Publications

• Communication dans un congrès

Study of carbon nanotubes using continuous-wave terahertz spectroscopy

S. Puthukodan, H.L. Rivera, Guillaume Ducournau, Jean-Francois Lampin

SPIE Photonics West, OPTO 2013, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI, 2013, San Francisco, CA, United States. ⟨hal-00878924⟩

• Article dans une revue

Modeling of high contrast partially electroded resonators by means of a polynomial approach

P.M. Rabotovao, F.E. Ratolojanahary, Jean-Etienne Lefebvre, A. Raherison, L. Elmaimouni, Tadeusz Gryba, J.G. Yu

Journal of Applied Physics, 2013, 114 (12), pp.124502. ⟨10.1063/1.4821768⟩. ⟨hal-00877665⟩

• Article dans une revue

In situ high-temperature characterization of AlN-based surface acoustic wave devices

T. Aubert, Jochen Bardong, Ouarda Legrani, O. Elmazria, M. Badreddine Assouar, Gudrun Bruckner, Abdelkrim Talbi

We report on in situ electrical measurements of surface acoustic wave delay lines based on AlN/sapphire structure and iridium interdigital transducers between 20 °C and 1050 °C under vacuum conditions. The devices show a great potential for temperature sensing applications. Burnout is only observed…

Journal of Applied Physics, 2013, 114 (1), pp.014505. ⟨10.1063/1.4812565⟩. ⟨hal-00871910⟩

• Communication dans un congrès

Technology of inkjet printing applied for flexible electronics

Wei Wei, Mohamed Moez Belhaj, Henri Happy

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, Jun 2013, Grenoble, France. 3 p. ⟨hal-00957772⟩

• Article dans une revue

Record combination of power-gain cut-off frequency and three-terminal breakdown voltage for GaN-on-silicon devices

F Medjdoub, B. Grimbert, D. Ducatteau, N. Rolland

Japanese Journal of Applied Physics, part 2 : Letters, 2013, 6, pp.044001-1-3. ⟨10.7567/APEX.6.044001⟩. ⟨hal-00809852⟩

• Communication dans un congrès

Non-contact air-coupled velocity measurements in planar samples

Qiang Liu, Bogdan Piwakowski, Zoubeir Lafhaj

Non-contact air-coupled technique has been applied to measure ultrasonic velocities in two planar samples, Plexiglas and mortar. Longitudinal waves and mode-converted shear velocities were obtained by three approaches. The obtained velocities were compared with that measured by contact method. The…

13th International Symposium on Nondestructive Characterization of Materials, NDCM-XIII, 2013, Le Mans, France. paper 15527, 7 p. ⟨hal-00971601⟩

• Communication dans un congrès

Effect of electric bias field and pressure on PMN-PT piezoelectric single crystals in Tonpilz transducers

C. Granger, Anne-Christine Hladky, J.C. Debus, T. Pastureaud, M. Doisy, M. Pham Thi

3rd Joint IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2013, Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials Workshop, PFM 2013, 2013, Prague, Czech Republic. ⟨hal-00934422⟩

• Article dans une revue

Multiple exciton generation and ultrafast exciton dynamics in HgTe colloidal quantum dots

Ali Al-Otaify, Stephen V. Kershaw, Shuchi Gupta, Andrey L. Rogach, Guy Allan, Christophe Delerue, David J. Binks

The investigation of sub-nanosecond exciton dynamics in HgTe colloidal quantum dots using ultrafast transient absorption spectroscopy is reported. The transmittance change spectrum acquired immediately after pumping is dominated by a bleach blue-shifted by ∼200–300 nm from the photoluminescent…

Physical Chemistry Chemical Physics, 2013, 15, pp.16864-16873. ⟨10.1039/C3CP52574K⟩. ⟨hal-00871970⟩

• Article dans une revue

Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT

François Lecourt, Alain Agboton, Nico Ketteniss, Hannes Behmenburg, N. Defrance, Virginie Hoel, Holger Kalisch, Andrei Vescan, Michael Heuken, Jean-Claude de Jaeger

Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm 2 /V·s, which is the highest value ever…

IEEE Electron Device Letters, 2013, 34, pp.978-980. ⟨10.1109/LED.2013.2266123⟩. ⟨hal-00872022⟩

• Article dans une revue

Improvement of the oxidation interface in an AlGaAs/AlxOy waveguide structure by using a GaAs/AlAs superlattice

J.Y. Song, S. Bouchoule, G. Patriarche, E. Galopin, A.M. Yacomotti, E. Cambril, Q.G. Kou, David Troadec, J.J. He, J.C. Harmand

The wet oxidation from the mesa sidewalls of AlGaAs/GaAs epitaxial structures is investigated in details. In addition to the intended lateral oxidation of the Al-rich buried layer, we observe a parasitic vertical oxidation of the adjacent layers of lower Al content. This vertical oxidation produces…

Physica Status Solidi A (applications and materials science), 2013, 210, pp.1171-1177. ⟨10.1002/pssa.201228770⟩. ⟨hal-00872060⟩