Publications

• Article dans une revue

An overview of 60 GHz location systems operating in multipath environments

Michael Bocquet, Christophe Loyez, N. Rolland

International Journal of Microwave and Wireless Technologies, 2011, 3, pp.223-230. ⟨10.1017/S1759078711000365⟩. ⟨hal-00597098⟩

• Article dans une revue

Chemical functionalization of electrodes for detection of gaseous nerve agents with carbon nanotube field-effect transistors

M. Delalande, S. Clavaguera, M. Toure, A. Carella, S. Lenfant, D. Deresmes, D. Vuillaume, J.P. Simonato

Chemical Communications, 2011, 47, pp.6048-6050. ⟨10.1039/C1CC11517K⟩. ⟨hal-00597074⟩

• Article dans une revue

Compromising radiated emission from a power line communication cable

Virginie Degardin, Pierre Laly, M. Lienard, Pierre Degauque

Journal of Communications Software and Systems, 2011, 7, pp.16-21. ⟨hal-00597099⟩

• Communication dans un congrès

Antennes accordables en fréquence dans la bande des 60 GHz sur substrat élastomère ultrasouple

S. Hage-Ali, Nicolas Tiercelin, Philippe Coquet, Yannick Dusch, Ronan Sauleau, Vladimir Preobrazhensky, Philippe Pernod

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. pp.3C4, 1-4. ⟨hal-00597151⟩

• Article dans une revue

Controlling the transmission of ultrahigh frequency bulk acoustic waves in silicon by 45° mirrors

S. Wang, J. Gao, Julien Carlier, Pierre Campistron, Assane Ndieguene, S. Guo, Olivier Bou Matar, Dorothée Debavelaere-Callens, Bertrand Nongaillard

In this paper, we present a feasible microsystem in which the direction of localized ultrahigh frequency (∼1 GHz) bulk acoustic wave can be controlled in a silicon wafer. Deep etching technology on the silicon wafer makes it possible to achieve high aspect ratio etching patterns which can be used…

Ultrasonics, 2011, 51, pp.532-538. ⟨10.1016/j.ultras.2011.01.003⟩. ⟨hal-00574498⟩

• Article dans une revue

AlN/GaN heterostructures grown by metal organic vapour phase epitaxy with in situ Si3N4 passivation

K. Cheng, S. Degroote, M. Leys, F Medjdoub, J. Derluyn, B. Sijmus, Marie Germain, G. Borghs

Journal of Crystal Growth, 2011, 315, pp.204-207. ⟨10.1016/j.jcrysgro.2010.09.025⟩. ⟨hal-00572672⟩

• Article dans une revue

The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT's on SiC substrates

M. Gassoumi, M.M. Ben Salem, S. Saadaoui, B. Grimbert, Julien Fontaine, Christophe Gaquière, H. Maaref

Microelectronic Engineering, 2011, 88, pp.370-372. ⟨10.1016/j.mee.2010.09.027⟩. ⟨hal-00572669⟩

• Communication dans un congrès

Spurious emissions reduction using multirate RF transmitter

A. Werquin, A. Frappe, A. Kaiser

IEEE International Symposium on Circuits and Systems, ISCAS 2011, 2011, Rio de Janeiro, Brazil. pp.965-968, ⟨10.1109/ISCAS.2011.5937728⟩. ⟨hal-00800022⟩

• Communication dans un congrès

10-MHz DC/DC converter based on GaN HEMT for RF applications

F. Gamand, V. Di Giacomo, Christophe Gaquière

33rd International Telecommunications Energy Conference, INTELEC 2011, 2011, Amsterdam, Netherlands. pp.1-4, ⟨10.1109/INTLEC.2011.6099887⟩. ⟨hal-00800105⟩

• Communication dans un congrès

Ionization effect on SiGe HBT power limitation in the millimeter wave frequency range

A. Pottrain, T. Lacave, D. Gloria, P. Chevalier, F. Purchon, N. Derrier, Christophe Gaquière

6th European Microwave Integrated Circuits Conference, EuMIC 2011, 2011, Manchester, United Kingdom. pp.212-215. ⟨hal-00800126⟩