Publications

• Article dans une revue

Low-pressure organometallic vapor phase epitaxy of coherent InGaAsP/InP and InGaAsP/InAsP multilayers on InP(001)

S. Guillon, R. Y.-F. Yip, P. Desjardins, M. Chicoine, Z. Bougrioua, M. Beaudoin, A. Aït-Ouali, R. Masut

Journal of Vacuum Science & Technology A, 1998, 16 (2), pp.781-785. ⟨10.1116/1.581521⟩. ⟨hal-02906468⟩

• Article dans une revue

Hot-carrier injections in SiO2

Dominique Vuillaume, Alain Bravaix, D Goguenheim

We review the hot-carrier injection phenomena in gate-oxide and the related degradation in silicon MOSFETs. We discuss the basic degradation mechanisms and the nature of the created defects by carrier injections through the gate-oxide. Emphasis is put on the discussion of dynamic hot-carrier…

Microelectronics Reliability, 1998, Microelectronics Reliability, 38 (1), pp.7-22. ⟨10.1016/S0026-2714(97)00179-0⟩. ⟨hal-03674471⟩

• Article dans une revue

Giant electronic stop bands in one-dimensional comblike structures

Jerome O. Vasseur, Abdellatif Akjouj, L. Dobrzynski, Bahram Djafari-Rouhani, J. Vasseur, M. Kushwaha

EPL - Europhysics Letters, 1998, 41 (3), pp.321-326. ⟨10.1209/epl/i1998-00150-y⟩. ⟨hal-03301311⟩

• Article dans une revue

Sol-gel derived thin films on GaAs

S. Arscott, N Smith, R Kurchania, S Milne, R Miles

Semiconductor Science and Technology, 1998, 13 (2), pp.244-248. ⟨10.1088/0268-1242/13/2/016⟩. ⟨hal-02348109⟩

• Article dans une revue

Influence of inhomogeneous strain relaxation on the photoluminescence of II-VI nanostructures

Y.M. Niquet, Cécile Gourgon, L.S. Dang, H. Mariette, Catherine Priester, Christophe Vieu, G. Brunthaler, H. Straub, A. Darhuber, W. Faschinger, G. Bauer

Journal of Crystal Growth, 1998, 184, pp.334-338. ⟨hal-04143190⟩

• Article dans une revue

Surface spinodal decomposition in low temperature Al0.48In0.52As grown on InP(001) by molecular beam epitaxy

G. Grenet, Michel Gendry, M. Oustric, Y. Robach, L. Porte, G. Hollinger, O. Marty, M. Pitaval, C. Priester

The clustering development for lattice-matched A104s ln0.52 As grown on (001) oriented InP substrates by molecular beam epitaxy (MBE) has been investigated by ex-situ transmission electron microscopy (TEM) and in-situ scanning tunnelling microscopy (STM). For a growth temperature of 450°C, a V/III…

Applied Surface Science, 1998, 123, pp.324 - 328. ⟨10.1016/S0169-4332(97)00522-9⟩. ⟨hal-02194425⟩

• Communication dans un congrès

Study of the Ti/Al/Ni/Au ohmic contact on n-GaN for high temperature applications

S. Trassaert, B. Boudart, Xavier Wallart, Didier Theron, Y. Crosnier

8th European Workshop on Heterostructure Technology (HETECH), 1998, Cardiff, United Kingdom. ⟨hal-01654296⟩

• Article dans une revue

A new extrinsic equivalent circuit of HEMT's including noise for millimeter-wave circuit design

Gilles Dambrine, J.-M. Belquin, Francois Danneville, A. Cappy

IEEE Transactions on Microwave Theory and Techniques, 1998, 46 (9), pp.1231-1236. ⟨10.1109/22.709461⟩. ⟨hal-03612815⟩

• Article dans une revue

Noise modeling in MESFET and HEMT mixers using a uniform noisy line model

Francois Danneville, Gilles Dambrine, A. Cappy

IEEE Transactions on Electron Devices, 1998, 45 (10), pp.2207-2212. ⟨10.1109/16.725255⟩. ⟨hal-03612813⟩

• Article dans une revue

Bromine/methanol wet chemical etching of via holes for InP microwave devices

S. Trassaert, B. Boudart, Stephane Piotrowicz, Y. Crosnier

We report on the realization of via holes on InP material (for the first time to our knowledge) using bromine/methanol wet chemical etching. Typical dimension of the via holes is about 80 μμm in diameter. A specific layout has been accomplished to obtain the via hole equivalent circuit.…

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 1998, 16, pp.561-564. ⟨10.1116/1.589863⟩. ⟨hal-01644706⟩