Publications

• Communication dans un congrès

Graphene layers grown by RTP-CVD on nickel and their properties

H. Kim, E. Pichonat, D. Vignaud, D. Pavlidis, H. Happy

11th Expert Meeting on Evaluation and Control of Coumpound Semiconductor Materials & Technologies, EXMATEC 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801046⟩

• Communication dans un congrès

RF operation of InAs quantum hot electron transistors

H. Nguyen Van, A. N. Baranov, M. Zaknoune, R. Teissier

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801051⟩

• Communication dans un congrès

Interface engineering of PCM for improved synaptic performance in neuromorphic systems

M. Suri, O. Bichler, Q. Hubert, L. Perniola, V. Sousa, C. Jahan, D. Vuillaume, C. Gamrat, B. de Salvo

4th IEEE International Memory Workshop, IMW 2012, 2012, Milano, Italy. pp.1-4, ⟨10.1109/IMW.2012.6213674⟩. ⟨hal-00801096⟩

• Communication dans un congrès

A reconfigurable 60GHz subsampling receiver architecture with embedded channel filtering

B. Grave, A. Frappe, A. Kaiser

IEEE International Symposium on Circuits and Systems, ISCAS 2012, 2012, Seoul, South Korea. pp.1295-1298, ⟨10.1109/ISCAS.2012.6271476⟩. ⟨hal-00801103⟩

• Article dans une revue

Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

C. Thelander, P. Caroff, S.R. Plissard, K.A. Dick

Applied Physics Letters, 2012, 100, pp.232105-1-4. ⟨10.1063/1.4726037⟩. ⟨hal-00786987⟩

• Article dans une revue

Efficient physical-thermal model for thermal effects in AlGaN/GaN high electron mobility transistors

Michel Rousseau, A. Soltani, Jean-Claude de Jaeger

This letter describes the thermal behavior of AlGaN/GaN high electron mobility transistors on different substrates thanks to a fully consistent physical-thermal model. Self-heating explains the drastic reduction in the current flowing from drain to source. It is shown that, in order to keep the…

Applied Physics Letters, 2012, 101 (12), pp.122101. ⟨10.1063/1.4753815⟩. ⟨hal-00787873⟩

• Communication dans un congrès

Effects of spontaneous and piezoelectric polarization on AlInN/GaN heterostructure

L. Semra, A. Telia, M. Kaddeche, A. Soltani

1st International Conference on Engineering and Technology, ICET 2012, 2012, Cairo, Egypt. pp.1-4, ⟨10.1109/ICEngTechnol.2012.6396158⟩. ⟨hal-00801159⟩

• Article dans une revue

Power harvesting capabilities of SHM ultrasonic sensors

Christophe Delebarre, Thomas Sainthuile, Sébastien Grondel, Christophe Paget

The aim of this work is to show that classical Structural Health Monitoring ultrasonic sensors may provide some power harvesting capabilities from a wide variety of vibration sources. In other words, the authors developed an integrated piezoelectric energy harvesting sensor capable of operating a…

Smart Materials Research, 2012, 2012, pp.387638. ⟨10.1155/2012/387638⟩. ⟨hal-00790375⟩

• Article dans une revue

Experimental investigation on channel characteristics in tunnel environment for time reversal ultra wide band techniques

C. Garcia-Pardo, M. Lienard, Pierre Degauque, J.M. Molina-Garcia-Pardo, L. Juan-Llacer

Radio Science, 2012, 47, pp.RS1009-1-9. ⟨10.1029/2011RS004893⟩. ⟨hal-00788200⟩

• Article dans une revue

Influence of thermal and fast neutron irradiation on DC electrical performances of AlGaN/GaN transistors

F. Berthet, Y. Guhel, B. Boudart, H. Gualous, J.L. Trolet, M. Piccione, Christophe Gaquière

IEEE Transactions on Nuclear Science, 2012, 59, pp.2556-2561. ⟨10.1109/TNS.2012.2209894⟩. ⟨hal-00788175⟩