Publications

• Communication dans un congrès

A localization technique for LOS and NLOS scenario

P. Stefanut, D.P. Gaillot, A. Nasr, M. Lienard, Pierre Degauque

3rd European Wireless Technology Conference, EuWiT 2010, 2010, France. pp.121-124. ⟨hal-00550033⟩

• Communication dans un congrès

Graphene growth by molecular beam epitaxy on the carbon face of SiC

E. Moreau, S. Godey, F.J. Ferrer, D. Vignaud, X. Wallart, J. Avila, M.C. Asensio, F. Bournel, J.J. Gallet

2nd International Symposium on the Science and Technology of Epitaxial Graphene, STEG2, 2010, Amelia Island, FL, United States. ⟨hal-00573660⟩

• Article dans une revue

Ab initio calculation of the binding energy of impurities in semiconductors : application to Si nanowires

Y.M. Niquet, L. Genovese, C. Delerue, T. Deutsch

We discuss the binding energy Eb of impurities in semiconductors within density functional theory (DFT) and the GW approximation, focusing on donors in nanowires as an example. We show that DFT succeeds in the calculation of Eb from the Kohn-Sham (KS) hamiltonian of the ionized impurity, but fails…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81 (16), pp.161301(R). ⟨10.1103/PhysRevB.81.161301⟩. ⟨hal-00549021⟩

• Article dans une revue

Microwave modulation of terahertz quantum cascade lasers : a transmission-line approach

Wilfried Maineult, Lu Ding, Pierre Gellie, Pascal Filloux, Carlo Sirtori, Stefano Barbieri, Tahsin Akalin, Jean-Francois Lampin, Isabelle Sagnes, Harvey E. Beere, David Ritchie

We report on microwave impedance measurements of metal-metal ridge-waveguide terahertz quantum cascade lasers. Experimental data, recorded at 4 K in the 100 MHz–55 GHz range, are well reproduced by distributed-parameter transmission-line simulations, showing that the modulation cutoff is limited by…

Applied Physics Letters, 2010, 96, pp.021108-1-3. ⟨10.1063/1.3284518⟩. ⟨hal-00548728⟩

• Article dans une revue

Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

S.R. Plissard, K.A. Dick, X. Wallart, P. Caroff

Applied Physics Letters, 2010, 96, pp.121901-1-3. ⟨10.1063/1.3367746⟩. ⟨hal-00548716⟩

• Article dans une revue

Graphene growth by molecular beam epitaxy on the carbon-face of SiC

E. Moreau, S. Godey, F.J. Ferrer, D. Vignaud, X. Wallart, J. Avila, M.C. Asensio, F. Bournel, J.J. Gallet

Graphene layers have been grown by molecular beam epitaxy (MBE) on the (0001¯) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC…

Applied Physics Letters, 2010, 97 (24), pp.241907. ⟨10.1063/1.3526720⟩. ⟨hal-00548720⟩

• Communication dans un congrès

Coating metallic foams and structured reactors by VOx/TiO2 oxidation catalyst : application of RPECVD

A. Essakhi, A. Lofberg, P. Supiot, B. Mutel, S. Paul, V. Le Courtois, E. Bordes-Richard

10th International Symposium on Scientific Bases for the Preparation of Heterogeneous Catalysts, 2010, Belgium. pp.17-24, ⟨10.1016/S0167-2991(10)75003-5⟩. ⟨hal-00568965⟩

• Communication dans un congrès

Simulation de dépôt/infiltration chimique basée sur des images 3D : approche locale

W. Ros, G.L. Vignoles, C. Germain, P. Supiot

MATERIAUX 2010, Conférence pluridisciplinaire sur les matériaux, 2010, France. pp.1-4. ⟨hal-00573234⟩

• Communication dans un congrès

Pulse shaping with width randomisation for IR-UWB signal

K. Kouakou, Laurent Clavier, D. Issa, P.A. Rolland

3rd European Wireless Technology Conference, EuWiT 2010, 2010, France. pp.157-160. ⟨hal-00549930⟩

• Article dans une revue

Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier

J. Kuzmik, C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, J.F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, Y. Douvry, Christophe Gaquière, Jean-Claude de Jaeger, K. Cico, K. Frölich, J. Skriniarova, J. Kovacs, G. Strasser, D. Pogany, E. Gornik

IEEE Transactions on Electron Devices, 2010, 57, pp.2144-2154. ⟨10.1109/TED.2010.2055292⟩. ⟨hal-00549465⟩