Publications

• Article dans une revue

Ferroelectric active sensors

L. Cima, Denis Remiens

Sensors and Actuators A: Physical , 2005, 119, pp.120-127. ⟨hal-00138417⟩

• Article dans une revue

Terahertz radiation from heavy-ion-irradiated In$_{0.53}Ga_{0.47}$As photoconductive antenna excited at 1.55 $\mu$m

N. Chimot, J. Mangeney, L. Joulaud, P. Crozat, H. Bernas, K. Blary, J. F. Lampin

We investigate terahertz (THz) emission from heavy-ion-irradiated In0.53Ga0.47As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In0.53Ga0.47As layer is less than 200 fs, the steady-state mobility is 490 cm2 V–1 s–1, and the dark resistivity is 3 Omega cm…

Applied Physics Letters, 2005, 87, pp.193510. ⟨10.1063/1.2126110⟩. ⟨in2p3-00025172⟩

• Communication dans un congrès

Nonlinear acoustics of phase conjugate ultrasound beams

Vladimir Preobrazhensky, Philippe Pernod, Fedor V. Bunkin, Andrey Brysev, Leonid Krutyansky, Yury Pyl'Nov, S. Preobrazhensky

Overview of nonlinear acoustics of phase conjugate waves (PCW) - the new domain of physical acoustics created by the participants of the Joint Russian-French laboratory LEMAC is presented. The original magneto-acoustic technique of supercritical parametricwave phase conjugation (WPC) is used as a…

Ten years of russian-french collaboration, Joint Workshop of Russian Acoustical Society (RAS) and French Acoustical Society (SFA) as part of XVI Meeting of Russian Acoustical Society, Nov 2005, Moscow, Russia. ⟨hal-00137666⟩

• Article dans une revue

Optical modulation line for stereoscopic laser display

Jean-Claude Kastelik, Michel Pommeray, M. Slachciak, Marc G. Gazalet

Review of Scientific Instruments, 2005, 76, pp.055106-1-5. ⟨hal-00137670⟩

• Communication dans un congrès

Realization of millimeter-wave planar antennas on PDMS

Nicolas Tiercelin, P. Coquet, R. Sauleau, V. Senez, H. Fujita

2005, pp.1994-1997. ⟨hal-00130851⟩

• Article dans une revue

Gel to glass transformation of methyltriethoxysilane : a silicon oxycarbide glass precursor investigated using vibrational spectroscopy

A. Desmartin-Chomel, P. Dempsey, J. Latournerie, D. Bahloul-Hourlier, U. Jayasooriya

Chemistry of Materials, 2005, 17, pp.4468-4473. ⟨10.1021/cm050501p⟩. ⟨hal-00247491⟩

• Article dans une revue

Study of structural and optical properties of InSb-doped SiO₂ thin films

B. Capoen, V.Q. Lam, S. Turrell, Jean-Pierre Vilcot, F. Beclin, Y. Jestin, M. Bouazaoui

The non-linear absorption and the structure of rf-cosputtered SiO2:InSb films were investigated after different heat-treatments at temperatures ranging from 200 to 900 °C. The heat-treatment was 1 min or 4 h in an atmosphere of nitrogen or under vacuum, respectively. After annealing at a…

• Article dans une revue

Left-handed electromagnetism via nanostructures materials : comparison to microstructured photonic crystals

M. Perrin, S. Fasquel, T. Decoopman, X. Melique, O. Vanbesien, Eric Lheurette, D. Lippens

In this work, we review some of the key issues for designing dielectric and metallic arrays in the diffraction or refraction regimes with main emphasis on left-handed electromagnetism. We first discuss dispersion characteristics of periodic dielectric arrays which are structured on the wavelength…

Journal of Optics A: Pure and Applied Optics, 2005, 7 (2), pp.S3-S11. ⟨10.1088/1464-4258/7/2/R01⟩. ⟨hal-00125346⟩

• Article dans une revue

Design of microstrip to waveguide transition in the W band suitable antenna or integrated circuits connections

B.D. Nguyen, Claire Migliaccio, Christian Pichot, N. Rolland

This paper presents a millimeter waveguide-to-microstrip line transition based on E-mode coupling. It uses a standard W-band waveguide and a microstrip line made on alumina substrate. It has been designed for the center frequency of 94 GHz. A back-to-back transition has been done and measured…

Microwave and Optical Technology Letters, 2005, 47, pp.518-520. ⟨hal-00154905⟩

• Autre publication scientifique

Etude de faisabilité de circuits pour systèmes de communication en bande millimétrique, en technologie BiCMOS SiGeC 0,13 µm

S. Pruvost

2005. ⟨hal-00126188⟩