Publications

Affichage de 41 à 50 sur 16563


  • Article dans une revue

Pulsed Laser Deposition of Piezoelectric Ba0.85Ca0.15Ti0.9Zr0.1O3 Thin Films on Various Electrode/Substrate Combinations

Marie-Hélène Chambrier, Moustapha Azankoud, Donovan Ledru, Renaud Valois, Guillaume Demily, Freddy Ponchel, Denis Rémiens, Ilham Hamdi Alaoui, Françoise Le Marrec, Abdelilah Lahmar, Nathalie Lemée, Anthony Ferri, Antonio Da Costa, Rachel Desfeux

Ba0.85Ca0.15Ti0.9Zr0.1O3 (BCTZ) lead-free thin films (400 nm thick) with a tetragonal structure were grown by pulsed laser deposition on various bottom electrode/substrate sets. High-resolution X-ray diffraction confirmed heteroepitaxial growth of BCTZ on (001)-oriented SrTiO3 substrates; in…

ACS Applied Electronic Materials, 2026, ⟨10.1021/acsaelm.6c01288⟩. ⟨hal-05845422⟩

  • Article dans une revue

Time‐Modulated Optomechanics Reveal Energy Flow and Inelastic Interactions Between Acoustic Phonons in Nanomembranes

Anuj Kumar Dhiman, Piotr Graczyk, Tobias Held, Mikolaj Pochylski, Kleoniki Sympoura, Rafal Bialek, Jacek Gapinski, Bahram Djafari-Rouhani, Baerbel Rethfeld, Bartlomiej Graczykowski, Thomas Vasileiadis

<div><p>An abrupt change in refractive index, known as a temporal interface, can cause temporal reflection, refraction, and diffraction of light, enabling the development of time-varying photonic devices. Since time-varying optics are based on ultrafast electronic excitations, the…

Laser and Photonics Reviews, 2026, 15 p. ⟨10.1002/lpor.72069⟩. ⟨hal-05834933⟩

  • Pré-publication, Document de travail

Competing regimes of charge-carrier and impurity scattering limiting phonon heat conduction in heavily-doped silicon

Raja Sen, Juan Carlos Acosta Abanto, Mélanie Brouillard, Séverine Gomès, Jean-François Robillard, Alessandro Ciavatta, Lorenzo Paulatto, Nathalie Vast, Jérôme Saint-Martin, Jelena Sjakste, Pierre-Olivier Chapuis

With respect to undoped semiconductors, thermal transport by phonons is limited by two additional mechanisms when doping increases: charge-carrier and impurity scattering. Previous works provided contradicting conclusions on the dominant doping-induced scattering mechanism in silicon. In this work,…

2026. ⟨hal-05451267v2⟩