Publications

• Article dans une revue

[Invited paper] InSb nanowire field-effect transistors and quantum-dot devices

H.A. Nilsson, M.T. Deng, P. Caroff, C. Thelander, L. Samuelson, L.E. Wernersson, H.Q. Xu

The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO 2 -capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For…

IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17 (4), pp.907-914. ⟨10.1109/JSTQE.2010.2090135⟩. ⟨hal-00639823⟩

• Article dans une revue

Variations in the work function of doped single- and few-layer graphene assessed by Kelvin probe force microscopy and density functional theory

D. Ziegler, P. Gava, J. Güttinger, F. Molitor, L. Wirtz, M. Lazzeri, A.M. Saitta, A. Stemmer, Francesco Mauri, C. Stampfer

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.235434-1-7. ⟨10.1103/PhysRevB.83.235434⟩. ⟨hal-00639882⟩

• Article dans une revue

Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Nicolas Waldhoff, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

Microwave noise performance of state-of-the-art AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high-power millimeter-wave (mmW) applications. A maximum output current…

IEEE Electron Device Letters, 2011, 32 (9), pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩. ⟨hal-00639806⟩

• Article dans une revue

Conception of patch antenna at wide band

M. Iftissane, S. Bri, L. Zenkouar, A. Mamouni

International Journal of Emerging Sciences, 2011, 1, pp.400-417. ⟨hal-00639914⟩

• Communication dans un congrès

Imaging quantum Hall Coulomb islands inside a quantum ring

F. Martins, B. Hackens, S. Faniel, V. Bayot, M. Pala, H. Sellier, S. Huant, L. Desplanque, X. Wallart

American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States. ⟨hal-00579036⟩

• Article dans une revue

InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation

G. Moschetti, N. Wadefalk, P.A. Nilsson, Yannick Roelens, A. Noudeviwa, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, J. Grahn

Solid-State Electronics, 2011, 64, pp.47-53. ⟨10.1016/j.sse.2011.06.048⟩. ⟨hal-00639807⟩

• Article dans une revue

Effect of dimensional parameters on the current of MSM photodetector

Abdel-Djawad Boumediène Zebentout, Zouaoui Bensaad, Abdelkader Aissat, Didier Decoster

In this work, we present the influence of dimensional parameters on dark current and photocurrent of the metal–semiconductor–metal photodetector (MSM). MSM photodetectors of different sizes have been fabricated on GaAs (NID). The active area of MSM samples varies between 1×1 μm2 and 10×10 μm2 with…

Microelectronics Journal, 2011, 42, pp.1006-1009. ⟨10.1016/j.mejo.2011.05.002⟩. ⟨hal-00639881⟩

• Communication dans un congrès

Formation and evolution of exotic polarization textures in nanoferroelectrics

Laurent Baudry, Igor A. Luk'Yanchuk, Anaïs Sené

International Symposium on Integrated Functionalities, ISIF 2011, 2011, Cambridge, England, United Kingdom. ⟨hal-00807624⟩

• Communication dans un congrès

[Invited] On chiral skyrmions in ferroelectrics

Laurent Baudry, Igor A. Luk'Yanchuk, Anaïs Sené

12th European Meeting on Ferroelectricity, EMF 2011, 2011, Bordeaux, France. ⟨hal-00807619⟩

• Article dans une revue

Optimization of ohmic contact and adhesion on polysilicon in MEMS–NEMS wet etching process

Etienne Herth, Emmanuelle Algré, Bernard Legrand, Lionel Buchaillot

This paper presents the optimization of polysilicon doping and metallization to form ohmic contact with etching resistance. Indeed, polysilicon doped by ion implantation and ohmic contacts are an important and interesting part of integrated circuit technology or MEMS and NEMS. LPCVD-polysilicon…

Microelectronic Engineering, 2011, 88 (5), pp.724-728. ⟨10.1016/j.mee.2010.06.032⟩. ⟨hal-02300269⟩