Publications

• Communication dans un congrès

Les actionneurs piézo-électriques pour le contrôle dynamique de vibration

S. Tliba, M. Pham-Thi, Anne-Christine Hladky, B. Bonomi

2006, pp.673-676. ⟨hal-00140160⟩

• Communication dans un congrès

Influence des conditions climatiques sur les capteurs textiles à base de matériau conducteur nano composite

C. Cochrane, V. Koncar, M. H. Lewandowski, J. Belloncle, C. Dufour

Matériaux 2006, 2006, Dijon, France. ⟨hal-00243999⟩

• Communication dans un congrès

MEMS electromechanical resonators for RF applications

F. Casset, C. Durand, N. Abele, K. Segueni, L. Buchaillot, A.M. Ionescu, P. Ancey

16ème Forum de l'Interconnexion et du Packaging Microélectronique, INTERCONEX 2006, 2006, Besançon, France. ⟨hal-00244017⟩

• Communication dans un congrès

Specific nearby electronic scheme for multiplexed excitation and detection of piezoelectric silicon-based micromembranes resonant frequencies using FPGA technology

Denis Lagrange, Cédric Ayela, Liviu Nicu, Eric Cattan, Caroline Soyer

5th IEEE Conference on Sensors, IEEE Sensors 2006, 2006, South Korea. pp.45-49, ⟨10.1109/ICSENS.2007.355714⟩. ⟨hal-00244027⟩

• Article dans une revue

TEM study of PtSi contacts layers for low Schottky barrier MOSFETs

A. Laszcz, J. Katcki, J. Ratajczak, A. Czerwinski, N. Breil, G. Larrieu, Emmanuel Dubois

We report investigations of the silicide formation process in the Pt/Si structure of low Schottky barrier MOSFETs on SOI. The silicide layers are used there as source and drain contacts and the high quality of the silicide/Si interface and the silicide structure are essential for the electrical…

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.274-277. ⟨10.1016/j.nimb.2006.10.033⟩. ⟨hal-00138656⟩

• Communication dans un congrès

New receiver architecture for localisation system

V.Y. Vu, A. Benlarbi-Delaï

International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2006, 2006, Japan. pp.879-882, ⟨10.1109/ISPACS.2006.364782⟩. ⟨hal-00241357⟩

• Communication dans un congrès

Ultra wide band dielectric spectroscopy of single cell in microfluidic devices

Vincent Senez, A. Treizebre, Erwan Lennon, Hind Ghandour, Vianney Mille, Thomas Heim, Tahsin Akalin, Takahisa Yamamoto, Nour Eddine Bourzgui, Dominique Legrand, Yasuyuki Sakai, Philippe Supiot, Joël Mazurier, Teruo Fujii, Bertrand Bocquet

10th International Conference on Miniaturized Systems for Chemistry and Life Sciences (uTAS2006), Nov 2006, Tokyo, Japan. pp.738-740. ⟨hal-00130877⟩

• Article dans une revue

TEM characterisation of the erbium silicide formation process using a Pt/Er stack on the silicon-on-insulator substrate

A. Łaszcz, J. Katcki, J. Ratajczak, Xing Tang, Emmanuel Dubois

Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the metal and silicon during annealing. The influence of annealing temperature (…

Journal of Microscopy, 2006, 224 (1), pp.38-41. ⟨10.1111/j.1365-2818.2006.01653.x⟩. ⟨hal-00138660⟩

• Article dans une revue

Interfaces between gamma-Al2O3 and silicon

Pierre Boulenc, Isabelle Devos

As the epitaxy of crystalline LaAlO3 has not been realized yet, we investigated the use of a g-Al2O3 buffer layer between the high-k and the substrate. We firstly studied the structural matching of g-Al2O3(0 0 1) with a Si(0 0 1)-pð2 1Þ reconstructed surface. According to experimental data and…

Materials Science in Semiconductor Processing, 2006, 9 (6), pp.949-953. ⟨10.1016/j.mssp.2006.10.043⟩. ⟨hal-00152970⟩

• Communication dans un congrès

UWB-IR transceiver for millimeter wave WLAN

N. Deparis, A. Boé, Christophe Loyez, N. Rolland, P.A. Rolland

2006, pp.4785-4789. ⟨hal-00152957⟩