Publications

Affichage de 9101 à 9110 sur 16120


  • Article dans une revue

X-ray combined analysis of fiber-textured and epitaxial Ba(Sr,Ti)O3 thin films deposited by radio frequency sputtering

Denis Remiens, L. Yang, Freddy Ponchel, Jean-François Legier, D. Chateigner, Gang Wang, X. Dong

Journal of Applied Physics, 2011, 109, pp.114106-1-11. ⟨10.1063/1.3592282⟩. ⟨hal-00603029⟩

  • Article dans une revue

Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

H.A. Nilsson, P. Caroff, E. Lind, M.E. Pistol, C. Thelander, L.E. Wernersson

Journal of Applied Physics, 2011, 110, pp.064510-1-4. ⟨10.1063/1.3633742⟩. ⟨hal-00639829⟩

  • Article dans une revue

Structural, ferroelectric and dielectric properties of In2O3:Sn (ITO) on PbZr0.53 Ti 0.47O3 (PZT)/Pt and annealing effect

L. Kerkache, A. Layadi, El Hadj Dogheche, Denis Remiens

Journal of Alloys and Compounds, 2011, 509, pp.6072-6076. ⟨10.1016/j.jallcom.2011.03.022⟩. ⟨hal-00591328⟩

  • Article dans une revue

Electrosynthesis and analysis of the electrochemical properties of a composite material : polyaniline + titanium oxide

S. Abaci, B. Nessark, Rabah Boukherroub, K. Lmimouni

Thin Solid Films, 2011, 519, pp.3596-3602. ⟨10.1016/j.tsf.2011.01.277⟩. ⟨hal-00579072⟩

  • Article dans une revue

Guided waves in functionally graded viscoelastic plates

J.G. Yu, F.E. Ratolojanahary, Jean-Etienne Lefebvre

Composite Structures, 2011, 93, pp.2671-2677. ⟨10.1016/j.compstruct.2011.06.009⟩. ⟨hal-00639935⟩

  • Communication dans un congrès

Study of pulse waveforms for testing in mode stirred reverberating chamber

V. Deniau, L. Kone, M. Ayad, B. Renoncourt, J. Rioult

EMC Europe 2011, 2011, York, United Kingdom. pp.778-783. ⟨hal-00800320⟩

  • Communication dans un congrès

Strain relaxation of GaSb islands on GaP and GaAs substrates for highmobility AlSb/InAs heterostructures

S. El Kazzi, L. Desplanque, X. Wallart, Y. Wang, P. Ruterana

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799994⟩

  • Communication dans un congrès

First AlN/GaN HEMTs power measurement at 18 GHz on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

AlN/GaN heterostructure is an ideal candidate to push the limits of microwave GaN-based devices owing to the maximum theoretical spontaneous and piezoelectric difference between the epitaxial AlN barrier and the underlying GaN layer. If the tricky growth conditions of this binary can be controlled…

69th Device Research Conference, DRC 2011, Jun 2011, Santa Barbara, CA, United States. pp.219-220, ⟨10.1109/DRC.2011.5994506⟩. ⟨hal-00799973⟩

  • Communication dans un congrès

Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation

Minghua Shi, J. Saint-Martin, A. Bournel, D. Querlioz, P. Dollfus, J.J. Mo, Nicolas Wichmann, L. Desplanque, X. Wallart, Francois Danneville, S. Bollaert

37th IEEE International SOI Conference, SOI 2011, 2011, Tempe, AZ, United States. pp.1-2, ⟨10.1109/SOI.2011.6081701⟩. ⟨hal-00799795⟩