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Chapitre d'ouvrage

Electron Beam Curing of Monomer/Liquid Crystal Blends

Mohammed Bouchakour, Yazid Derouiche, Zohra Bouberka, Christophe Beyens, Philippe Supiot, Frédéric Dubois, Farid Riahi, Ulrich Maschke

This chapter focuses on a comparison of two polymerization/crosslinking methods to produce polymer/liquid crystal (LC) systems: rapid UV-visible irradiation and high voltage accelerated electron beams (EB), with comparable exposure times. The comparison was performed in terms of some physical…

Ingo Dierking. Polymer-modified Liquid Crystals, The Royal Society of Chemistry, pp.45-60, 2019, 9781782629825. ⟨10.1039/9781788013321-00045⟩. ⟨hal-04457627⟩

Communication dans un congrès

A method to determine wide bandgap power devices packaging interconnections

Loris Pace, N. Defrance, Jean-Claude de Jaeger, Arnaud Videt, Nadir Idir

Wide Bandgap (WBG) power devices show very good characteristics for high frequency operation in power converters, leading to a better power integration by reducing size and weight of passive components. Access parasitics such as resistances and inductances related to packaging and interconnections…

23rd IEEE Workshop on Signal and Power Integrity (SPI), Jun 2019, Chambery, France. pp.1-4, ⟨10.1109/SaPIW.2019.8781641⟩. ⟨hal-03276911⟩

Article dans une revue

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

M. Rzin, B. Guillet, Laurence Méchin, P. Gamarra, C. Lacam, F Medjdoub, J.-M. Routoure

This article reports on sub-10-nm quater-nary barrier InAlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic-vapor-phase-epitaxy (MOVPE) with an in situ SiN passivation layer and an ultra-short gate length of 200 nm. Two batches of HEMTs with two SiN thicknesses (t SiN) of 14…

IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩. ⟨hal-02382779⟩

Communication dans un congrès

Six-port technology for millimeter-wave metrology

Kamel Haddadi, Christophe Loyez, Katir Ziouche

The six-port measurement technique has played a major role in vector network analysis metrology, particularly within the community of national standards laboratories. Thanks to reduced hardware resource in contrast with conventional and well-established down-mixing heterodyne technique, this paper…

6th IEEE-Antennas-and-Propagation-Society (IEEE AP-S) Topical Meeting on Antenna Measurements & Applications (CAMA), Oct 2019, Bali, Indonesia. pp.81-84, ⟨10.1109/CAMA47423.2019.8959806⟩. ⟨hal-03224646⟩

Communication dans un congrès

Energy-efficient techniques for combating the influence of reactive jamming using Non-Orthogonal Multiple Access and Distributed Antenna Systems

Joumana Farah, Jacques Akiki, Eric Pierre Simon

The aim of this work is to propose new approaches for maximizing the energy efficiency of downlink 5G mobile communication systems, in the presence of a reactive jammer. The concepts of non-orthogonal multiple access (NOMA) and distributed antenna systems (DAS) are exploited to devise joint subband…

Wireless Telecommunications Symposium (WTS 2019), Apr 2019, New York, NY, United States. ⟨10.48550/arXiv.1903.11574⟩. ⟨hal-04542881⟩

Article dans une revue

Y-shaped magnonic demultiplexer using induced transparency resonances

Abdelkader Mouadili, El Houssaine El Boudouti, Abdellatif Akjouj, Housni Al-Wahsh, Bahram Djafari-Rouhani, L. Dobrzynski

We give an analytical demonstration of the possibility to realize a simple magnonic demultiplexer based on induced transparency resonances. The demultiplexer consists on an Y-shaped waveguide with an input line and two output lines. Each line contains two grafted stubs at a given position far from…

AIP Advances, 2019, 9 (3), pp.035011. ⟨10.1063/1.5080350⟩. ⟨hal-03143601⟩

Article dans une revue

Optimization and Comparison between the efficiency of GaNAsSb and GaInNAs single solar cells deposed on GaAs

Wafa Bellil, Abdelkader Aissat, Jean-Pierre Vilcot

In this work we study and optimize the single solar cell efficiency of GaNxAs1-x-ySby and Ga1-xInxNyAs1-y deposed on GaAs. The solar cells are simulated, in the aim to find the best concentration of nitrogen and antimony for GaNxAs1-x-ySby, and indium and nitrogen for Ga1-xInxNyAs1-y which gives us…

Procedia Computer Science, 2019, Procedia Computer Science, 151, pp.1028-1033. ⟨10.1016/j.procs.2019.04.145⟩. ⟨hal-02409552⟩

Article dans une revue

High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation

Moujahed Gassoumi, Abdelhamid Helali, Malek Gassoumi, Christophe Gaquière, Hassen Maaref

AlGaN/GaN high electron mobility transistors (HEMTs) on Silicon substrates grown by molecular beam epitaxy have been investigated using small-signal microwave measurements, to see performance Radio-frequency of components. Passivation of HEMT devices SiO2/SiN a different pretreatment is used to…

Silicon, 2019, 11 (1), pp.557-562. ⟨10.1007/s12633-018-9767-6⟩. ⟨hal-03148960⟩

Communication dans un congrès

Enlarging the Frontiers of Research in the IR/mm Range Using Synchrotron Radiation

J-B. Brubach, B. Langerome, M. Verseils, F. Capitani, T. Souske, Jean-Francois Lampin, S. Eliet, O. Pirali, M. A. Martin-Drumel, Francis Hindle, Gaël Mouret, C. Evain, C Szwaj, E. Roussel, S. Bielawski, T. Timusk, Pascale Roy

Optical probes are among the most important techniques for characterizing new physical states induced by changes of temperature and/or pressure. In link with its high brightness and wide spectral coverage, infrared synchrotron radiation is ideally suited for such studies when the quantity of…

44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. pp.1-2, ⟨10.1109/IRMMW-THz.2019.8873937⟩. ⟨hal-04295283⟩

Article dans une revue

3D Patterning of Si by Contact Etching With Nanoporous Metals

Stéphane Bastide, Encarnacion Torralba, Mathieu Halbwax, Sylvain Le Gall, Elias Mpogui, Christine Cachet-Vivier, Vincent Magnin, Joseph Harari, Dmitri Yarekha, Jean-Pierre Vilcot

Nanoporous gold and platinum electrodes are used to pattern n-type silicon by contact etching at the macroscopic scale. This type of electrode has the advantage of forming nanocontacts between silicon, the metal and the electrolyte as in classical metal assisted chemical etching while ensuring…

Frontiers in Chemistry, 2019, 7, pp.256. ⟨10.3389/fchem.2019.00256⟩. ⟨hal-02409484⟩