Publications

• Chapitre d'ouvrage

Electronic properties of organic monolayers and molecular devices

D. Vuillaume

Deleonibus S. Electronic device architectures for the NANO-CMOS era - From ultimate CMOS scaling to beyond CMOS devices, Pan Stanford Publishing, pp.299-331, 2008. ⟨hal-00362364⟩

• Autre publication scientifique

Elaboration et caractérisations de films ferroélectriques relaxeurs de PMN-PT : intégration sur silicium et applications MEMS

M. Detalle

2008. ⟨hal-00362347⟩

• Article dans une revue

Characterization of ultrathin SOI film and application to short channel MOSFETs

Xing Tang, N. Reckinger, G. Larrieu, Emmanuel Dubois, D. Flandre, J.P. Raskin, B. Nysten, A.M. Jonas, V. Bayot

In this study, a very dilute solution (NH4OH:H2O2:H2O 1:8:64 mixture) was employed to reduce the thickness of commercially available SOI wafers down to 3 nm. The etch rate is precisely controlled at 0.11 Å s−1 based on the self-limited etching speed of the solution. The thickness uniformity of the…

Nanotechnology, 2008, 19, pp.165703-1-7. ⟨10.1088/0957-4484/19/16/165703⟩. ⟨hal-00356972⟩

• Article dans une revue

Gold metallogeny in the Birimian craton of Burkina Faso.

Didier Béziat, M. Dubois, Pierre Debat, Serge Nikiéma, S. Salvi, Francis Tollon

Journal of African Earth Sciences, 2008, pp.215-233. ⟨hal-00326270⟩

• Article dans une revue

Characterization of nanogap chemical reactivity using peptide-capped gold nanoparticles and electrical detection

L. Marcon, D. Stievenard, O. Melnyk

Bioconjugate Chemistry, 2008, 19, pp.802-805. ⟨10.1021/bc8000084⟩. ⟨hal-00357336⟩

• Article dans une revue

Experimental and theoretical investigation of terahertz optical-beating detection by plasma waves in high electron mobility transistors

H. Marinchio, J. Torres, G. Sabatini, P. Nouvel, C. Palermo, Laurent Chusseau, L. Varani, F. Teppe, P. Shiktorov, E. Starikov, V. Gruzinskis, A. Shchepetov, S. Bollaert, Yannick Roelens

A photomixed laser beam of two 1.55 μm lasers is used to obtain interband photoexcitation at the difference frequency and at room temperature in suvmicron gate length INAIA/InGaAs transistors. Results show the clear excitation of plasma oscillation modes in the transistors channel Fundamental…

Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 5 (1), pp.257-260. ⟨10.1002/pssc.200776572⟩. ⟨hal-00327410⟩

• Article dans une revue

Multilevel modeling of the influence of surface transport peculiarities on growth, shaping, and doping of Si nanowires

A. Efremov, A. Klimovskaya, I. Prokopenko, Y. Moklyak, D. Hourlier

Physica E: Low-dimensional Systems and Nanostructures, 2008, 40, pp.2446-2453. ⟨10.1016/j.physe.2008.01.015⟩. ⟨hal-00356959⟩

• Article dans une revue

Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies

M. Mattalah, A. Telia, A. Soltani, Jean-Claude de Jaeger, P. Thevenin, A. Bath, B. Akkal, H. Abid

Thin Solid Films, 2008, 516, pp.4122-4127. ⟨10.1016/j.tsf.2007.10.009⟩. ⟨hal-00357796⟩

• Article dans une revue

Structural and electrical properties of Au and Ti/Au contacts to n-type GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, B. Beaumont, Z. Bougrioua

Vacuum, 2008, 82, pp.794-798. ⟨10.1016/j.vacuum.2007.11.005⟩. ⟨hal-00356985⟩

• Article dans une revue

Chemical and physical characterization of LaNiO3 thin films deposited by sputtering for top and bottom electrodes in ferroelectric structure

M. Detalle, Denis Remiens

Journal of Crystal Growth, 2008, 310, pp.3596-3603. ⟨10.1016/j.jcrysgro.2008.04.053⟩. ⟨hal-00360097⟩