⟩
Self-assembly of the 3-aminopropyltrimethoxysilane multilayers on Si and hysteretic current-voltage characteristics
A.K. Chauhan, D.K. Aswal, S.P. Koiry, S.K. Gupta, J.V. Yakhmi, C. Sürgers, David Guérin, S. Lenfant, D. Vuillaume
Applied physics. A, Materials science & processing, 2008, 90, pp.581-589. ⟨10.1007/s00339-007-4336-7⟩. ⟨hal-00357287⟩
Microstubs resonators integrated to bent Y-branch optical waveguide
Yan Pennec, Maxime Beaugeois, Bahram Djafari-Rouhani, R. Sainidou, Abdellatif Akjouj, Jerome O. Vasseur, L. Dobrzynski, El Houssaine El Boudouti, Jean-Pierre Vilcot, Mohamed Bouazaoui, J.P. Vigneron
Photonics and Nanostructures - Fundamentals and Applications, 2008, 6, pp.26-31. ⟨10.1016/j.photonics.2008.01.002⟩. ⟨hal-00357784⟩
Band-edge photoluminescence and reflectivity of nonpolar (11-20) and semipolar (11-22) GaN formed by epitaxial lateral overgrowth on sapphire
T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennegues, B. Vinter, M. Leroux
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.075308-1-10. ⟨10.1103/PhysRevB.77.075308⟩. ⟨hal-00356987⟩