Publications

• Communication dans un congrès

Design of a distributed oscillator in 130 nm SOI MOS technology

M. Si Moussa, C. Pavageau, L. Picheta, Francois Danneville, J. Russat, N. Fel, J.P. Raskin, D. Vanhoenacker-Janvier

2006, 4 pp. ⟨hal-00147510⟩

• Communication dans un congrès

A fully InP monolithic integrated millimeter-wave reflectometer

Kamel Haddadi, H. El Aabbaoui, B. Gorisse, D. Glay, N. Rolland, T. Lasri

2006, pp.703-706. ⟨hal-00147515⟩

• Article dans une revue

Study of the effects of signal filtering on acousto-optic correlator performance

O. Bazzi, Marc G. Gazalet, Y. Mohanna, A. Alaeddine, A. Hafiz

Optical Engineering, 2006, 45, pp.128201-1-7. ⟨hal-00147741⟩

• Communication dans un congrès

Evaluation of a tunnel ground to train UWB communication

H. Saghir, M. Heddebaut, F. Elbahhar, Jean-Michel Rouvaen

2006, pp.1-5. ⟨hal-00147735⟩

• Chapitre d'ouvrage

Rythmes de la sédimentation et interprétations paléoclimatiques lors du Postglaciaire dans les Alpes du Sud C et dendro-géomorphologie, deux chronomètres complémentaires

Olivier Sivan, Corinne Miramond, Jean-Louis Édouard

L'Erosion entre société, Climat et Paléoenvironnement., Presses universitaires Blaise-Pascal, s.p., 2006. ⟨halshs-00321976⟩

• Article dans une revue

Interfaces between gamma-Al2O3 and silicon

Pierre Boulenc, Isabelle Devos

As the epitaxy of crystalline LaAlO3 has not been realized yet, we investigated the use of a g-Al2O3 buffer layer between the high-k and the substrate. We firstly studied the structural matching of g-Al2O3(0 0 1) with a Si(0 0 1)-pð2 1Þ reconstructed surface. According to experimental data and…

Materials Science in Semiconductor Processing, 2006, 9 (6), pp.949-953. ⟨10.1016/j.mssp.2006.10.043⟩. ⟨hal-00152970⟩

• Article dans une revue

Spectral characterisation of monolithic modelocked lasers for mm-wave generation and signal processing

P. Acedo, H. Lamela, S. Garidel, C. Roda, Jean-Pierre Vilcot, G. Carpintero, I.H. White, K.A. Williams, M. Thompson, W. Li, M. Pessa, M. Dumitrescu, S. Hansmann

Electronics Letters, 2006, 42, pp.928-929. ⟨hal-00154943⟩

• Article dans une revue

TEM characterisation of the erbium silicide formation process using a Pt/Er stack on the silicon-on-insulator substrate

A. Łaszcz, J. Katcki, J. Ratajczak, Xing Tang, Emmanuel Dubois

Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the metal and silicon during annealing. The influence of annealing temperature (…

Journal of Microscopy, 2006, 224 (1), pp.38-41. ⟨10.1111/j.1365-2818.2006.01653.x⟩. ⟨hal-00138660⟩

• Article dans une revue

Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy

D. Vignaud, M. Zaknoune, F. Mollot

Journal of Crystal Growth, 2006, 291, pp.107-111. ⟨hal-00127061⟩

• Article dans une revue

Réfracter la lumière à l'envers

D. Lippens

Pour la science, 2006, 345, pp.68-74. ⟨hal-00127068⟩