Publications

• Autre publication scientifique

Etude et réalisation de sources stables microondes à base de résonateur BAW pour micro-horloge atomique au césium

Mingdong Li

2011. ⟨hal-00579040⟩

• Communication dans un congrès

Interference modeling and relay selection issue for amplify-and-forward IR-UWB sensor networks

Jie Chen, Laurent Clavier, X. Yong, A. Burr, N. Rolland, P.A. Rolland

4th IFIP International Conference on New Technologies, Mobility and Security, NTMS 2011, 2011, France. pp.1-5, ⟨10.1109/NTMS.2011.5721051⟩. ⟨hal-00579047⟩

• Article dans une revue

Application of the finite differences method (FDTD) for the modeling of SAR in biological tissues

S. Kassimi, S. Bri, M. Habibi, A. Mamouni

Physical and Chemical News, 2011, 60, pp.31-40. ⟨hal-00783438⟩

• Communication dans un congrès

Study in the THz domain of metamaterials exhibiting a negative refractive index

F. Garet, J.L. Coutaz, S. Wang, Eric Lheurette, D. Lippens

6èmes Journées Terahertz, 2011, La Grande-Motte, France. ⟨hal-00807135⟩

• Article dans une revue

High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning

S.R. Plissard, G. Larrieu, X. Wallart, P. Caroff

Nanotechnology, 2011, 22, pp.275602-1-7. ⟨10.1088/0957-4484/22/27/275602⟩. ⟨hal-00597081⟩

• Article dans une revue

CMOS integration using low thermal budget dopant-segregated metallic S/D junctions on thin-body SOI

G. Larrieu, Emmanuel Dubois, D. Ducatteau

ECS Transactions, 2011, 41, pp.275-282. ⟨10.1149/1.3633307⟩. ⟨hal-00795902⟩

• Article dans une revue

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

Xiaohui Tang, Christophe Krzeminski, Aurelien Lecavelier Des Etangs-Levallois, Zhenkun Chen, Emmanuel Dubois, Erich Kasper, Alim Karmous, Nicolas Reckinger, Denis Flandre, Laurent A. Francis, Jean-Pierre Collinge, Jean-Pierre Raskin

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge…

Nano Letters, 2011, 11, pp.4520-4526. ⟨10.1021/nl202434k⟩. ⟨hal-00640212v2⟩

• Article dans une revue

Tunability of aluminum nitride acoustic resonators: a phenomenological approach

Emmanuel Defay, Nizar Ben Hassine, Patrick Emery, Guy Parat, Julie Abergel, Arnaud Devos

A phenomenological approach is developed to identify the physical parameters causing the dc-voltage-induced tunability of aluminum nitride (AlN) acoustic resonators, widely used for RF filters. The typical resonance frequency of these resonators varies from 2.038 GHz at -200 V to 2.062 GHz at +200…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2011, 58, pp.2516-2520. ⟨10.1109/TUFFC.2011.2114⟩. ⟨hal-00783414⟩

• Communication dans un congrès

120nm AlSb/InAs HEMTs

Yannick Roelens, A. Olivier, A. Noudeviwa, L. Desplanque, Francois Danneville, Nicolas Wichmann, X. Wallart, S. Bollaert

TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Tanger, Maroc. CDROM, session A1, papier 185, 1-4. ⟨hal-00591362⟩

• Communication dans un congrès

Growth of self-catalyzed GaAs nanowire arrays on Si(111) using a VLS mechanism

S.R. Plissard, G. Larrieu, K.A. Dick, X. Wallart, P. Caroff

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591395⟩