Publications

Affichage de 8241 à 8250 sur 16556


  • Autre publication scientifique

Structures intégrées sur InP pour la commutation optique

Djamila Cherfi

2013. ⟨hal-00915573⟩

  • Communication dans un congrès

200 GHz communication system using unipolar InAs THz rectifiers

Guillaume Ducournau, A. Westlund, P. Sangare, Christophe Gaquière, P.A. Nislon, L. Desplanque, J.L. Codron, X. Wallart, I. Iniguez de La Torre, J.F. Millithaler, T. Gonzales, J. Mateos, J. Grahn

38th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2013, 2013, Mainz, Germany. paper MO11-3, 2 p., ⟨10.1109/IRMMW-THz.2013.6665492⟩. ⟨hal-00914236⟩

  • Article dans une revue

Channel estimation for SCM-OFDM systems by modified Kalman filter

T. Peng, Y. Xiao, S.Q. Li, H.Q. Shu, E.P. Simon

Communications and Network = 通信與網路 [Tong xin yu wang lu], 2013, 5, pp.668-672. ⟨10.4236/cn.2013.53B2119⟩. ⟨hal-00877647⟩

  • Chapitre d'ouvrage

Generation of a selected Lamb mode by piezoceramic transducers : application to nondestructive testing of aeronautical structures

Farouk Benmeddour, Emmanuel Moulin, Jamal Assaad, S. Djili

Ebrahimi F. Piezoelectric materials and devices - Practice and applications, InTech, chapter 5, 93-111, 2013, ISBN 978-953-51-1045-3. ⟨10.5772/54582⟩. ⟨hal-00800665⟩

  • Communication dans un congrès

Doped semiconductor nanocrystal junctions studied by Kelvin probe and non-contact atomic force microscopy

Lukasz Borowik, Thuat Nguyen-Tran, D. Deresmes, Heinrich Diesinger, Pere Roca I Cabarrocas, Thierry Melin

Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND~10^20-10^21 cm-3) hydrogen-passivated silicon nanocrystals (NCs) in the 2-50nm size range, using non-contact atomic force microscopy coupled to Kelvin probe…

Materials Research Society Fall Meeting, MRS Fall 2013, Symposium LL : Advances in Scanning Probe Microscopy, 2013, Boston, MA, United States. ⟨hal-00944018⟩

  • Communication dans un congrès

A 285 GHz sub-harmonic injection locked oscillator in 65nm CMOS technology

J. Moron Guerra, A. Siligaris, Jean-Francois Lampin, Francois Danneville, P. Vincent

A 285 GHz Sub Harmonic Injection Locked Oscillator (SHILO) is presented using a standard 65nm CMOS process. The architecture of this oscillator is based on the differential LC tank with push-push but adapted to obtain a third harmonic oscillation. The output power is -19 dBm at 285 GHz for a dc…

61st IEEE MTT-S International Microwave Symposium, IMS 2013, 2013, Seattle, WA, United States. paper WE1F-4, 3 p., ⟨10.1109/MWSYM.2013.6697345⟩. ⟨hal-00944033⟩