Publications

• Communication dans un congrès

DC and RF cryogenic behaviour of InAs/AlSb HEMTs

G. Moschetti, P.A. Nilsson, L. Desplanque, X. Wallart, H. Rodilla, J. Mateos, J. Grahn

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, 2010, Japan. pp.321-324, ⟨10.1109/ICIPRM.2010.5516313⟩. ⟨hal-00549956⟩

• Autre publication scientifique

Etude des potentialités des composants à base de nitrure de gallium pour des applications mélangeurs à large bande de fréquence

Nicolas Thouvenin

2010. ⟨hal-00572717⟩

• Autre publication scientifique

Modélisation des structures nano-plasmoniques et photoniques. Applications aux phénomènes de filtrage et à la conception de capteurs bioplasmoniques

Adnane Noual

2010. ⟨hal-00572698⟩

• Communication dans un congrès

G-band low noise amplifier and oscillator for synthetic aperture applications

G. Desruelles, N. Rolland, P. Rolland

40th European Microwave Conference, EuMC 2010, 2010, France. pp.525-528. ⟨hal-00549933⟩

• Autre publication scientifique

Contribution à la conception et la réalisation de microscopes champ proche en bandes de fréquences micro-ondes et millimétriques. Application à l'évaluation non destructive

Ming Ming Wang

2010. ⟨hal-00572736⟩

• Autre publication scientifique

Génération par impulsions laser ultracourtes d'ondes acoustiques hautes fréquences par des nanostructures

Pierre-Adrien Mante

2010. ⟨hal-00572701⟩

• Autre publication scientifique

Evaluation des performances en localisation d'un radar ultra large bande millimétrique pour l'automobile

Nizar Obeid

2010. ⟨hal-00572680⟩

• Communication dans un congrès

Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

Aurélien Olivier, Nicolas Wichmann, Jiongjong Mo, Albert M.D. Noudeviwa, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, François Martin, O. Desplats, Jérôme Saint-Martin, Minghua Shi, Y. Wang, M-P Chauvat, P. Ruterana, Hassan Maher

In this paper, a 200 nm n-channel inversion-type self-aligned In 0.53 Ga 0.47 As MOSFET with a Al 2 O 3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and…

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩. ⟨hal-00549921⟩

• Communication dans un congrès

A compact coplanar waveguide metamaterial-inspired line and its use in tunable narrow bandpass filters

Alejandro Borja, Jorge Carbonell, Vicente Boria, Angel Belenguer, Didier Lippens

In this paper, novel cells, arrays, and reconfigurable metamaterial-inspired coplanar waveguide lines are studied. The novelty stems from the control of the so-called electric and magnetic plasma frequencies by properly designing the loading elements. In particular, wide shunt wires permit one to…

40th European Microwave Conference, EuMC 2010, Sep 2010, Paris, France. pp.922-925, ⟨10.23919/EUMC.2010.5616941⟩. ⟨hal-00549943⟩

• Article dans une revue

A novel design of a multiband microstrip antenna for the 3G cellular phones applications

M. Ben Ahmed, M. Bouhorma, F. El Ouaai, A. Mamouni, A.A. Boudhir

International Journal of Information and Communication Technologies, 2010, 3, pp.1-7. ⟨hal-00591736⟩