Publications

• Article dans une revue

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

J.F. Millithaler, I. Iniguez-De-La-Torre, A. Iniguez-De-La-Torre, T. Gonz Alez, P. Sangaré, Guillaume Ducournau, Christophe Gaquière, J. Mateos

In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric shape, socalled self-switching diodes, are presented. A particular geometry for the nanodiode is proposed, referred as V-shape, where the width of the channel is intentionally increased as approaching the anode.…

Applied Physics Letters, 2014, 104, 073509, 4 p. ⟨10.1063/1.4866166⟩. ⟨hal-00951554⟩

• Article dans une revue

On the effect of δ-doping in self-switching diodes

Andreas Westlund, Ignacio Iñiguez-De-La-Torre, Per-Åke Nilsson, Tomas González, Javier Mateos, Paul Sangaré, Guillaume Ducournau, Christophe Gaquière, L. Desplanque, Xavier Wallart, Jan Grahn

Lowering the carrier concentration is presented as a way to considerably improve the performance of self-switching diode (SSD) detectors. A physics-based theoretical model was used to derive an expression for the responsivity of SSDs as a function of carrier concentration, mobility, and design…

Applied Physics Letters, 2014, 105 (9), 093505, 5 p. ⟨10.1063/1.4894806⟩. ⟨hal-01061584⟩

• Article dans une revue

Effect of polarization switching cycles on the dielectric response and Rayleigh constant in Pb0.4Sr0.6TiO3 thin films

Kui Li, Xianlin Dong, Denis R Émiens, Tao Li, Ying Chen, Genshui Wang

Pb0.4Sr0.6TiO3 thin films with good fatigue endurance were crystallized at low temperature compatible with the current semiconductor technology. The effect of polarization switching cycles on the ferroelectric properties, dielectric response, and Rayleigh constant in thin films were systematically…

Journal of Applied Physics, 2014, 115 (6), pp.064102. ⟨10.1063/1.4864761⟩. ⟨hal-00947581⟩

• Article dans une revue

Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range

Ali Soltani, Arnaud Stolz, Joël Charrier, Maghnia Mattalah, Jean-Claude Gerbedoen, Hassan Ali Barkad, Vincent Mortet, Michel Rousseau, Nour Eddine Bourzgui, Ali Benmoussa, Jean-Claude de Jaeger

Optical waveguiding properties of a thick wurtzite aluminum nitride highly [002]-textured hetero-epitaxial film on (001) basal plane of sapphire substrate are studied. The physical properties of the film are determined by X-ray diffraction, atomic force microscopy, microRaman, and photocurrent…

Journal of Applied Physics, 2014, 115 (16), pp.163515. ⟨10.1063/1.4873236⟩. ⟨hal-00987345⟩

• Communication dans un congrès

Synthesis and electrical characterisations of a low work function cesium oxide coating for high efficiency thermionic energy converter

François Morini, J.F. Robillard, Stéphane Monfray, I.D. Baikie, Thomas Skotnicki, Emmanuel Dubois

One main challenge associated with solid-state thermoelectric materials is to combine electron-crystal electrical conductivity and phonon-glass thermal properties that are difficult to conciliate. A markedly different principle of thermoelectric conversion is based on the micro-thermionic generator…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium BB - Materials by design for energy applications through theory and experiment, 2014, Lille, France. ⟨hal-00966136⟩

• Article dans une revue

Terahertz time-domain spectroscopy of absorbing materials and of metamaterials

Jean-Louis Coutaz, M. Bernier, Frédéric Garet, S. Joly, Y. Miyake, H. Minamide, Eric Lheurette, Didier Lippens

This paper gives a review of recent works we performed in view of characterizing natural materials and metamaterials by terahertz time-domain spectroscopy. We address materials that exhibit a low transmittance in given narrow spectral bands or over the whole experimental spectral window. We give…

Terahertz Science and Technology, 2014, 7, pp.53-69. ⟨10.11906/TST.053-069.2014.06.05⟩. ⟨hal-01020491⟩

• Communication dans un congrès

200 GHz coherent wireless link using photonics-based emission

Guillaume Ducournau, Y. Yoshimizu, S. Hisatake, F. Pavanello, Emilien Peytavit, Mohammed Zaknoune, T. Nagatsuma, Jean-Francois Lampin

We investigated a coherent THz link at 200 GHz, with variable data rate up to 11 Gbit/s, featuring the combination of a quasi-optic UTC-PD emitter and a high sensitivity electronic receiver. This coherent link relies on an optical frequency comb generator at emission to produce an optical beat note…

39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Sep 2014, Tucson, United States. ⟨10.1109/IRMMW-THz.2014.6956001⟩. ⟨hal-03286172⟩

• Communication dans un congrès

Fabrication of integrated micrometer platform for thermoelectric measurements

Maciej Haras, V. Lacatena, François Morini, J.F. Robillard, S. Monfray, T. Skotnicki, Emmanuel Dubois

60th Annual IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, United States. paper 8.5, 8.5.1-8.5.4, ⟨10.1109/IEDM.2014.7047012⟩. ⟨hal-03325009⟩

• Article dans une revue

Extension of the crosstalk cancellation method in ultrasonic transducer arrays from the harmonic regime to the transient one

Abdelmajid Bybi, Sébastien Grondel, Jamal Assaad, Anne-Christine Hladky

This paper describes a procedure to extend the crosstalk correction method presented in a previous paper [A. Bybi, S. Grondel, J. Assaad, A.–C. Hladky-Hennion, M. Rguiti, Reducing crosstalk in array structures by controlling the excitation voltage of individual elements: a feasibility study,…

Ultrasonics, 2014, 54 (2), pp.720-724. ⟨10.1016/j.ultras.2013.09.007⟩. ⟨hal-00903764⟩

• Article dans une revue

A study on effect of wafer bow in wafer-level BCB cap transfer packaging

Seonho Seok, Janggil Kim

This paper investigates the effects of wafer bow of Si carrier wafer to achieve high-yield BCB cap transfer in wafer-scale packaging. BCB caps are built-up on Si carrier wafer and then they are bonded and transferred to a target wafer. The height of BCB cap is 25 lm and the thickness of Si carrier…

Microsystem Technologies, 2014, 20, pp.215-219. ⟨10.1007/s00542-013-1780-5⟩. ⟨hal-00939051⟩