Publications

• Article dans une revue

High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates

L. Desplanque, D. Vignaud, X. Wallart

Journal of Crystal Growth, 2007, 301-302, pp.194-198. ⟨10.1016/j.jcrysgro.2006.11.229⟩. ⟨hal-00285629⟩

• Article dans une revue

Design and performance of a low-frequency non intrusive acoustic technique for monitoring fouling in plate heat exchangers

B. Merheb, Georges Nassar, Bertrand Nongaillard, Guillaume Delaplace, J.C. Leuliet

The fouling of plate heat exchangers (PHE) is a serious problem in the food industry. Fouling reduces both PHE efficiency and food quality and can also give rise to microbiological problems. In order to monitor fouling inside PHE in real time, a new acoustic technique, using multiple optimized non-…

Journal of Food Engineering, 2007, 82 (4), pp.518-527. ⟨10.1016/j.jfoodeng.2007.03.022⟩. ⟨hal-00283955⟩

• Article dans une revue

Thin Pb(ZrxTi1-x)O3 (PZT) rhombohedral compositions deposited on the Si-substrate and its non-linear piezoelectric response

J. Nosek, M. Pokorny, M. Sulc, L. Burianova, Caroline Soyer, Denis Remiens

Ferroelectrics, 2007, 351, pp.112-121. ⟨10.1080/00150190701354075⟩. ⟨hal-00285655⟩

• Communication dans un congrès

Electronic transport through alkylthiol monolayers under mechanical stress measured by Conducting-AFM

S. Lenfant, D. Deresmes, D. Vuillaume

European Materials Research Society Spring Meeting, Symposium K : Nanoscale self-assembly and patterning, 2007, Strasbourg, France. ⟨hal-00285224⟩

• Communication dans un congrès

Caractérisation expérimentale de HEMTs de puissance destinée à la modélisation

N. Defrance, H. Gerard, Jean-Claude de Jaeger, B. Grimbert, Raphaël Aubry, Marie-Antoinette Di Forte-Poisson

15èmes Journées Nationales Microondes, JNM 2007, May 2007, Toulouse, France. pp.1D14-1-4. ⟨hal-00370330⟩

• Article dans une revue

Effect of growth temperature on defect states of GaNAsSb intrinsic layer in GaAs/GaNAsSb/GaAs photodiode for 1.3µm application

Satrio Wicaksono, Soon Fatt Yoon, Wan Khai Loke, Kianhuan Tan, Kim Luong Lew, Malek Zegaoui, Jean-Pierre Vilcot, Didier Decoster, Jean Chazelas

A GaAsSbN layer closely lattice matched to GaAs was used as an intrinsic layer (i layer) in a GaAsGaAsSbNGaAs p-i-n photodiode with response up to 1.3 μm. Deep level transient spectroscopy measurement on the GaAsGaAsSbNGaAs reveals two types of hole traps (HTs) in the GaAsSbN i layer; (i) HT1: a…

Journal of Applied Physics, 2007, 102 (4), pp.044505. ⟨10.1063/1.2769801⟩. ⟨hal-00283082⟩

• Article dans une revue

Low electron mobility of field-effect transistor determined by modulated magnetoresistance

R. Tauk, J. Lusakowski, W. Knap, A. Tiberj, Z. Bougrioua, M. Azize, P. Lorenzini, M. Sakowicz, K. Karpierz, C. Fenouillet-Beranger, M. Casse, C. Gallon, F. Boeuf, T. Skotnicki

Journal of Applied Physics, 2007, 102 (10), pp.103701.1. ⟨hal-00389540⟩

• Article dans une revue

Spatially resolved Raman spectroscopy of single- and few-layer graphene

D. Graf, F. Molitor, K. Ensslin, C. Stampfer, A. Jungen, C. Hierold, L. Wirtz

We present Raman spectroscopy measurements on single- and few-layer graphene flakes. Using a scanning confocal approach we collect spectral data with spatial resolution, which allows us to directly compare Raman images with scanning force micrographs. Single-layer graphene can be distinguished from…

Nano Letters, 2007, 7 (2), pp.238-242. ⟨10.1021/nl061702a⟩. ⟨hal-00283156⟩

• Article dans une revue

A switchable-order Gm–C baseband filter with wide digital tuning for configurable radio receivers

D. Chamla, A. Kaiser, A. Cathelin, D. Belot

IEEE Journal of Solid-State Circuits, 2007, 42, pp.1513-1521. ⟨10.1109/JSSC.2007.899125⟩. ⟨hal-00255852⟩

• Article dans une revue

Influence of the surface charge on the operation of ballistic T-branch junctions : a self-consistent model for Monte Carlo simulations

I. Iniguez de La Torre, J. Mateos, T. Gonzalez, D. Pardo, J.S. Galloo, S. Bollaert, Yannick Roelens, A. Cappy

Semiconductor Science and Technology, 2007, 22, pp.663-670. ⟨10.1088/0268-1242/22/6/014⟩. ⟨hal-00283039⟩