Publications

• Communication dans un congrès

Fonctionnement de la photodiode à transport unipolaire et transition large bande guide d'onde-microruban dans la bande W

F. Pavanello

14èmes Journées Nationales du Réseau Doctoral de Micro et Nanoélectronique, JNRDM 2011, 2011, Cachan, France. pp.1-4. ⟨hal-00806720⟩

• Article dans une revue

Microwave properties of Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3 hetero layered films directly sputtered on Si up to 50 GHz

L.H. Yang, G.S. Wang, X.L. Dong, Freddy Ponchel, Denis Remiens

Journal of the American Ceramic Society, 2011, 94, pp.2262-2265. ⟨10.1111/j.1551-2916.2011.04610.x⟩. ⟨hal-00639934⟩

• Article dans une revue

Digital image correlation of metal nanofilms on SU-8 for flexible electronics and MEMS

Thierry Roland, S. Arscott, Laurent Sabatier, Lionel Buchaillot, Eric Charkaluk

This paper presents strain measurements using digital image correlation of common microelectronic metal nanofilms deposited onto a polymer substrate (SU-8), which has applications in flexible electronics and nano/microsystems reliability analysis. The novel experimental method is based on digital…

Journal of Micromechanics and Microengineering, 2011, 21 (12), pp.125005. ⟨10.1088/0960-1317/21/12/125005⟩. ⟨hal-00740993⟩

• Article dans une revue

Epitaxial GaAs for X-ray imaging

G. C. Sun, R. Rao, S. Makham, J. C. Bourgoin, X. Y. Zhang, R. Gohier, F. Masiello, J. Haertwig, J. Baruchel, C. Ponchut, Andrea Balocchi, Xavier Marie, O. Gilard, Isabelle Roch-Jeune, J. C. Pesant

To be used for X-ray imaging, semiconductor materials must exhibit good and uniform electronic properties. Epitaxial layers are therefore better adapted than bulk materials which contain dislocations, precipitates and point defects in variable concentrations depending on the growth mode and the…

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 633 (1), pp.S65-S68. ⟨10.1016/j.nima.2010.06.123⟩. ⟨hal-01233828⟩

• Communication dans un congrès

Phoxonic Crystals : A review

Sarah Benchabane, Said Sadat-Saleh, Maria-Pilar Bernal, Jean-Charles Beugnot, Vincent Laude, Yan Pennec, Bahram Djafari-Rouhani, Nikos Papanikolaou, Alejandro Martinez

Periodically structured materials exhibiting simultaneous photonic and phononic band gaps offer unprecedented ways to tailor photon-phonon interactions. A review of the works reported on these materials, sometimes termed "phoxonic crystals", is presented before highlighting theoretical…

Phononics 2011, May 2011, Sante Fe, United States. pp.84. ⟨hal-00639453⟩

• Article dans une revue

Tunability of aluminum nitride acoustic resonators: a phenomenological approach

Emmanuel Defay, Nizar Ben Hassine, Patrick Emery, Guy Parat, Julie Abergel, Arnaud Devos

A phenomenological approach is developed to identify the physical parameters causing the dc-voltage-induced tunability of aluminum nitride (AlN) acoustic resonators, widely used for RF filters. The typical resonance frequency of these resonators varies from 2.038 GHz at -200 V to 2.062 GHz at +200…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2011, 58, pp.2516-2520. ⟨10.1109/TUFFC.2011.2114⟩. ⟨hal-00783414⟩

• Article dans une revue

Complex permittivity determination with the transmission/reflection method

N. Jebbor, S. Bri, A. Nakheli, L. Bejjit, M. Haddad, A. Mamouni

International Journal of Emerging Sciences, 2011, 1, pp.682-695. ⟨hal-00783490⟩

• Article dans une revue

Band structures tunability of bulk 2D phononic crystals made of magneto-elastic materials

Jerome O. Vasseur, Olivier Bou Matar, J.F. Robillard, Anne-Christine Hladky, P.A. Deymier

AIP Advances, 2011, 1, pp.041904-1-12. ⟨10.1063/1.3676172⟩. ⟨hal-00783382⟩

• Article dans une revue

Atomic scale investigation of silicon nanowires and nanoclusters

Manuel Roussel, W.H. Chen, Etienne Talbot, Rodrigue Lardé, E. Cadel, F. Gourbilleau, B. Grandidier, D. Stievenard, Philippe Pareige

In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and…

Nanoscale Research Letters, 2011, 6, pp.271-1-6. ⟨10.1186/1556-276X-6-271⟩. ⟨hal-00597078⟩

• Article dans une revue

CMOS integration using low thermal budget dopant-segregated metallic S/D junctions on thin-body SOI

G. Larrieu, Emmanuel Dubois, D. Ducatteau

ECS Transactions, 2011, 41, pp.275-282. ⟨10.1149/1.3633307⟩. ⟨hal-00795902⟩