Publications

• Article dans une revue

Generation and detection of terahertz pulses using post-process bonding of low-temperature-grown GaAs and AlGaAs

L. Desplanque, Jean-Francois Lampin, F. Mollot

Applied Physics Letters, 2004, 84, pp.2049-2051. ⟨hal-00140716⟩

• Communication dans un congrès

Characterization of polyaniline coated PET conductive fibres

B. Kim, V. Konvar, E. Devaux, C. Dufour

Polymer Fibres 2004, 2004, Manchester, United Kingdom. ⟨hal-00140743⟩

• Communication dans un congrès

Morphology, structure and conduction properties of isolated islands of pentacene, applications in organic thin-film transistors

K. Lmimouni, T. Heim, C. Dufour, D. Vuillaume

European Materials Research Society Spring Meeting, 2004, Strasbourg, France. ⟨hal-00140742⟩

• Article dans une revue

InAlAs-InGaAs double-gate HEMTs on transferred substrate

Nicolas Wichmann, I. Duszynski, X. Wallart, S. Bollaert, A. Cappy

IEEE Electron Device Letters, 2004, 25, pp.354-356. ⟨hal-00133868⟩

• Autre publication scientifique

Etude et réalisation d'un transducteur et d'un système de transmission fibre multimode–radio à 850 nm pour applications GSM, UMTS et WiFi

C. Lethien

2004. ⟨hal-00141175⟩

• Communication dans un congrès

Millimeter ultra wide band positioning system

Michael Bocquet, Christophe Loyez, A. Benlarbi-Delai

2004, pp.265-268. ⟨hal-00142284⟩

• Communication dans un congrès

Performances of AlGaN/GaN HEMTs in planar technology

M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, Marie Germain, Jean-Claude de Jaeger, Christophe Gaquière

2004, pp.303-306. ⟨hal-00142305⟩

• Article dans une revue

Raman characterization of Mg+ ion-implanted GaN

B. Boudart, Y. Guhel, J. C. Pesant, P. Dhamelincourt, M. A. Poisson

Mg+ ions were implanted at room temperature in n-type hexagonal GaN for the device isolation purposes. The implantation dose varied from 7.5 × 1012 to 1016 ions cm−2. We performed resonance Raman spectroscopy and DC electrical measurements in order to monitor the structural and electrical changes…

Journal of Physics: Condensed Matter, 2003, 16 (2), pp.S49. ⟨10.1088/0953-8984/16/2/006⟩. ⟨hal-02936052⟩

• Thèse

Gravure par faisceau d'ions de films minces de titano-zirconate de plomp (PZT) : étude des dégradations engendrées et contribution à l'intégration aux microsystèmes, Ion beam etching of lead titanate-zirconate (PZT) thin films : study of damages induced and contribution to the integration in microsystems

Caroline Soyer

Ces travaux, relatifs à la gravure par faisceau d'ions de films minces de PZT, présentent un ensemble de résultats pouvant être scindés en deux parties. Tout d'abord, nous avons mené une étude originale dont le but est de tenter d'appréhender les mécanismes d'interactions entre…, First of all, we have carried out an original study of which the aim is to try to understand the mechanisms of interactions between an ion beam (reactive or not) and the PZT surface. We have underlined various degradations of material, as well microstructural as electrical. These damages evolve…

Electronique. Université de Valenciennes et du Hainaut-Cambrésis, 2003. Français. ⟨NNT : 2003VALE0038⟩. ⟨hal-00162746⟩

• Pré-publication, Document de travail

Dispersive charge transport along the surface of an insulating layer observed by Electrostatic Force Microscopy

J. S. Lambert, G. de Loubens, C. Guthmann, M. Saint-Jean, Thierry Melin

We report the observation in the direct space of the transport of a few thousand charges submitted to atunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observedusing the same Electrostatic Force Microscope. During the time range accessible to our…

2003. ⟨hal-00000962⟩