Publications

• Article dans une revue

Room temperature magnetoelectric memory cell using stress-mediated magnetoelastic switching in nanostructured multilayers

Nicolas Tiercelin, Yannick Dusch, A. Klimov, S. Giordano, Vladimir Preobrazhensky, Philippe Pernod

Applied Physics Letters, 2011, 99, pp.192507-1-3. ⟨10.1063/1.3660259⟩. ⟨hal-00639833⟩

• Article dans une revue

Microwave evaluation of Pb(0.4)Sr(0.6)TiO(3) thin films prepared by magnetron sputtering on silicon : performance comparison with Ba(0.3)Sr(0.7)TiO(3) thin films

Freddy Ponchel, X. Lei, Denis Remiens, Gang Wang, X. Dong

Applied Physics Letters, 2011, 99, pp.172905-1-3. ⟨10.1063/1.3656065⟩. ⟨hal-00783535⟩

• Article dans une revue

Performance of multi-relay coded cooperative diversity in asynchronous code-division multiple-access over fading channels

A. Eid, W. Hamouda, Iyad Dayoub

IET Communications, 2011, 5, pp.683-692. ⟨10.1049/iet-com.2010.0478⟩. ⟨hal-00597103⟩

• Communication dans un congrès

Antenne microstrip alimentée par fente inversée pour l'intégration hétérogène 3D (system-in-package) en gamme millimétrique [60GHz]

T. Sarrazin, R. Crunelle, O. Lafond, Mohamed Himdi, N. Rolland

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 327, 4E7, 1-4. ⟨hal-00597140⟩

• Article dans une revue

Wurtzite-zincblende superlattices in InAs nanowires using a supply interruption method

J. Bolinsson, P. Caroff, B. Mandl, K.A. Dick

Nanotechnology, 2011, 22, pp.265606-1-10. ⟨10.1088/0957-4484/22/26/265606⟩. ⟨hal-00597079⟩

• Article dans une revue

Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel

N. Clement, K. Nishiguchi, A. Fujiwara, D. Vuillaume

An evaluation of the gate capacitance of a fieldeffect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less has been extremely difficult. Here, we report…

IEEE Transactions on Nanotechnology, 2011, 10 (5), pp.1172-1179. ⟨10.1109/TNANO.2011.2123913⟩. ⟨hal-00639857⟩

• Article dans une revue

Large array of sub-10-nm single-grain Au nanodots for use in nanotechnology

N. Clement, G. Patriarche, K. Smaali, Francois Vaurette, K. Nishiguchi, David Troadec, A. Fujiwara, D. Vuillaume

A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin SiO2 layer. These findings are based on physical…

Small, 2011, 7, pp.2607-2613. ⟨10.1002/smll.201100915⟩. ⟨hal-00639861⟩

• Article dans une revue

Contact angle hysteresis origins: investigation on super-omniphobic surfaces

Renaud Dufour, Maxime Harnois, Vincent Thomy, Rabah Boukherroub, Vincent Senez

Contact angle hysteresis of liquid droplets is investigated on sticky and flexible super-omniphobic surfaces made up of PDMS–Si3N4 microstructures. Up to now, extensive studies have been focusing on the relation between hysteresis and surface properties such as roughness or defect density. However…

Soft Matter, 2011, 7 (19), pp.9380-9387. ⟨10.1039/C1SM05832K⟩. ⟨hal-00639938⟩

• Communication dans un congrès

Dispersion of confined acoustic phonons in ultra-thin Si membranes

J. Cuffe, E. Chavez, P.O. Chapuis, E.H. El Boudouti, F. Alzina, D. Dudek, Yan Pennec, Bahram Djafari-Rouhani, A. Shchepetov, M. Prunnila, J. Ahopelto, C.M. Sotomayor Torres

The acoustic phonon dispersion curves of ~10 and ~30 nm Si membranes were measured using Brillouin Light Scattering (BLS) spectroscopy. The dispersion relations of the confined phonons were calculated from a semi-analytical model based on continuum elasticity theory. Green’s function simulations…

1st International Conference on Phononic Crystals, Metamaterials and Optomechanics, PHONONICS 2011, 2011, Santa Fe, United States. pp.218-219. ⟨hal-00800075⟩

• Communication dans un congrès

Développement d'un banc de caractérisation non linéaire dans le domaine fréquentiel pour la caractérisation et la modélisation de transistors de puissance

R. Ouhachi, A. Pottrain, T. Lacave, D. Ducatteau, P. Chevalier, D. Gloria, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 118, 2F6, 1-4. ⟨hal-00603134⟩