Publications

• Article dans une revue

Millimeter-wave in situ tuner : an efficient solution to extract the noise parameters of SiGe HBTs in the whole 130-170 GHz range

Marina Deng, Laurent Poulain, Daniel Gloria, Thomas Quémerais, Pascal Chevalier, Sylvie Lepilliet, Francois Danneville, Gilles Dambrine

SiGe HBT noise parameters ( , and ) are for the first time extracted in the entire 130 - 170 GHz frequency range. This achievement is realized using a D-band on-chip source-pull system, which includes an impedance tuner integrated with the transistor under test. On-wafer noise power measurements on…

IEEE Microwave and Wireless Components Letters, 2014, 24, pp.649-651. ⟨10.1109/LMWC.2014.2331762⟩. ⟨hal-01059836⟩

• Article dans une revue

Joint estimation of state and noise parameters in a linear dynamic system with impulsive measurement noise: Application to OFDM systems

Nouha Jaoua, Emmanuel Duflos, Philippe Vanheeghe, Laurent Clavier, François Septier

Interference mitigation is one of the main challenges in wireless communication, especially in ad hoc networks. In such context, the Multiple Access Interference (MAI) is known to be of an impulsive nature. Therefore, the conventional Gaussian assumption is inadequate to model this type of…

Digital Signal Processing, 2014, 35, pp.1-16. ⟨10.1016/j.dsp.2014.08.001⟩. ⟨hal-01064657⟩

• Article dans une revue

Electro-optic and converse-piezoelectric properties of epitaxial GaN grown on silicon by metal-organic chemical vapor deposition

Mireille Cuniot-Ponsard, Irma Saraswati, S.M. Ko, Mathieu Halbwax, Y.H. Cho, El Hadj Dogheche

We report the measurement of the (r13, r33) Pockels electro-optic coefficients in a GaN thin film grown on a Si(111) substrate. The converse piezoelectric (d33) and electro-absorptive coefficients are simultaneously determined. Single crystalline GaN epitaxial layers were grown with a AlGaN buffer…

Applied Physics Letters, 2014, 104, 101908, 4 p. ⟨10.1063/1.4868427⟩. ⟨hal-00964286⟩

• Article dans une revue

Sub-THz characterisation of multi-walled carbon nanotube thin films using vector network analyser

S. Puthukodan, E. Dadrasnia, V.K.T. Vinod, H.K. Nguendon, H. Lamela, Guillaume Ducournau, Jean-Francois Lampin, F. Garet, J.L. Coutaz, D.M. Lee, S. Baik

A vector network analyser is used to study the electrical properties of multi-walled carbon nanotube (MWCNT) thin films deposited on a fused quartz substrate in the sub-terahertz (THz) frequency ranges of 220-325 GHz (WR3.4) and 325-500 GHz (WR2.2). The experiment is performed in free space. The…

Electronics Letters, 2014, 50, pp.297-299. ⟨10.1049/el.2013.4136⟩. ⟨hal-00954474⟩

• Communication dans un congrès

Effects of deposition parameters on the composition of Cu(In,Ga)Se2 thin films deposited by magnetron pulse DC sputtering from a single quaternary target

Thomas Aviles, Jean-Pierre Vilcot

5th Photovoltaic Technical Conference 'Thin Film and Advanced Silicon Solutions', PVTC 2014, 2014, Aix-en-Provence, France. ⟨hal-00989529⟩

• Article dans une revue

On the equivalence of thermodynamics ensembles for flexible polymer chains

F. Manca, Stefano Giordano, Pier Luca Palla, F. Cleri

Physica A: Statistical Mechanics and its Applications, 2014, 395, pp.154-170. ⟨10.1016/j.physa.2013.10.042⟩. ⟨hal-00913580⟩

• Communication dans un congrès

Interfacial strength of InP/Si substructure

Éric Le Bourhis, Konstantinos Pantzas, Gilles Patriarche, Isabelle Sagnes, David Troadec, Anne Talneau

16th International Conference on Experimental Mechanics, ICEM16, 2014, Cambridge, United Kingdom. 2 p. ⟨hal-00992686⟩

• Communication dans un congrès

Influence of an interfacial AlxIn1-xSb layer on the strain relaxation and surface morphology of thin GaSb layers epitaxially grown on GaAs(001)

Mathieu Danoy, Pierre-François Angry, Julien Gavrel, Charlène Brillard, L. Desplanque, Y. Wang, P. Ruterana, Xavier Wallart

This work focuses on the strain relaxation and surface morphology of 10 ML thick GaSb layers on GaAs. It is shown that full relaxation is never reached for this thickness. The use of an AlSb interfacial layer only slightly improves strain relaxation but greatly reduces surface roughness. Finally,…

26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Compound Semiconductor Week, CSW 2014, 2014, Montpellier, France. ⟨hal-00992670⟩

• Communication dans un congrès

Modeling and evaluation of power transmission of flapping wing nano air vehicle

Alexandre Bontemps, Sébastien Grondel, Thomas Vanneste, Samuel Dupont, Eric Cattan

In the last decade researchers pursued the development of tiny flying robots inspired by natural flyers. Within this context our main objective is to devise a flying robot-mimicking insect in terms of kinematics and scale using MEMS technologies. For this purpose, an original design has been…

IEEE/ASME 10th International Conference on Mechatronic and Embedded Systems and Applications (MESA), Sep 2014, Senigallia, Italy. pp.1-6, ⟨10.1109/MESA.2014.6935524⟩. ⟨hal-03280242⟩

• Article dans une revue

Temperature dependence of the conduction mechanisms through a Pb(Zr,Ti)O3 thin film

C. Jegou, L. Michalas, T. Maroutian, G. Agnus, M. Koutsoureli, G. Papaioannou, L. Largeau, David Troadec, A. Leuliet, P. Aubert, P. Lecoeur

The conduction mechanisms through a lead zirconate titanate (PZT) thin film grown by pulsed laser deposition with a La0.67Sr0.33MnO3 (LSMO) buffer layer on epitaxial Pt (111) were assessed in the 230-330 K temperature range. X-Ray diffraction and transmission electron microscopy evidenced a…

Thin Solid Films, 2014, 563, pp.32-35. ⟨10.1016/j.tsf.2013.12.043⟩. ⟨hal-01009981⟩