Publications

• Brevet

Détecteur pour ondes sub-millimétriques ou térahertz à mélangeur électronique injecté optiquement

Laurent Chusseau, Jeremie Torres, Jean-Francois Lampin, Daniel Dolfi

Unknown Region, Patent n° : 1000028. 2010. ⟨hal-01904168⟩

• Communication dans un congrès

Polarized Photoluminescence From Nonpolar (11-20) (Ga,In)N Multi-Quantum-Wells

T. Gühne, Z. Bougrioua, M. Nemoz, R. Chmielowski, Thierry Bretagnon, Bernard Gil, M. Leroux

Nonpolar (11-20) (Ga,In)N multi-quantum wells have been studied by polarized, temperature dependent photoluminescence (PL). A non monotonic temperature dependence of the difference in PL peak energies recorded for E parallel to c or E perpendicular to c, and of the polarization ratio is observed.…

PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors, Jul 2008, Rio de Janeiro, Brazil. pp.191-192, ⟨10.1063/1.3295362⟩. ⟨hal-00546363⟩

• Article dans une revue

New magnetic micro-actuator design based on PDMS elastomer and MEMS technologies for tactile display

J. Streque, Abdelkrim Talbi, Philippe Pernod, Vladimir Preobrazhensky

IEEE Transactions on Haptics (ToH), 2010, 3, pp.88-97. ⟨10.1109/TOH.2009.61⟩. ⟨hal-00548961⟩

• Article dans une revue

Coulomb energy determination of a single Si dangling bond

T.H. Nguyen, G. Mahieu, Maxime Berthe, B. Grandidier, C. Delerue, D. Stievenard, P. Ebert

Physical Review Letters, 2010, 105, pp.226404-1-4. ⟨10.1103/PhysRevLett.105.226404⟩. ⟨hal-00549059⟩

• Article dans une revue

Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires

Wenxing Zhang, Christophe Delerue, Yann-Michel Niquet, Guy Allan, Enge Wang

Using a sp3d5s∗ tight-binding model for electrons and a valence force-field model for phonons, we study the transport properties of [110]-oriented silicon nanowires including all electron-phonon interactions. Using a full resolution of the Boltzmann transport equation, the low-field mobility is…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.115319-1-7. ⟨10.1103/PhysRevB.82.115319⟩. ⟨hal-00549040⟩

• Article dans une revue

Injection-locking of terahertz quantum cascade lasers up to 35 GHz using RF amplitude modulation

P. Gellie, S. Barbieri, Jean-Francois Lampin, P. Filloux, C. Manquest, C. Sirtori, I. Sagnes, S.P. Khanna, E.H. Linfield, A.G. Davies, H. Beere, D. Ritchie

Optics Express, 2010, 18, pp.20799-20813. ⟨10.1364/OE.18.020799⟩. ⟨hal-00548733⟩

• Communication dans un congrès

Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation

Albert M.D. Noudeviwa, Yannick Roelens, Francois Danneville, Aurélien Olivier, Nicolas Wichmann, Nicolas Waldhoff, Sylvie Lepilliet, Gilles Dambrine, L. Desplanque, X. Wallart, Joseph Bellaiche, Derek Smith, Hassan Maher, S. Bollaert

We present in this paper, a study of Dc, RF and Noise characteristics of an industrial metamorphic HEMT (High Electron Mobility Transistor) operating under low voltage at cryogenic temperature. The results at 300K are compared with the obtained results at cryogenic temperature. Temperature decrease…

5th European Microwave Integrated Circuits Conference, EuMIC 2010, Sep 2010, Paris, France. pp.286-289. ⟨hal-00549927⟩

• Article dans une revue

Frequency dependent rotation and translation of nanowires in liquid environment

M. Marczak, D. Hourlier, Thierry Melin, L. Adamowicz, H. Diesinger

Applied Physics Letters, 2010, 96, pp.233502-1-3. ⟨10.1063/1.3430738⟩. ⟨hal-00549071⟩

• Article dans une revue

GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP

S. El Kazzi, L. Desplanque, Christophe Coinon, Y. Wang, P. Ruterana, X. Wallart

Applied Physics Letters, 2010, 97, pp.192111-1-3. ⟨10.1063/1.3515867⟩. ⟨hal-00548719⟩

• Article dans une revue

Doping incorporation in InAs nanowires characterized by capacitance measurements

G. Astromskas, K. Storm, O. Karlström, P. Caroff, M. Borgström, L.E. Wernersson

Journal of Applied Physics, 2010, 108, pp.054306-1-5. ⟨10.1063/1.3475356⟩. ⟨hal-00548710⟩