Publications
Affichage de 16221 à 16230 sur 16429
Theoretical descriptions of porous silicon
Christophe Delerue, Michel Lannoo, Guy Allan, Évelyne Martin
E-MRS Strasbourg, 1994, Strasbourg, France. ⟨hal-03316848⟩
Simulation de photodétecteurs PIN pour des applications de puissance en hyperfréquences
F. Journet, Joseph Harari, G.H. Jin, O. Rabii, Jean-Pierre Vilcot, Didier Decoster, Christophe Dalle, M.R. Friscourt
5èmes Journées Nationales Microélectronique et Optoélectronique III-V, 1994, Lyon, France. ⟨hal-00005297⟩
Measurement of the magnetic field into a bird cage probe used in NMR imaging
Ahcène Hedjedj, Mustapha Nadi, Laoues Guendouz, Gérard Prieur, A. Vanoverschelde
COST 244 workshop 1994, Apr 1994, Plzen, Czech Republic. pp.20-24. ⟨hal-00459063⟩
Single Barrier Varactor for harmonic multiplication
Olivier Tanguy, Patrice Salzenstein, Patrick Mounaix, Xavier Wallart, Didier Lippens
1994. ⟨hal-00077679⟩
Millimeter wave high-power pulsed IMPATT oscillator modelling
Christophe Dalle, B. Capoen, M.R. Friscourt, B. Campoli, M. Dorel, C. Dua
24th European Microwave Conference, 1994, Cannes, France. ⟨hal-00005299⟩
Response theory of interfaces, superlattices and composite materials
Leonard Dobrzynski
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 1994, 299-300, pp.1008-1021. ⟨10.1016/0039-6028(94)90713-7⟩. ⟨hal-04070490⟩
Microscopic noise modeling and macroscopic noise models: how good a connection? [FETs]
Francois Danneville, Henri Happy, Gilles Dambrine, J.-M. Belquin, A. Cappy
Photolithography for recessed lift-off technology application to low temperature GaAs MISFET’s ohmic contacts
B. Boudart, Christophe Robert, Didier Theron, R. Westphalen
4th European Workshop on Heterostructure Technology (HETECH), 1994, Ulm, Germany. ⟨hal-01654282⟩
Temperature measurements of LT GaAs diodes
R. Westphalen, B. Boudart, Didier Theron, X. Wallart, Y. Druelle, Y. Crosnier
Materials Science and Engineering: B, 1993, 22 (1), pp.78 - 81. ⟨10.1016/0921-5107(93)90227-E⟩. ⟨hal-01647734⟩
Efficient scaling of MOSFETS in the 50 nm regime using a recessed channel
Emmanuel Dubois, Bricout Paul-Henri
International Symposium Semiconductor Device Research (ISDRS), Dec 1993, Charlottesville (Virginia), United States. ⟨hal-04248357⟩