Publications

• Article dans une revue

Electronic structure and radial breathing mode for carbon nanotubes with ultra-high curvature

W. Plank, R. Pfeiffer, C. Scharman, L. Wirtz, M. Calvaresi, F. Zerbetto, J. Meyer, H. Kuzmany

physica status solidi (b), 2010, 247, pp.2774-2778. ⟨10.1002/pssb.201000357⟩. ⟨hal-00800832⟩

• Communication dans un congrès

Microwave power capabilities of InAlN/GaN HEMTs

Jean-Claude de Jaeger, Christophe Gaquière, Y. Douvry, N. Defrance, Virginie Hoel, S.L. Delage, M.A. Di Forte-Poisson, N. Sarazin, E. Morvan, M. Alomari, E. Kohn, A. Dussaigne, J.F. Carlin, C. Ostermaier, J. Kuzmik, D. Pogany

18th International Conference on Microwave, Radar and Wireless Communications, MIKON-2010, 2010, Vilnius, Lithuania. pp.324-327. ⟨hal-00800883⟩

• Article dans une revue

Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

S.R. Plissard, K.A. Dick, X. Wallart, P. Caroff

Applied Physics Letters, 2010, 96, pp.121901-1-3. ⟨10.1063/1.3367746⟩. ⟨hal-00548716⟩

• Article dans une revue

Graphene growth by molecular beam epitaxy on the carbon-face of SiC

E. Moreau, S. Godey, F.J. Ferrer, D. Vignaud, X. Wallart, J. Avila, M.C. Asensio, F. Bournel, J.J. Gallet

Graphene layers have been grown by molecular beam epitaxy (MBE) on the (0001¯) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC…

Applied Physics Letters, 2010, 97 (24), pp.241907. ⟨10.1063/1.3526720⟩. ⟨hal-00548720⟩

• Article dans une revue

Ab initio calculation of the binding energy of impurities in semiconductors : application to Si nanowires

Y.M. Niquet, L. Genovese, C. Delerue, T. Deutsch

We discuss the binding energy Eb of impurities in semiconductors within density functional theory (DFT) and the GW approximation, focusing on donors in nanowires as an example. We show that DFT succeeds in the calculation of Eb from the Kohn-Sham (KS) hamiltonian of the ionized impurity, but fails…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81 (16), pp.161301(R). ⟨10.1103/PhysRevB.81.161301⟩. ⟨hal-00549021⟩

• Communication dans un congrès

Technological bricks and concepts for THz remote sensing

R. Czarny, L. Morvan, Guillaume Pillet, J. P. Schnell, P. Legagneux, S. Megtert, A. de Rossi, D. Dolfi, J. Torres, P. Nouvel, H. Marinchio, L. Varani, Laurent Chusseau, Jean-Francois Lampin, S. Bollaert, Yannick Roelens

IEEE Winter Topicals, 2010, Majorca, Spain. ⟨hal-01904171⟩

• Article dans une revue

Influence of the selectively implanted collector integration on 400 GHz fmax Si/SiGe:C HBTs

Thomas Lacave, Pascal Chevalier, Yves Campidelli, Linda Depoyan, Ludovic Berthier, Frédéric André, Michel Buczko, Gregory Avenier, Christophe Gaquière, Alain Chantre

Optimization of SiGe HBT performances towards very high cut-off frequencies fT and fMAX requires high collector doping level together with low collector/base junction capacitance CBC. This compromise is usually achieved by localizing a dedicated collector implant (so-called SIC implant) under the…

ECS Transactions, 2010, 33 (6), pp.331-335. ⟨10.1149/1.3487563⟩. ⟨hal-00550006⟩

• Communication dans un congrès

Power line communication and compromising radiated emission

Pierre Degauque, Pierre Laly, Virginie Degardin, M. Lienard

18th International Conference on Software, Telecommunications and Computer Networks, SoftCOM 2010, 2010, Croatia. pp.88-91. ⟨hal-00568957⟩

• Communication dans un congrès

Coating metallic foams and structured reactors by VOx/TiO2 oxidation catalyst : application of RPECVD

A. Essakhi, A. Lofberg, P. Supiot, B. Mutel, S. Paul, V. Le Courtois, E. Bordes-Richard

10th International Symposium on Scientific Bases for the Preparation of Heterogeneous Catalysts, 2010, Belgium. pp.17-24, ⟨10.1016/S0167-2991(10)75003-5⟩. ⟨hal-00568965⟩

• Communication dans un congrès

Contour-mode ZnO piezoelectric MEMS resonator

Tadeusz Gryba, Julien Carlier, X.Z. Zhao, S.S. Guo, S.X. Wang, Jean-Etienne Lefebvre

3rd International Conference on Advanced Manufacture, ICAM 2010, 2010, ", Taiwan. CDROM, session 4B, paper 012, 1-6. ⟨hal-00568980⟩