Publications

• Communication dans un congrès

Systèmes radiofréquences avancés pour communication inter-puces multi-gigabits à 60GHz

S. Foulon, Christophe Loyez, S. Pruvost, N. Rolland

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 274, 2E8, 1-3. ⟨hal-00597147⟩

• Article dans une revue

Germanium adsorption and initial growth on SrTiO3 (001) surface : a first principles investigation

J.J. Wang, I. Lefebvre

Journal of Physical Chemistry C, 2011, 115, pp.22893-22900. ⟨10.1021/jp205074w⟩. ⟨hal-00783408⟩

• Article dans une revue

Electrical characterization of traps in AlGaN/GaN FAT-HEMT's on silicon substrate by C-V and DLTS measurements

M. Charfeddine, M. Gassoumi, H. Mosbahi, Christophe Gaquière, M.A. Zaidi, H. Maaref

Journal of Modern Physics, 2011, 2, pp.1229-1234. ⟨10.4236/jmp.2011.210152⟩. ⟨hal-00783410⟩

• Article dans une revue

Band gap engineering in simultaneous phononic and photonic crystal slabs

Bahram Djafari-Rouhani, Yan Pennec, El Houssaine El Boudouti, Jerome O. Vasseur, Youssef El Hassouani, C. Li, Abdellatif Akjouj, Driss Bria

We discuss the simultaneous existence of phononic and photonic band gaps in two types of phononic crystals slabs, namely periodic arrays of nanoholes in a Si membrane and of Si nanodots on a SiO2 membrane. In the former geometry, we investigate in detail both the boron nitride lattice and the…

Applied physics. A, Materials science & processing, 2011, 103, pp.735-739. ⟨10.1007/s00339-010-6207-x⟩. ⟨hal-00603012⟩

• Article dans une revue

Dielectric properties at microwaves frequencies of (Ni, Ti, La, Mg)-doped Ba0.3Sr0.7TiO3 thin films deposited on high-resistivity silicon substrates

Freddy Ponchel, Denis Remiens, J. Midy, Jean-François Legier, Caroline Soyer, T. Lasri, G. Guegan

Journal of the American Ceramic Society, 2011, 94, pp.1661-1663. ⟨10.1111/j.1551-2916.2011.04546.x⟩. ⟨hal-00603030⟩

• Article dans une revue

Above 600 mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high electron mobility transistors grown on silicon

F Medjdoub, Malek Zegaoui, Nicolas Waldhoff, B. Grimbert, N. Rolland, Paul-Alain Rolland

AlN/GaN high-electron-mobility transistors (HEMTs) capped with an in-situ grown SiN have been successfully developed on 100mm Si substrates. A unique combination of maximum output current density exceeding 2A/mm and a record extrinsic transconductance above 600 mS/mm has been reached, which is well…

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (6), pp.064106-1-3. ⟨10.1143/APEX.4.064106⟩. ⟨hal-00603010⟩

• Article dans une revue

Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method

G. Astromskas, K. Storm, P. Caroff, M. Borgström, E. Lind, L.E. Wernersson

Microelectronic Engineering, 2011, 88, pp.444-447. ⟨10.1016/j.mee.2010.08.010⟩. ⟨hal-00592100⟩

• Article dans une revue

Mechanical characterization of aluminium nanofilms

Gregory Guisbiers, Etienne Herth, L. Buchaillot

The mechanical properties (Young’s modulus, hardness, wear resistance) of aluminium nanofilms on silicon substrate are studied. Size effect on these mechanical properties are exhibited. Young’s modulus, hardness and wear resistance increases when the thickness is reduced. Experimental…

Microelectronic Engineering, 2011, 88 (5), pp.844-847. ⟨10.1016/j.mee.2010.06.028⟩. ⟨hal-00579052⟩

• Article dans une revue

Design, realization and test of a 2.1 GHz ultra-low phase noise oscillator based on BAW resonator

M.D. Li, S. Seok, N. Rolland, P.A. Rolland

AEU. International Journal of Electronics and Communications, 2011, 65, pp.602-607. ⟨10.1016/j.aeue.2010.09.004⟩. ⟨hal-00591316⟩

• Article dans une revue

Vortex state in thin films of multicomponent ferroelectrics

Laurent Baudry, Anaïs Sené, Igor A. Luk'Yanchuk, Laurent Lahoche

The distribution of polarization in thin film of multicomponent weak anisotropic ferroelectric under application of an axially symmetric electric field induced by circular electrodes is studied. We demonstrate that above a certain critical field the instability towards abrupt formation of…

Thin Solid Films, 2011, 519 (17), pp.5808-5810. ⟨10.1016/j.tsf.2010.12.192⟩. ⟨hal-00603009⟩