Publications

• Article dans une revue

Effect of residual stress on energy storage property in PbZrO3 antiferroelectric thin films with different orientations

J. Ge, Denis Remiens, J. Costecalde, Y. Chen, X.L. Dong, G.S. Wang

The effect of residual stress on energy storage property was investigated for a series of PbZrO3 thin films on SrTiO3 and Si substrates. Compressive or tensile residual stress influences the critical electric field EA for the ferroelectric-to-antiferroelectric phase transition, thus for films with…

Applied Physics Letters, 2013, 103 (16), pp.162903. ⟨10.1063/1.4825336⟩. ⟨hal-00877658⟩

• Communication dans un congrès

Conducting organic polymers modified by incorporation of semiconductor (POC/SM) - Synthesis and electrochemical characterization of composite materials

Belkacem Nessark, Serdar Abaci, Farid Habelhames, Leila Lamiri, Kamal Lmimouni

This study consists of the analysis of the electrochemical and electronic properties, polyaniline for their use as electrode materials in electrochemical and electronic applications. The polymerization of the monomer was carried out on platinum (Pt) or indium tin oxide (ITO). The study was carried…

International Conference on Renewable Energy and Power Quality, ICREPQ'13, 2013, Bilbao, Spain. session P4, paper 499, 1-5, ⟨10.24084/repqj11.499⟩. ⟨hal-00811881⟩

• Article dans une revue

Ultrafast optical technique for measuring the electrical dependence of the elasticity of piezoelectric thin film : demonstration on AlN

Arnaud Devos, P. Emery, E. Defay, N. Ben Hassine, G. Parat

We present a technique based on ultrafast acoustics which permits us to measure the electrical dependence of the elastic properties of a thin piezoelectric layer. Ultrafast acoustics offers a unique way of measuring elastic properties of thin-layer in a non-destructive way using ultrashort optical…

Review of Scientific Instruments, 2013, 84, pp.015007-1-4. ⟨10.1063/1.4788936⟩. ⟨hal-00796410⟩

• Article dans une revue

Integrating multiple resistive memory devices on a single carbon nanotube

David Brunel, Costin Anghel, Do-Yoon Kim, Arianna Filoramo, Vincent Derycke, Saïd Tahir, Stéphane Lenfant, Takis Kontos, Dominique Vuillaume, Vincent Jourdain

Nano-objects would be of great interest for the development of new types of electronic circuits if one could combine their nanometer scale with original functionalities beyond the conventional transistor action. However, the associated circuit architectures will have to handle the increasing…

Advanced Functional Materials, 2013, 23 (45), pp.5631-5637. ⟨10.1002/adfm.201300775⟩. ⟨hal-00913582⟩

• Communication dans un congrès

Influence de l'Au nanométrique sur la conductivité des nanofils en Si

M.S. Moldovan, I. Florea, D. Hourlier, O. Ersen

13ème Colloque de la Société Française des Microscopies, SFMu 2013, 2013, Nantes, France. ⟨hal-00878504⟩

• Autre publication scientifique

Modelling Of Supramolecular Network Deposited On A Semiconductor Surface

Guillaume Copie, Christophe Krzeminski, Fabrizio Cleri, Younes Makoudi, B. Grandidier, Frédéric Cherioux, Frank Palmino

We investigated the self-assembly mechanisms and electronic properties of highly- symmetric organic molecules based on a substituted 1,2,5-tri(4-phenyl)benzene core[1], deposited on a passivated boron-doped Si(111)-√3x√3 R30° surface, by using ab-initio calculations, empirical molecular dynamics…

2013. ⟨hal-00941972⟩

• Article dans une revue

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

F. Fromm, M.H. Oliveira, A. Molina-Sanchez, M. Hundhausen, J.M.J. Lopes, H. Riechert, L. Wirtz, T. Seyller

We report a Raman study of the so-called buffer layer with (6√3 × 6√3)R30◦ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of…

New Journal of Physics, 2013, 15, pp.043031-1-11. ⟨10.1088/1367-2630/15/4/043031⟩. ⟨hal-00823434⟩

• Article dans une revue

High quality factor mg-scale silicon mechanical resonators for 3-mode optoacoustic parametric amplifiers

F.A. Torres, P. Meng, L. Ju, C. Zhao, D.G. Blair, K.-Y. Liu, S. Chao, M. Martyniuk, Isabelle Roch-Jeune, R. Flaminio, C. Michel

Milligram-scale resonators have been shown to be suitable for the creation of 3-mode optoacoustic parametric amplifiers, based on a phenomena first predicted for advanced gravitational-wave detectors. To achieve practical optoacoustic parametric devices, high quality factor resonators are required…

Journal of Applied Physics, 2013, 114, pp.014506. ⟨10.1063/1.4812731⟩. ⟨in2p3-00859697⟩

• Communication dans un congrès

Application of magnetoelastic materials as active elements in ultrasonic WPC-tomography of liquids flows

Y.V. Pylnov, Philippe Pernod, V.L. Preobrazhensky, Y.I. Kutlubaeva, Nikolay Smagin, P.N. Shirkovsky

International Conference on Functional Materials, ICFM 2013, 2013, Partenit, Crimea, Ukraine. ⟨hal-00878514⟩

• Communication dans un congrès

Flexible broadband perfect metamaterial absorber operating at millimeter waves

J.P. Hao, C. Mismer, Guillaume Ducournau, L. Burgnies, Eric Lheurette, D. Lippens

Colloque National Métamatériaux, CNM 2013, 2013, Orsay, France. ⟨hal-00878495⟩