Publications
Affichage de 10101 à 10110 sur 16549
Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate
O. Fathallah, M. Gassoumi, B. Grimbert, Christophe Gaquière, H. Maaref
European Physical Journal: Applied Physics, 2010, 51, pp.10304-1-5. ⟨10.1051/epjap/2010085⟩. ⟨hal-00549476⟩
Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications
J. Ratajczak, A. Laszcz, A. Czerwinski, J. Katcki, F. Phillipp, P.A. van Aken, N. Reckinger, Emmanuel Dubois
Journal of Microscopy, 2010, EM 2008 ‐ XIII International Conference on Electron Microscopy, 237 (3), pp.379-383. ⟨10.1111/j.1365-2818.2009.03264.x⟩. ⟨hal-00549623⟩
Time-resolved charge detection and back-action in quantum circuits
T. Ihn, S. Gustavsson, U. Gasser, R. Leturcq, I. Shorubalko, K. Ensslin
Physica E: Low-dimensional Systems and Nanostructures, 2010, 42, pp.803-808. ⟨10.1016/j.physe.2009.11.087⟩. ⟨hal-00568568⟩
Growth and electric properties of MPB BiScO3-PbTiO3 thin films on La0.7Sr0.3MnO3-coated silicon substrates
S.A. Zhang, X.L. Dong, Y. Chen, F. Cao, Y.Y. Zhang, G.S. Wang, N. Sama, Denis Remiens
Journal of the American Ceramic Society, 2010, 93, pp.1583-1585. ⟨10.1111/j.1551-2916.2010.03630.x⟩. ⟨hal-00549506⟩
Bottom and top electrodes nature and PZT film thickness influence on electrical properties
N. Sama, Caroline Soyer, Denis Remiens, C. Verrue, R. Bouregba
Sensors and Actuators A: Physical , 2010, 158, pp.99-105. ⟨10.1016/j.sna.2009.11.032⟩. ⟨hal-00549503⟩
Interface engineering for improved light transmittance through photonic crystal flat lenses
Geoffroy Scherrer, Maxence Hofman, Wojciech Smigaj, B. Gralak, X. Melique, O. Vanbesien, D. Lippens, Colette Dumas, Benoît Cluzel, F. de Fornel
Applied Physics Letters, 2010, 97 (7), pp.071119. ⟨10.1063/1.3473760⟩. ⟨hal-00548691⟩
Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructures for high speed and low power consumption electronic devices
L. Desplanque, D. Vignaud, S. Godey, S.R. Plissard, E. Cadio, X. Wallart, P. Liu, H. Sellier
16th International Conference on Molecular Beam Epitaxy, MBE 2010, 2010, Berlin, Germany. ⟨hal-00573659⟩
Imperfection-sensitive ductility of aluminium thin films
M. Coulombier, A. Boé, C. Brugger, J.P. Raskin, T. Pardoen
Scripta Materialia, 2010, 62, pp.742-745. ⟨10.1016/j.scriptamat.2010.01.048⟩. ⟨hal-00548611⟩
A 60 GHz power amplifier with 14.5 dBm saturation power and 25% peak PAE in CMOS 65 nm SOI
A. Siligaris, Y. Hamada, C. Mounet, C. Raynaud, B. Martineau, N. Deparis, N. Rolland, M. Fukaishi, P. Vincent
IEEE Journal of Solid-State Circuits, 2010, 45, pp.1286-1294. ⟨10.1109/JSSC.2010.2049456⟩. ⟨hal-00548603⟩
Diameter dependence of the wurtzite-zinc blende transition in InAs nanowires
J. Johansson, K.A. Dick, P. Caroff, M.E. Messing, J. Bolinsson, K. Deppert, L. Samuelson
Journal of Physical Chemistry C, 2010, 114, pp.3837-3842. ⟨10.1021/jp910821e⟩. ⟨hal-00548709⟩