Publications

• Article dans une revue

Self-assembled germanium quantum-dot supercrystals in silicon with extremely low thermal conductivities for thermoelectrics

J.N. Gillet, S. Volz

Journal of Electronic Materials, 2010, 39, pp.2154-2161. ⟨10.1007/s11664-009-0977-y⟩. ⟨hal-00549632⟩

• Article dans une revue

Four-port communication receiver with digital IQ-regeneration

Kamel Haddadi, M.M. Wang, Christophe Loyez, D. Glay, T. Lasri

IEEE Microwave and Wireless Components Letters, 2010, 20, pp.58-60. ⟨10.1109/LMWC.2009.2035969⟩. ⟨hal-00549489⟩

• Article dans une revue

Laser generated guided waves and finite element modeling for the thickness gauging of thin layers

F. Lefevre, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Review of Scientific Instruments, 2010, 81, pp.034901-1-5. ⟨10.1063/1.3317734⟩. ⟨hal-00549540⟩

• Article dans une revue

Crystal phase engineering in single InAs nanowires

K.A. Dick, C. Thelander, L. Samuelson, P. Caroff

Nano Letters, 2010, 10, pp.3494-3499. ⟨10.1021/nl101632a⟩. ⟨hal-00548711⟩

• Article dans une revue

Improvement of ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 Å heterojunction bipolar transistors

E. Mairiaux, L. Desplanque, X. Wallart, M. Zaknoune

Journal of Vacuum Science and Technology, 2010, 28, pp.17-20. ⟨10.1116/1.3268134⟩. ⟨hal-00548563⟩

• Article dans une revue

Sb-HEMT : toward 100-mV cryogenics electronics

A. Noudewiva, Yannick Roelens, Francois Danneville, A. Olivier, Nicolas Wichmann, N. Waldhoff, Sylvie Lepilliet, Gilles Dambrine, L. Desplanque, X. Wallart, G. Moschetti, J. Grahn, S. Bollaert

IEEE Transactions on Electron Devices, 2010, 57, pp.1903-1909. ⟨10.1109/TED.2010.2050109⟩. ⟨hal-00548570⟩

• Communication dans un congrès

RFID reader's synchronization to get a coordinated beam direction for warehouse application

C. Anssens, N. Rolland, P.A. Rolland

40th European Microwave Conference, EuMC 2010, 2010, France. pp.1102-1105. ⟨hal-00549941⟩

• Communication dans un congrès

AlGaN/GaN HEMT on Si (111) substrate for millimeter microwave power applications

S. Bouzid, Virginie Hoel, N. Defrance, H. Maher, F. Lecourt, M. Renvoise, D. Smith, Jean-Claude de Jaeger

8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.111-114, ⟨10.1109/ASDAM.2010.5666316⟩. ⟨hal-00549981⟩

• Article dans une revue

Molecular relaxation dynamics in organic monolayer junctions

S. Pleutin, N. Clement, David Guérin, D. Vuillaume

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.125436-1-13. ⟨10.1103/PhysRevB.82.125436⟩. ⟨hal-00548968⟩

• Article dans une revue

Imaging the operation of a carbon nanotube charge sensor at the nanoscale

David Brunel, Alexandre Mayer, Thierry Melin

Carbon nanotube field effect transistors (CNTFETs) are of great interest for nanoelectronics applications such as nonvolatile memory elements (NVMEs) or charge sensors. In this work, we use a scanning-probe approach based on a local charge perturbation of CNTFET-based NVMEs and investigate their…

ACS Nano, 2010, 4, pp.5978-5984. ⟨10.1021/nn1012435⟩. ⟨hal-00549080⟩