Publications

• Article dans une revue

Study of the fundamental Lamb modes interaction with symmetrical notches

Farouk Benmeddour, Sébastien Grondel, Jamal Assaad, Emmanuel Moulin

NDT & E International, 2008, 41, pp.1-9. ⟨10.1016/j.ndteint.2007.07.001⟩. ⟨hal-00360324⟩

• Article dans une revue

Chemical and physical characterization of LaNiO3 thin films deposited by sputtering for top and bottom electrodes in ferroelectric structure

M. Detalle, Denis Remiens

Journal of Crystal Growth, 2008, 310, pp.3596-3603. ⟨10.1016/j.jcrysgro.2008.04.053⟩. ⟨hal-00360097⟩

• Communication dans un congrès

Charge injection and electrostatics of tailored graphene sheets and ribbons probed by Electric Force Microscope

A. Mahmood, J.F. Dayen, D. Tondelier, Thierry Melin, D. Vuillaume, Erik Dujardin

International Centre for Theoretical Physics Conference, Graphene Week 2008, 2008, Trieste, Italy. ⟨hal-00376233⟩

• Communication dans un congrès

Raman spectroscopy of boron-doped silicon nanowires

M. Marczak, E. Pichonat, W. Gebicki, Thierry Melin, D. Hourlier

European Materials Research Society Fall Meeting, E-MRS Fall 2008, Symposium J : New Opportunities and Challenges in Material Research using Phonon and Vibrational Spectra, 2008, Warsaw, Poland. ⟨hal-00376240⟩

• Chapitre d'ouvrage

Electronic properties of organic monolayers and molecular devices

D. Vuillaume

Deleonibus S. Electronic device architectures for the NANO-CMOS era - From ultimate CMOS scaling to beyond CMOS devices, Pan Stanford Publishing, pp.299-331, 2008. ⟨hal-00362364⟩

• Autre publication scientifique

Elaboration et caractérisations de films ferroélectriques relaxeurs de PMN-PT : intégration sur silicium et applications MEMS

M. Detalle

2008. ⟨hal-00362347⟩

• Article dans une revue

Characterization of ultrathin SOI film and application to short channel MOSFETs

Xing Tang, N. Reckinger, G. Larrieu, Emmanuel Dubois, D. Flandre, J.P. Raskin, B. Nysten, A.M. Jonas, V. Bayot

In this study, a very dilute solution (NH4OH:H2O2:H2O 1:8:64 mixture) was employed to reduce the thickness of commercially available SOI wafers down to 3 nm. The etch rate is precisely controlled at 0.11 Å s−1 based on the self-limited etching speed of the solution. The thickness uniformity of the…

Nanotechnology, 2008, 19, pp.165703-1-7. ⟨10.1088/0957-4484/19/16/165703⟩. ⟨hal-00356972⟩

• Article dans une revue

Gold metallogeny in the Birimian craton of Burkina Faso.

Didier Béziat, M. Dubois, Pierre Debat, Serge Nikiéma, S. Salvi, Francis Tollon

Journal of African Earth Sciences, 2008, pp.215-233. ⟨hal-00326270⟩

• Article dans une revue

Structural and electrical properties of Au and Ti/Au contacts to n-type GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, B. Beaumont, Z. Bougrioua

Vacuum, 2008, 82, pp.794-798. ⟨10.1016/j.vacuum.2007.11.005⟩. ⟨hal-00356985⟩

• Article dans une revue

Multilevel modeling of the influence of surface transport peculiarities on growth, shaping, and doping of Si nanowires

A. Efremov, A. Klimovskaya, I. Prokopenko, Y. Moklyak, D. Hourlier

Physica E: Low-dimensional Systems and Nanostructures, 2008, 40, pp.2446-2453. ⟨10.1016/j.physe.2008.01.015⟩. ⟨hal-00356959⟩